Preparation method of high-purity and high-density MoO2 lamellar nanometer structure
A nano-structured and lamellar technology, applied in the field of material preparation, can solve the problems of severe reaction, low yield, difficult control, etc., and achieve the effect of high density, smooth reaction and uniform shape
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[0027] MoO proposed by the present invention 2 A method for preparing a layered nanostructure, comprising the following steps and contents:
[0028] (1) The evaporation source used is commercially available analytically pure MoO 3 powder and S powder.
[0029] (2) In the double temperature zone vacuum tube furnace, MoO will be installed separately 3 Alumina ceramic crucibles of powder and S powder, or filled with MoO 3 The alumina ceramic crucible of powder and S mixed powder is placed in the central area of the furnace in the high-temperature heating zone, and the substrate is placed in the low-temperature heating zone 10-40cm downstream of the airflow.
[0030] (3) will be equipped with analytically pure MoO 3 When the alumina ceramic crucible of powder and S powder is placed in the central area of the furnace in the high temperature heating zone, it will be filled with MoO 3 The powdered alumina ceramic crucible is placed in the heating zone with the highest temper...
Embodiment 1
[0038] Example 1: In a double-temperature zone vacuum tube furnace, place an alumina ceramic crucible containing 0.5 g of analytically pure molybdenum trioxide powder in the high-temperature heating zone of the furnace, and place the crucible 3 cm away from the crucible containing molybdenum trioxide powder downstream of the air flow. There is an alumina ceramic crucible with 1g of analytically pure sulfur powder, and a silicon chip is placed at a distance of 15cm from the crucible with molybdenum oxide powder downstream of its airflow.
[0039] Before heating, use a vacuum pump to evacuate the entire system to below 0.05Pa, then feed 99.99vol.% argon into the system, and repeat 3 times to remove the air in the system. Then the high-temperature heating zone was heated to 950°C at a rate of 15°C / min, and the temperature of the low-temperature heating zone was raised to 450°C at a rate of 20°C / min, and kept for 2 hours. During the entire heating process, keep the carrier gas f...
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