Method for regulating and controlling threshold voltage of semiconductor nanowire field effect transistor

Abstract

The invention belongs to the field of transistor threshold voltage regulating and controlling technology, and relates to a method for regulating and controlling threshold voltage of a semiconductor nanowire field effect transistor. The method comprises steps of depositing metal-oxide semiconductor materials or metal materials on a prepared semiconductor nanowire field effect transistor or a prepared nanowire array field effect transistor, and carrying out film coating decoration on the surface of the semiconductor nanowire field effect transistor or on the surface of the nanowire array field effect transistor, wherein thickness of a coating film is 0.2-5 nm, thereby regulating and controlling the threshold voltage of the semiconductor nanowire field effect transistor or the nanowire array field effect transistor. According to the invention, the technique is simple; operation is simple; principles are reliable; product cost is low; the method has a wide application prospect in field of electronic switch devices, displays, and biological and chemical sensors; and large-scale industrial production can be easily carried out.

Description

Technical field: [0001] The invention belongs to the technical field of transistor threshold voltage regulation, and relates to a method for regulating the threshold voltage of a semiconductor nanowire field-effect transistor (NWFET), in particular to a method for regulating III-V and metal oxide semiconductor NWFETs by using metal oxide semiconductor nanoparticles The threshold voltage technology can be widely used in high-performance sensors, detectors, optoelectronic devices and other fields. Background technique: [0002] With the development of nanotechnology, one-dimensional semiconductor nanomaterials have become a research hotspot. Compared with bulk materials, semiconductor nanowires have many advantages. For example, due to their small size, nanowires can not only greatly save material costs, improve material utilization efficiency, but also effectively increase the assembly density of devices; Axial and axial p-n, p-i-n heterojunction can improve the conversion e...

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Problems solved by technology

[0003] In order to control the working mode of NWFET, several different processes have been developed to control the threshold voltage of NWFET, for example, by controlling the surface morphology of ZnO nanowires to generate different surface electron trap densities, thereby regulating the free carrier density. Density, and finally enhanced and depleted FETs can be obtained (W.K.Hong, J.I.Sohn, D.K.Hwang, et al., TunableElectronicTransportCharacteristicsofSurface-Architecture-ControlledZnONanowireFieldEffectTransistors, NanoLett., 8, 950, (2008)); Liao et al. use metal doping In 2 o 3 Nanowires to compensate the oxygen vacancies in the nanowires, thereby reducing the carrier density in the nanowires, so that the threshold voltage of the NWFET moves toward the positive voltage direction, and finally an enhanced NWFET is obtained (X.M.Zou, J.L.Wang, X.Q.Liu, et al. ,ControllableElectricalPropertiesofMetal-DopedIn 2 o 3 Nanowires for High-PerformanceEnhancementModeTransistors, NanoLett., 13, 3287 (2013)); Tomioka et al. successfully regulated the threshold voltage of the device by using a metal-wrapped vertical structure InGaAs NWFET gate with a higher work function (K.Tomioka, M.Yoshimura , T.Fukui, AIII–VNanowireChannelonSiliconforHigh-PerformanceVerticalTransistors,Nature,488,189(2012)), however, the complex gate structure will limit the application of this element in electronic devices, sensors and other fields; Han et al. use metal nanowires with different work functions Particles modify the surface of InAs, InP, and InGaAs nanowires, successfully realize the threshold voltage regulation of III-V nanowires, obtain depletion-type and enhancement-type NWFETs, and assemble them together to obtain efficient n-type reverse Device (N.Han, F.Y.Wang, J.J.Hou, etal., TunableElectronicTransportPropertiesofMetal-ClusterDecoratedIII–VNanowireTransistors, Adv.Mater., 25, 4445 (2013)); but metal nanoparticles are unstable in the air and need to be on the surface of the nanowire Deposit a layer of 20nm Al 2 o 3 protective layer, however Al 2 o 3 Layers will limit the application of such devices in the fields of sensors, detectors, etc.; recently, Cheung et al. have used aromatic thiolate monolayers to modify the surface of InAs nanowires. This monolayer can not only passivate the surface states of InAs nanowires and thus Improve its electron mobility, and the aromatic thiolate with electron-donating and electron-withdrawing groups can also adjust the threshold voltage of InAsNWFET to move to positive and negative voltages respectively (H.Y.Cheung, S.P.Yip, N.Han, et al., Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers, ACSNano, 9, 7545 (2015)); However, the aromatic thiolate monolayer has limited ability to attract free electrons in InAs nanowires, and can only move the threshold voltage of InAs NWFETs to the positive direction by 1.5V, which is difficult to enhance type FET; in addition, because the aromatic thiolate cannot exist stably in the air for a long time, the threshold voltage of the device modified by the molecular layer cannot remain unchanged in the air for a long time

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