CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof

A solar cell, copper-zinc-tin-sulfur technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of unfavorable solar cell promotion and application, high cost of Spiro-OMeTAD, etc., achieve high charge extraction efficiency, reduce application costs, The effect of large abundance

Inactive Publication Date: 2016-08-24
CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently the most widely used organic hole transport material Spiro-OMeTAD is exp

Method used

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  • CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof
  • CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof
  • CuZnSnS-perovskite-based planar heterojunction solar cell and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0033] The glass substrate covered with indium tin oxide was ultrasonically washed with detergent, acetone, and ethanol for 30 minutes, dried with a nitrogen gun, and treated with ultraviolet-ozone for 5 minutes. Put the substrate into the vacuum chamber and evacuate to 5×10 -6 Below torr (Torr), heat the substrate to 400°C, then pass in argon to keep the vacuum at 0.5Pa, and deposit a copper-zinc-tin-sulfur film of about 50nm by intermediate frequency magnetron sputtering. 1mmol of CH 3 NH 3 I and 1 mmol PbI 2Dissolve the powder into 1 mL of dimethylformamide (DMF) solution, then add 100 μL of dimethyl sulfoxide (DMSO) solution to the solution, take 50 μL of the solution and drop it on the surface of the copper-zinc-tin-sulfur film to make it fully Spread out, then rotate the sample, and then anneal the sample at 100°C for 10 minutes, and the thickness of the obtained film is about 300nm, which is the perovskite film layer. On the surface of the perovskite thin film, a Zn...

Embodiment 2

[0035] The glass substrate covered with indium tin oxide was ultrasonically washed with detergent, acetone, and ethanol for 30 minutes, dried with a nitrogen gun, and treated with ultraviolet-ozone for 5 minutes. Put the substrate into the vacuum chamber and evacuate to 5×10 -6 Below torr, the substrate was heated to 400°C, and then argon was introduced to keep the vacuum at 0.5Pa, and a copper-zinc-tin-sulfur film of about 50nm was deposited by intermediate frequency magnetron sputtering. 1.35 mmol of CH 3 NH 3 I and 1.35 mmol PbI 2 Dissolve the powder into 1 mL of dimethylformamide (DMF) solution, then add 100 μL of dimethyl sulfoxide (DMSO) solution to the solution, take 50 μL of the solution and drop it on the surface of the copper-zinc-tin-sulfur film to make it fully Spread out, then rotate the sample, and then anneal the sample at 100 °C for 10 min, and the thickness of the obtained film is about 400 nm. On the surface of the perovskite thin film, a ZnO electron tra...

Embodiment 3

[0037] The glass substrate covered with fluorine-doped tin oxide was ultrasonically washed with detergent, acetone, and ethanol for 30 minutes, dried with a nitrogen gun, and treated with ultraviolet-ozone for 5 minutes. Put the substrate into the vacuum chamber and evacuate to 5×10 -6 Below torr, the substrate was heated to 500°C, and then argon was introduced to keep the vacuum at 0.5Pa, and a copper-zinc-tin-sulfur film of about 50nm was deposited by intermediate frequency magnetron sputtering. 1mmol of CH 3 NH 3 I and 1 mmol PbI 2 Dissolve the powder into 1 mL of dimethylformamide (DMF) solution, then add 100 μL of dimethyl sulfoxide (DMSO) solution to the solution, take 50 μL of the solution and drop it on the surface of the copper-zinc-tin-sulfur film to make it fully Spread out, then rotate the sample, and then anneal the sample at 100 °C for 10 min, and the thickness of the obtained film is about 300 nm. On the surface of the perovskite thin film, a ZnO electron tr...

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Abstract

The invention discloses a CuZnSnS-perovskite-based planar heterojunction solar cell and a manufacturing method thereof. The solar cell comprises a substrate, a transparent conducting layer, a CuZnSnS layer, a perovskite layer, an electron transport layer and a metal electrode layer from bottom to top respectively. In a cell structure disclosed by the invention, the CuZnSnS layer is taken as a hole transport layer in the cell instead of a common organic material, and a charge layer is low in material price, environmentally friendly, high in material stability, high in charge mobility, well matched with a perovskite absorbing layer in energy level and process and easy to prepare over a large area, and has a wide industrial application prospect.

Description

technical field [0001] The invention belongs to the technical field of green energy and relates to the field of thin-film photovoltaic materials and devices, in particular to a battery device using a copper-zinc-tin-sulfur thin film as the interface layer of a perovskite battery and a preparation method. Background technique [0002] Perovskite solar cells are a new type of organic-inorganic hybrid solar cells. Since the first application of this type of material in the field of photovoltaic cells in 2009, it has developed rapidly in just a few years. The conversion efficiency has rapidly exceeded 20% from 3%, and has reached the same level as commercial silicon cells, and has broad development prospects. [0003] In 2009, Akihiro Kojima first introduced CH 3 NH 3 PB 3 and CH 3 NH 3 PbBr 3 Prepared as quantum dots and applied to solar cells, obtained 3.8% CH 3 NH 3 PB 3 Cell conversion efficiency and 3.1% CH 3 NH 3 PbBr 3 battery conversion efficiency. Subsequen...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48H01L51/46H01L51/44
CPCH10K30/80H10K30/00Y02E10/549
Inventor 刘江廖成梅军何绪林叶勤燕
Owner CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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