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Method sputtering tin target and copper sulfide target to prepare copper-tin-sulfur film and battery

A technology of copper tin sulfur and copper sulfide, which is used in sputtering plating, circuits, photovoltaic power generation and other directions to achieve the effect of good crystal quality, large grain size and dense surface

Active Publication Date: 2017-02-22
YUNNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a more effective preparation method for obtaining copper-tin-sulfur thin films with better quality in view of the problems existing in the preparation of copper-tin-sulfur thin films by the existing sputtering method;

Method used

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  • Method sputtering tin target and copper sulfide target to prepare copper-tin-sulfur film and battery
  • Method sputtering tin target and copper sulfide target to prepare copper-tin-sulfur film and battery
  • Method sputtering tin target and copper sulfide target to prepare copper-tin-sulfur film and battery

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Experimental program
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Effect test

Embodiment 1

[0020] The operation steps are as follows:

[0021] 1. Put the soda-lime glass or molybdenum-coated soda-lime glass substrate in the vacuum chamber of the magnetron sputtering film, and pump the chamber to the back vacuum of 5×10 -4 Pa;

[0022] 2. Adjust the rotation speed of the substrate table to 7 rpm, sputter a tin metal layer on the substrate with a radio frequency sputtering power of 50W, then sputter copper sulfide with a radio frequency sputtering power of 100W, and use Sn / CuS Sequential sputtering three cycles to prepare a copper-tin-sulfur thin film prefabricated layer with a thickness of about 800nm, and the substrate is not heated;

[0023] 3. Place the prefabricated layer of the copper-tin-sulfur film in the annealing furnace, pump the annealing furnace to a low vacuum and then flush nitrogen as a protective gas until the pressure in the annealing furnace reaches 3000Pa to perform soft annealing on the prefabricated layer. At a heating rate of 35°C / min, heat fr...

Embodiment 2

[0027] The operation steps are as follows:

[0028] 1. Put the soda-lime glass or molybdenum-coated soda-lime glass substrate in the vacuum chamber of the magnetron sputtering film, and pump the chamber to the back vacuum of 5×10 -4 Pa;

[0029] 2. Adjust the rotation speed of the substrate table to 7 rpm, sputter a tin metal layer on the substrate with a radio frequency sputtering power of 50W, then sputter copper sulfide with a radio frequency sputtering power of 100W, and use Sn / CuS Sequential sputtering three cycles to prepare a copper-tin-sulfur thin film prefabricated layer with a thickness of about 800nm, and the substrate is not heated;

[0030] 3. Place the prefabricated layer of the copper-tin-sulfur film in the annealing furnace, pump the annealing furnace to a low vacuum and then flush nitrogen as a protective gas until the pressure in the annealing furnace reaches 3000Pa to perform soft annealing on the prefabricated layer. At a heating rate of 30°C / min, heat fr...

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Abstract

The invention discloses a method using radio frequency magnetron tin (Sn) target sputtering and radio frequency magnetron copper sulfide (CuS) target sputtering to prepare a copper-tin-sulfur (Cu2SnS3, CTS) film. The method is characterized in that mixed sputtering of a single-metal tin target and a compound copper sulfide target is used to prepare a copper-tin-sulfur film prefabricated layer, and soft annealing and high-temperature vulcanization are performed on the prefabricated layer to obtain the copper-tin-sulfur film. The method has the advantages that compared with a traditional method sputtering a single-metal copper target and a tin target, the method can well control the carrier concentration in the film; compared with a method sputtering a copper sulfide target and a tin sulfide target, the method can solve the problem that the film easily falls off from a substrate and generates holes due to high-temperature vulcanization; the copper-tin-sulfur film even, compact, and good in photo-electric property is prepared after the prefabricated layer prepared by the sputtering is subjected to the soft annealing and high-temperature vulcanization, and photoelectric conversion efficiency of 1.32% is obtained when the copper-tin-sulfur film is used to prepare a copper-tin-sulfur film battery; a preparation method for preparing the copper-tin-sulfur film battery with a good absorption layer is provided.

Description

technical field [0001] The invention relates to a method for preparing a copper-tin-sulfur film and a battery by sputtering a tin target and a copper sulfide target, and belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] Copper zinc tin sulfur (Cu 2 ZnSnS 4 , CZTS) is considered to be a new type of thin film solar cell material with the most development potential. It has a large light absorption coefficient and a band gap of about 1.45eV to form a better match with the solar spectrum. In the past few years, CZTS thin film solar cells have been extensively studied and great progress has been made. However, as a quaternary compound semiconductor, CZTS easily produces secondary phases during the preparation process, such as Cu 2 S, SnS 2 and Cu 2 SnS 3 etc., have adverse effects on the optical and electrical properties of the film. In contrast, the ternary copper-tin-sulfur (Cu 2 SnS 3 , CTS) There are few ty...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/072H01L31/18C23C14/35C23C14/18C23C14/06C23C14/58
CPCC23C14/0623C23C14/185C23C14/35C23C14/5806C23C14/5866H01L31/0326H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 王书荣杨敏蒋志李志山刘思佳陆熠磊郝瑞亭
Owner YUNNAN NORMAL UNIV
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