Rapid preparation method for cuprous oxide nano-film

Abstract

The invention relates to a rapid preparation method for a cuprous oxide nano-film. According to the structural features of cuprous oxide, copper acetate and lactic acid are adopted as raw materials, lauryl sodium sulfate is used as a surface dressing agent, deionized water is used as a solvent, sodium hydroxide is adopted as a pH alkaline modifier, and the cuprous oxide nano-film is prepared through an electrochemical pulse direct-current electrolytic method. According to the rapid preparation method, the process is advanced, data are accurate and full, the nano-film is a yellow film, the section of the nano-film is rectangular, and the film thickness is smaller than or equal to 30 nm; the cuprous oxide nano-film is composed of particles which are in the shape of nano-balls, the diameter of the particles is smaller than or equal to 30 nm, and product purity reaches 99.6%; combination between the nano-film and conductive glass is firm, the nano-film can obviously absorb ultraviolet light and visible light, currents of 240 [mu]A / cm2 can be generated under irradiation of a 100W xenon lamp, and the nano-film can be used for solar power generation and photovoltaic products; the rapid preparation method for the cuprous oxide nano-film is advanced.

Description

technical field [0001] The invention relates to a rapid preparation method of cuprous oxide nano film, which belongs to the technical field of preparation and application of inorganic functional materials. Background technique [0002] Cuprous oxide is a p-type semiconductor material with a bandgap between 2-2.2eV. Due to its high light absorption coefficient, abundant resources and non-toxicity, it is widely used in solar energy conversion, microelectronics, catalysis and other fields; especially Cuprous oxide thin films have been widely used in moisture sensors, electrochromic devices and photovoltaic devices; cuprous oxide thin films are usually prepared by magnetron sputtering, pulsed laser beam deposition, chemical vapor deposition, thermal oxidation and hydrothermal synthesis methods; However, magnetron sputtering, pulsed laser beam deposition, chemical vapor deposition, and thermal oxidation require expensive equipment and consume a lot of energy; while the cuprous ox...

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Problems solved by technology

[0002] Cuprous oxide is a p-type semiconductor material with a bandgap between 2-2.2eV. Due to its high light absorption coefficient, abundant resources and non-toxicity, it is widely used in solar energy conversion, microelectronics, catalysis and other fields; especially Cuprous oxide thin films have been widely used in moisture sensors, electrochromic devices and photovoltaic devices; cuprous oxide thin films are usually prepared by magnetron sputtering, pulsed laser beam deposition, chemical vapor deposition, thermal oxidation and hydrothermal synthesis methods; However, magnetron sputtering, pulsed laser beam deposition, chemical vapor deposition, and thermal oxidation require expensive equipment and consume a lot of energy; while the cuprous oxide films prepared by hydrothermal synthesis are of poor quality and have a long preparation cycle

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