Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing single-layer graphene

A single-layer graphene and graphite technology, applied in the field of preparation of single-layer graphene, can solve the problems of high time cost in the preparation process, unsuitable for industrial production, unfriendly environment, etc., to save time cost and production cost, and widely industrial applications Foreground, the effect of enhancing the oxidation effect

Active Publication Date: 2016-05-11
XI AN JIAOTONG UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two methods have high energy consumption, complicated process, unfriendly environment and high time and cost of preparation process, which are not suitable for industrial production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing single-layer graphene
  • Method for preparing single-layer graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0030] (1) Add mineral acid, sodium benzenesulfonate, and peroxybenzoic acid to graphite, and add KMnO after reacting for 1.5 hours at a reaction temperature of 20°C. 4 , stirred evenly and reacted for 4 hours at a reaction temperature of 62°C to obtain a brownish-yellow solution; wherein, the mass ratio of graphite, sodium benzenesulfonate, peroxybenzoic acid, and inorganic acid was 1:3:9:27; KMnO 4 The mass ratio to graphite is 8:1; among them, the inorganic acid is concentrated H with a mass fraction of 90% 2 SO 4 ;

[0031] (2) Add water to the brownish-yellow solution for dilution, then add H 2 o 2 until the solution is bright yellow, then filter, add the filter cake to ethanol and stir evenly, after filtering, wash the filter cake with hydrochloric acid with a mass fraction of 5%, and then wash it to neutrality to obtain graphite oxide;

[0032] (3) Add ethylenediamine to the graphite oxide, so that the graphite oxide is evenly dispersed in the ethylenediamine, then ...

Embodiment 3

[0034] (1) Add mineral acid, sodium benzenesulfonate, and peroxybenzoic acid to graphite, and add KMnO after reacting for 2.5 hours at a reaction temperature of 30°C. 4 , stirred evenly and reacted for 3 hours at a reaction temperature of 65°C to obtain a brownish-yellow solution; wherein, the mass ratio of graphite, sodium benzenesulfonate, peroxybenzoic acid, and inorganic acid was 1:5:6:28; KMnO 4 The mass ratio to graphite is 10:1; wherein, the inorganic acid is concentrated nitric acid with a mass fraction of 80%;

[0035] (2) Add water to the brownish-yellow solution for dilution, then add H 2 o 2 until the solution is bright yellow, then filter, add the filter cake to ethanol and stir evenly, after filtering, wash the filter cake with hydrochloric acid with a mass fraction of 5%, and then wash it to neutrality to obtain graphite oxide;

[0036] (3) Add ethylenediamine to the graphite oxide, so that the graphite oxide is evenly dispersed in the ethylenediamine, then re...

Embodiment 4

[0038] (1) Add mineral acid, sodium benzenesulfonate, and peroxybenzoic acid to graphite, and add KMnO after reacting for 3 hours at a reaction temperature of 25°C. 4 , after stirring evenly, react at a reaction temperature of 60°C for 5 hours to obtain a brown-yellow solution; wherein, the mass ratio of graphite, sodium benzenesulfonate, peroxybenzoic acid, and inorganic acid is 1:4:8:30; KMnO 4The mass ratio to graphite is 9:1; among them, the inorganic acid is concentrated H with a mass fraction of 90% 2 SO 4 ;

[0039] (2) Add water to the brownish-yellow solution for dilution, then add H 2 o 2 until the solution is bright yellow, then filter, add the filter cake to ethanol and stir evenly, after filtering, wash the filter cake with hydrochloric acid with a mass fraction of 5%, and then wash it to neutrality to obtain graphite oxide;

[0040] (3) Add ethylenediamine to the graphite oxide, so that the graphite oxide is uniformly dispersed in the ethylenediamine, then re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electron mobilityaaaaaaaaaa
quality scoreaaaaaaaaaa
quality scoreaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing single-layer graphene. The method includes the steps that mineral acid, benzene sulfonic acid sodium salt and peroxybenzoic acid are added to graphite, a reaction is conducted at the reaction temperature of 20-30 DEG C, then KMnO4 is added, after the mixture is stirred to be uniform, a reaction is conducted at the reaction temperature of 60-65 DEG C, and a claybank solution is obtained; water is added to the claybank solution to conduct dilution, then H2O2 is added till the solution becomes luminous yellow, then filtering is conducted, ethyl alcohol is added to filtrate, the mixture is stirred to be uniform, after filtering is conducted, a filter cake is subjected to acid pickling and then subjected to water washing till the filter cake is neutral, and graphite oxide is obtained; ethidene diamine is added to the graphite oxide, and after a reaction is conducted in an ultrasonic reactor, the single-layer graphene is obtained. The graphene obtained through the method is small in number of layers and not prone to agglomeration, and the problems that the single-layer graphene is stacked again under a natural state, and the surface of the single-layer graphene absorbs oxygen are solved. The one-step stripping and reducing method for preparing the graphene is environmentally friendly and simple, time cost and production cost are saved, large-scale production and application can be achieved, and the method has a wide industrial application prospect.

Description

technical field [0001] The invention belongs to the field of graphene preparation, in particular to a method for preparing single-layer graphene. Background technique [0002] Graphene is composed of a dense layer of carbon atoms wrapped in a honeycomb crystal lattice. It is the thinnest two-dimensional material in the world and has excellent performance: super large specific surface area, the theoretical value is 2630m 2 / g; high strength, the highest strength among the tested materials, up to 1TPa, more than 100 times that of steel; excellent electrical properties, electron mobility at room temperature can reach 2×10 5 cm 2 / (V s); The thermal conductivity is 5300W m -1 ·K -1 , is three times that of diamond, and also has special properties such as room temperature quantum Hall effect, ferromagnetism and superconducting effect in terms of electromagnetism. These excellent properties make graphene have good application prospects in the fields of transistors, solar cells...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
CPCC01P2004/03C01P2004/04
Inventor 李明江
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com