Spinel type Col-xMnxFe2O4 ferromagnetic film and preparation method thereof

A co1-xmnxfe2o4, ferromagnetic thin film technology, applied in the field of spinel type Co1-xMnxFe2O4 ferromagnetic thin film and its preparation, to achieve the effect of good system uniformity, easy control, and precise and controllable chemical composition

Active Publication Date: 2016-08-03
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, no sol-gel method has been used to prepare spi...

Method used

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  • Spinel type Col-xMnxFe2O4 ferromagnetic film and preparation method thereof
  • Spinel type Col-xMnxFe2O4 ferromagnetic film and preparation method thereof
  • Spinel type Col-xMnxFe2O4 ferromagnetic film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Step 1: Dissolve cobalt nitrate, manganese acetate and iron nitrate in a molar ratio of 0.9:0.1:2 in ethylene glycol methyl ether (x=0.1), stir for 30 minutes, then add acetic anhydride to obtain a Fe ion concentration of 0.3 mol / L stable Co 0.9 mn 0.1 Fe 2 o 4 Precursor, Co 0.9 mn 0.1 Fe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3.5:1;

[0031] Step 2: Place the Si substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the FTO / glass substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally dry it with nitrogen. Then put the Si substrate into an oven to bake until dry, take it out and let it stand at room temperature. Then place the clean Si substrate in an ultraviolet light irradiator for 40 minutes to make the surface of the Si substrate reach "atomic cleanliness". Spin-coating Co on Si substrates by spin-coatin...

Embodiment 2

[0035] Step 1: Dissolve cobalt nitrate, manganese acetate and iron nitrate in a molar ratio of 0.8:0.2:2 in ethylene glycol methyl ether (x=0.2), stir for 30 minutes, and then add acetic anhydride to obtain a Fe ion concentration of 0.35 mol / L stable Co 0.8 mn 0.2 Fe 2 o 4 Precursor, Co 0.8 mn 0.2 Fe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 4.5:1;

[0036] Step 2: Incorporate the SrTiO 3 The single crystal substrate was ultrasonically cleaned in detergent, acetone, and ethanol in sequence, and the SrTiO was rinsed with a large amount of distilled water after ultrasonic cleaning for 10 minutes each time. 3 Single crystal substrates were finally blown dry with nitrogen. Then the SrTiO 3 The single crystal substrate is baked in an oven until dry, then taken out and allowed to stand at room temperature. Then the clean SrTiO 3 The single crystal substrate was irradiated for 40min in a UV irradiation instr...

Embodiment 3

[0040] Step 1: Dissolve cobalt nitrate, manganese acetate and iron nitrate in a molar ratio of 0.7:0.3:2 in ethylene glycol methyl ether (x=0.3), stir for 50 minutes, and then add acetic anhydride to obtain a Fe ion concentration of 0.4 mol / L stable Co 0.7 mn 0.3 Fe 2 o 4 Precursor, Co 0.7 mn 0.3 Fe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3.8:1;

[0041] Step 2: LaNiO 3 The single crystal substrate was ultrasonically cleaned in detergent, acetone, and ethanol in sequence, and after each ultrasonic cleaning was performed for 10 minutes, the LaNiO was rinsed with a large amount of distilled water. 3 Single crystal substrates were finally blown dry with nitrogen. Then LaNiO 3 The single crystal substrate is baked in an oven until dry, then taken out and allowed to stand at room temperature. Then the clean LaNiO 3 The single crystal substrate was irradiated for 40min in a UV irradiation instrument to ma...

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Abstract

The invention provides a spinel type Col-xMnxFe2O4 ferromagnetic film and a preparation method thereof. The preparation method comprises the following steps of dissolving cobalt nitrate, manganese acetate and ferric nitrate into ethylene glycol monomethyl ether and acetic anhydride according to the mole ratio of (1-x): x: 2, wherein x ranges from 0.1 to 0.5, and conducting stirring, so that a Co1-xMnxFe2O4 precursor solution is obtained; preparing the spinel type Col-xMnxFe2O4 ferromagnetic film which is high in compactness and uniform in grain size and grows in the preferred orientation of a (311) crystal face on a substrate through a spin-coating method and a layer-by-layer annealing process. According to the spinel type Col-xMnxFe2O4 ferromagnetic film and the preparation method thereof, a sol-gel process is adopted, the equipment requirement is simple, it is easy to meet the experiment conditions, the film is suitable for large-area film formation, chemical components are precise and controllable, and ferromagnetic performance of the Col-xMnxFe2O4 ferromagnetic film can be regulated and controlled through the doping amount of the Mn element.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a spinel type Co 1-x mn x Fe 2 o 4 Ferromagnetic thin film and its preparation method. Background technique [0002] Ferrite is a class of magnetic functional materials with a wide range of applications. Among them, spinel cobalt ferrite has good electromagnetic properties and is widely used in information storage systems, spintronic devices, various magnetic devices and communication equipment. At the same time, cobalt ferrite thin films have certain application prospects in magnetoelectric composite materials. [0003] The crystal structure of spinel ferrite is a face-centered cubic structure, in which oxygen ions are face-centered cubic close-packed, and there are two types of gaps, tetrahedral and octahedral. The unit cell contains 8 molecules and 32 oxygen atoms. A total of 64 tetrahedral positions and 32 octahedral positions are formed. These gaps cannot all be oc...

Claims

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Application Information

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IPC IPC(8): C04B35/32C04B35/36C04B35/624H01F41/24H01F41/22H01F10/20
CPCC04B35/2658C04B35/2666C04B35/624C04B2235/3262C04B2235/3275C04B2235/76C04B2235/761H01F10/20H01F41/22H01F41/24
Inventor 谈国强郑玉娟杨玮乐忠威任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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