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Solution preparing method for CsPbI3 film and application of photovoltaic device thereof

A thin-film and solution technology, applied in the materials of organic semiconductor devices, semiconductor/solid-state device fabrication, fabrication/processing of organic semiconductor devices, etc. To avoid problems such as chemical chemistry, to achieve the effect of simple preparation method, avoiding expensive vacuum evaporation equipment investment, and avoiding cumbersome glove box operation

Active Publication Date: 2016-11-23
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But CsPbI 3 It exists stably as a non-perovskite yellow δ phase at room temperature, while the perovskite brown-black α phase that meets the needs of battery devices will quickly transform into a δ phase at room temperature, resulting in rapid inertness of the photovoltaic performance of the device
And usually CsPbI 3 Thin films must be operated in a glove box, and the grains are small, easy to absorb moisture, and will undergo phase transition rapidly in the air environment, which undoubtedly limits the further development of inorganic perovskite solar cells.

Method used

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  • Solution preparing method for CsPbI3 film and application of photovoltaic device thereof
  • Solution preparing method for CsPbI3 film and application of photovoltaic device thereof
  • Solution preparing method for CsPbI3 film and application of photovoltaic device thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] In this example, CsPbI 3 The film solution preparation method includes the following steps:

[0033] 1. CsPbI 3 Preparation of precursor solution: mix 0.5mmol CsI (129mg) and 0.5mmol PbI 2 (231mg) was added to 2mL DMF (N,N-dimethylamide) and stirred until the dissolution was complete, and then 66μL HI (57wt%) was added to aid the dissolution, and the stirring was continued until the dissolution was complete, and left to stand for 48hrs to obtain yellow CsPbI 3 Precursor solution, such as figure 2 (a) shown;

[0034] 2. CsPbI 3 Preparation of precursor film: spin-coating the CsPbI on FTO glass substrate 3 The precursor solution, the rotation speed is 2000rpm, the spin coating time is 30s, and then it is placed on a hotplate at 100℃ and dried for 10min to obtain CsPbI 3 Precursor film, such as figure 2 As shown in (b), while the film is placed in the air, the phase change occurs rapidly, such as image 3 (a) shown;

[0035] 3. CsPbI 3 Preparation of the film: Add 30 mL of isopr...

Embodiment 2

[0037] In this example, CsPbI 3 The structure diagram of the inorganic perovskite photovoltaic device is as figure 1 As shown, the FTO conductive glass is used as the substrate, and the electron transport layer and CsPbI are sequentially deposited on the surface where the FTO film of the FTO conductive glass is located from bottom to top. 3 The light absorbing layer film, the hole transport layer and the top electrode, the specific preparation methods are:

[0038] 1. Deposit a dense layer of TiO on the surface of the FTO film of FTO conductive glass 2 The thin film serves as the electron transport layer: that is, a dense layer of TiO is deposited on FTO glass (purchased directly) by spin-coating isopropyl titanate ethanol solution 2 , And then sintered in air at 450~500℃ for 30~60min to obtain dense layer of TiO 2 Thin film; the dense layer TiO 2 Film immersed in 40mM TiCl 4 In an aqueous solution, treat at 70°C for 30 minutes, and then sinter at 450 to 500°C for 30-60 minutes to o...

Embodiment 3

[0046] In this example, the perovskite solar cell was prepared in the same manner as in Example 2, except that the standing aging time in step 2 was 6 hrs.

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Abstract

The invention discloses a solution preparing method for a CsPbI3 film and application of a photovoltaic device thereof. The solution preparing method for the CsPbI3 film includes the steps that a CsPbI3 pecursor solution is prepared through an ageing method, a CsPbI3 pecursor film is prepared through spin coating and drying, and finally the CsPbI3 film is prepared through a solvent annealing method. Inert atmosphere protection is not needed, an inorganic perovskite battery is high in stability under the atmosphere condition, and the photoelectric efficiency in the earlier stage reaches 3.19% already. The preparing method is simple in process, low in cost and easy to industrially enlarge and is expected to promote development and application of the inorganic perovskite battery.

Description

1. Technical Field [0001] The present invention relates to a CsPbI 3 The thin film solution preparation method and the application of the photovoltaic device belong to the field of preparation technology of the thin film solar cell photovoltaic device. 2. Background technology [0002] Perovskite battery is a new type of solar cell with perovskite film material as the light absorption layer, which can generally be expressed as AMX 3 , Where A represents an organic and inorganic group with a cation radius of 0.164nm~0.259nm. Commonly used are methylamine Methylammonium (Ma), Formamidinium (Fa) and cesium Cs. In recent years, organic-inorganic hybrid perovskite solar cells have attracted widespread attention in the photovoltaic industry due to their excellent photoelectric properties, but they are facing a serious problem, that is, poor thermal stability, which leads to organic-inorganic hybrids. Perovskite solar cells cannot be used in actual production. The poor thermal stabilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/46H01L51/48H10K99/00
CPCH10K71/00H10K71/12H10K85/00H10K30/00H10K2102/00Y02E10/549
Inventor 罗派峰夏伟周圣稳
Owner HEFEI UNIV OF TECH
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