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A self-driven se/zno heterojunction ultraviolet photodetector and its preparation method

A technology of electrical detectors and heterojunctions, applied in circuits, electrical components, semiconductor devices, etc., to achieve excellent fast response performance and stable current output

Inactive Publication Date: 2018-08-24
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been reported that the response time of Se nanoribbon photodetectors is only about 2 ms

Method used

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  • A self-driven se/zno heterojunction ultraviolet photodetector and its preparation method
  • A self-driven se/zno heterojunction ultraviolet photodetector and its preparation method
  • A self-driven se/zno heterojunction ultraviolet photodetector and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1, ZnO nano particle film preparation

[0031] Add 1 g of zinc acetate and 1 g of polyvinylpyrrolidone (PVP) into 10 ml of deionized water, stir the mixed solution for 2 h to completely dissolve the PVP, and slowly add 0.1 ml of acetic acid dropwise during the stirring process. Then the prepared precursor solution was dropped onto a clean quartz substrate, and spin-coated on a spin coater to form a film. The spin-coating process was divided into two steps, 500 rpm for 5 s and 4000 rpm for 30 s. . Then, the spin-coated film was placed in a muffle furnace and annealed at 550°C for 150 min to remove organic matter in the film, and a ZnO film with good crystallinity was obtained.

[0032] Repeat the above steps, and replace zinc acetate with zinc nitrate to obtain similar products.

[0033] Repeat the above operation steps, and set the rotation speed of the second step in the spin coating process to 3500-5000 rpm to obtain ZnO films with different thicknesses. ...

Embodiment 2

[0036] Embodiment 2, ZnO film surface Se film preparation

[0037] Take 1g of selenium powder with a purity of 99.95% in a quartz boat and place it in the center of a 1m tube furnace, and place a half-shielded quartz sheet of ZnO nanoparticle film vertically at a distance of 30cm from the selenium powder. The core temperature of the tube furnace was heated from room temperature to 300 °C within 55 min under nitrogen at a flow rate of 300 sccm, and held at this temperature for 180 min. During the heat preservation process, nitrogen gas flows from the selenium source to the quartz plate at a constant rate to transfer the evaporated selenium vapor to the growth substrate. After the heat preservation is completed, the core temperature is naturally cooled from the highest temperature to room temperature. A uniform and well-crystalline Se film can be grown on the surface of the unshielded ZnO nanoparticle film.

[0038] Repeat the above operation steps, place the quartz plate with...

Embodiment 3

[0043] Example 3, Photoelectric Performance Test of Se / ZnO Heterojunction Optoelectronic Devices

[0044] On the obtained ZnO / Se thin film quartz wafer, press indium electrodes with a diameter of about 0.5 mm on both ends of the blocked and unblocked ZnO films respectively to form a heterojunction photodetector and test its performance with a photoelectric test system. Under the condition of no light at 0V, the dark current of the device is about 1 pA. Under the irradiation of ultraviolet light with a wavelength of 370 nm, the output current of the device is about 10 nA, and the light-dark current ratio reaches 10. 4 . The device also has a fast response speed. Within 0.5 s, the current can drop by 3 orders of magnitude and rise by nearly 4 orders of magnitude. Under the irradiation of pulsed laser, the rise and fall times are 0.69 ms and 13.5 ms, respectively. In addition, the device also has good ultraviolet light selectivity, and the responsivity of ultraviolet light is a...

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Abstract

The invention belongs to the technical field of a photoelectric device and particularly relates to a self-driven Se / ZnO heterojunction ultraviolet photoelectric detector and a manufacturing method thereof. According to the method, a spin coating-high temperature annealing method is employed, and a large-scale ZnO nanometer particle film with thickness in a range of 50-200nm and having an excellent crystallization degree is manufactured; a heat evaporation transfer method is then employed, a Se film with thickness in a range of 1-2mum is deposited on the ZnO nanometer film; the Se / ZnO heterojunctio dual-layer film is utilized to construct a photoelectric detector. The Se / ZnO heterojunction photoelectric detector working under a zero bias voltage has self-driven characteristics, excellent ultraviolet light selectivity and millisecond-level response time, a problem of slow response speed existing in a traditional ZnO-based ultraviolet photoelectric detector is solved, the manufacturing process is simple, and the method is applicable to ultraviolet light detection and the related field.

Description

technical field [0001] The invention belongs to the technical field of photoelectric devices, and in particular relates to a preparation method of a self-driven Se / ZnO heterojunction ultraviolet photodetector. Background technique [0002] Ultraviolet photodetector is an important photoelectric sensing device and has been widely used in many fields such as optical communication, fire warning, biochemical analysis and aerospace. Zinc oxide (ZnO) is an n-type wide bandgap semiconductor material widely used in ultraviolet light detection. In recent years, a variety of ZnO-based nanostructures (nanowires (Y. Zheng, L. Cheng, M. Yuan, Z. Wang, Nanoscale , 2014, 6 , 7842.), nanoribbons (Y. Yang, W. Guo, J. Qi, Appl. Phys. Lett. , 2010, 97 , 223113.), nanoparticles, etc. (Y. Jin, J. Wang, B.Sun , Nano Lett. , 2008, 8 , 1649.)) UV photodetectors have received extensive attention and research. However, due to the process of oxygen adsorption and desorption before and after i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/032H01L31/18
CPCH01L31/032H01L31/109H01L31/18Y02P70/50
Inventor 胡凯滕凤张之明方晓生
Owner FUDAN UNIV
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