Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof

A vertical structure and independent light-emitting technology, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of large pixel dot matrix spacing, large volume, and dazzling LED display images, and achieve the reduction of lamp bead packaging volume, The effects of increased dot matrix density and simplified packaging process

Pending Publication Date: 2017-03-22
福建昌达光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The red, green, and blue chips all have a certain size and need to go through solid crystal and wire bonding processes. Therefore, the red, green and blue (RGB) lamp beads used for full-color display are relatively large in size, and the lamp beads are placed on the circuit board. When the display module is formed, the pixel dot matrix pitch is too large
In addition, the existing LED full-color displays are all packaged with red, green and blue LED chips, and the light-emitting spectrum width of the LED chips is small, which makes the imaging of LED displays more dazzling than CRT displays and PDP displays.

Method used

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  • Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof
  • Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof
  • Vertical structured chip having multiple color blocks independently emitting light and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Fig. 2 shows the implementation steps of the present invention for preparing a vertically structured single-core multi-color block light-emitting chip.

[0029] First, if Figure 2A As shown, the InGaAlN semiconductor light-emitting film 202 is deposited on the epitaxial substrate 201 by metal organic vapor phase epitaxy (MOCVD), and the epitaxial wafer is annealed to activate the P-type layer of the epitaxial film, and vacuum evaporated P Type ohmic cleaning and drying treatment before contacting the reflective metal layer. The method and technology of epitaxial thin film on the epitaxial substrate is a disclosed technology, and the epitaxial substrate 201 can be a sapphire substrate, a silicon carbide substrate, a gallium arsenide substrate or a silicon substrate, or it can be a disclosed pattern Substrates and Composite Substrates.

[0030] Then, if Figure 2B As shown, the P-type ohmic contact metal reflective layer 203 is vacuum evaporated on the InGaAlN semicon...

Embodiment 2

[0045] Figure 3A to Figure 3E A step diagram of another implementation method for preparing a vertical structure single-core multi-color block LED chip according to the present invention is given.

[0046] First formed on the vertical structure wafer as Figure 3A As shown in the photoresist pattern, there is an InGaAlN block 304 exposed except for the electrode pad 305 covered by the photoresist column 306, and the photoresist layer 307 covers the remaining InGaAlN thin film regions In the figure, 302 is the supporting substrate of the wafer, 301 is the metal on the back side of the substrate, and 303 is the metal layer after bonding eutectic. The specific requirements of each structural element in the figure are consistent with the corresponding requirements in Embodiment 1.

[0047] Then spin-coat and deposit the fluorescent adhesive layer on the wafer, and perform mechanical grinding, thinning, polishing and planarization treatment, such as Figure 3B As shown, 308 is ...

Embodiment 3

[0050] Figure 4 It is a schematic diagram of a single-core three-color block chip obtained in another embodiment of the present invention. First, the first photolithography process is carried out on the wafer to expose a block of InGaAlN thin film block, and then it is spin-coated with fluorescent glue, centrifugally precipitated and degassed, and then undergoes thermal curing and subsequent mechanical Grinding, thinning and planarization, and selectively removing the photoresist once, so as to obtain the first color block 403 . Then carry out secondary photolithography, spin-coat and solidify the phosphor powder of the second color, thin and planarize through mechanical polishing, and after selectively removing the photoresist, form the second color block 406 on the second block . When the light of the third color is electroluminescent by the InGaAlN thin film 405, it emits blue light of its natural color. 401 in the figure is the supporting substrate of the chip, and 402...

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Abstract

The invention provides a vertical structured chip having multiple color blocks independently emitting light and a manufacturing method thereof. A P-type ohmic contact metal layer of an indium gallium aluminum nitrogen film of the multi-color-block vertical structured light emitting chip or the indium gallium aluminum nitrogen film is segmented into different blocks, the different blocks share an anode, each block is provided with a separate disconnected N-type electrode metal lead pad, and each block can thus be electrically driven to emit light. Fluorescent powder layers having different colors are prepared on the surfaces of the different blocks of the chip, and when the block on each fluorescent powder layer is electrified to emit light, the light of the block is emitted by fluorescent powder excited by electroluminescence of the indium gallium aluminum nitrogen film to present the light emitting color of the fluorescent powder. The colors of the light are determined by the quantity of the blocks of the chip. The multi-color-block vertical structured chip can emit light of multiple colors, and multi-color light is emitted in the phase of the chip, so that the packaging size of beads for a color display screen can be remarkably reduced, and the dot matrix density of the full-color display screen is remarkably improved.

Description

technical field [0001] The invention belongs to the technical field of LED production. More specifically, the invention relates to a vertical structure chip capable of independently emitting light in multiple color blocks and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED for short) is widely used in the fields of display, indication and lighting, and is an important electro-optic component. LED display can realize large-area display, and has been widely used in outdoor display with long viewing distance. However, in terms of indoor display at close range, the size of the LED device is too large, so that the dot matrix spacing is too large, resulting in a picture resolution that cannot match the cathode ray tube (CRT) display, liquid crystal (LCD) display, plasma display, etc. Body (PDP) display is comparable to organic light-emitting diode (OLED) display, which greatly limits the wide application of LED in the field of indoor displa...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/50H01L33/20H01L33/24H01L33/32H01L27/15
CPCH01L27/15H01L33/20H01L33/24H01L33/32H01L33/48H01L33/50H01L2933/0033H01L2933/0041
Inventor 熊传兵黄斌斌熊川曾繁响
Owner 福建昌达光电有限公司
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