Silicon carbide ceramic and preparation method thereof

A technology of silicon carbide ceramics and silicon carbide, which is applied in the field of ceramic processing, can solve the problems of poor impact resistance, poor impact resistance, and inability to cool with the furnace, and achieve the effect of uniform pressure, the same pressure, and improved flexural strength

Active Publication Date: 2017-04-26
BEIJING GUOWANG FUDA SCI & TECH DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, silicon carbide ceramics have been used as the inner heater protection sleeve in the field of hot-dip galvanizing, but the single-quality traditional silicon carbide products are not impact-resistant, have poor resistance to zinc slag, zinc ash, and nodulation, and poor impact resistance. , cannot be cooled with the furnace, so it has not achieved good economic results when used domestically

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Parts in the embodiments represent parts by weight.

[0038] Silicon carbide powder (purity > 98%, particle size 50 μm and 10 μm respectively) is used for silicon carbide, and hexagonal boron nitride particles (h-BN, average particle size less than 4 μm, purity > 98%) are used for boron nitride.

[0039] Step 1, Grading of SiC Powder

[0040] The silicon carbide powder was weighed according to the mass ratio of 200 μm: 60 μm: 15 μm: 1 μm = 0.55: 0.2: 0.2: 0.05.

[0041] Step 2, wet ball milling

[0042] Mix 68 parts of silicon carbide, 12 parts of boron nitride, 10 parts of silicon powder, 6 parts of aluminum oxide and 4 parts of diyttrium trioxide to form the main raw material; then add 3 parts of polyvinyl alcohol, 2 parts of tetramethylhydrogen Ammonium oxide and 120 parts of deionized water were ball milled for 4 hours to form a slurry with a solid phase content of 50%.

[0043] Step 3, spray granulation

[0044] The slurry is subjected to spray granulation, and...

Embodiment 2

[0052] Parts in the embodiments represent parts by weight.

[0053] Silicon carbide powder (purity > 98%, particle size 50 μm and 10 μm respectively) is used for silicon carbide, and hexagonal boron nitride particles (h-BN, average particle size less than 4 μm, purity > 98%) are used for boron nitride.

[0054] Step 1, Grading of SiC Powder

[0055] The silicon carbide powder was weighed according to the mass ratio of 200 μm: 60 μm: 15 μm: 1 μm = 0.55: 0.2: 0.2: 0.05.

[0056] Step 2, wet ball milling

[0057] Mix 68 parts of silicon carbide, 12 parts of boron nitride, 10 parts of silicon powder, 6 parts of aluminum oxide and 4 parts of diyttrium trioxide to form the main raw material; then add 3 parts of polyvinyl alcohol, 2 parts of tetramethylhydrogen Ammonium oxide and 120 parts of deionized water were ball milled for 4 hours to form a slurry with a solid phase content of 50%.

[0058] Step 3, spray granulation

[0059] The slurry is subjected to spray granulation, and...

Embodiment 3

[0067] Parts in the embodiments represent parts by weight.

[0068] Silicon carbide powder (purity > 98%, particle size 50 μm and 10 μm respectively) is used for silicon carbide, and hexagonal boron nitride particles (h-BN, average particle size less than 4 μm, purity > 98%) are used for boron nitride.

[0069] Step 1, Grading of SiC Powder

[0070] The silicon carbide powder was weighed according to the mass ratio of 200 μm: 60 μm: 15 μm: 1 μm = 0.55: 0.2: 0.2: 0.05.

[0071] Step 2, wet ball milling

[0072] Mix 68 parts of silicon carbide, 12 parts of boron nitride, 10 parts of silicon powder, 6 parts of aluminum oxide and 4 parts of diyttrium trioxide to form the main raw material; then add 3 parts of polyvinyl alcohol, 2 parts of tetramethylhydrogen Ammonium oxide and 120 parts of deionized water were ball milled for 4 hours to form a slurry with a solid phase content of 50%.

[0073] Step 3, spray granulation

[0074] The slurry is subjected to spray granulation, and...

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Abstract

The invention provides silicon carbide ceramic and a preparation method thereof. The preparation method includes: subjecting a ceramic main raw material, a binder accounting for 2.5-3% of weight of the ceramic main raw material and a dispersant accounting for 1.5-2.5% of the weight of the ceramic main raw material to cold isostatic pressing and liquid phase sintering. Generally, dry pressing is adopted for forming a ceramic material; during dry pressing, various performances of a material are influenced by nonuniform density distribution inside a blank caused by nonuniform pressure distribution; compared with dry pressing, cold isostatic pressing is uniform in pressurizing, pressures received by the material in all directions are identical, and sintering density, bending strength and rupture strength of the material are improved.

Description

technical field [0001] The invention relates to the field of ceramic processing, in particular to a silicon carbide ceramic and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) is a typical covalent bond compound, the unit cell is composed of the same silicon-carbon tetrahedron, the silicon atom is in the center, and the surrounding is carbon. In the SiC crystal structure, the C and Si bonds are long, the covalency is strong, and the lattice defects are small. This covalent bonding feature makes the silicon carbide ceramic material have excellent high temperature strength, wear resistance, corrosion resistance and good electrical conductivity, Thermal conductivity; widely used in aviation, aerospace, machinery, automobile, petrochemical, metallurgy and electronics industries. [0003] At present, silicon carbide ceramics have been used in the field of hot-dip galvanizing as the inner heater protection sleeve, but the single-quality tradition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/626C04B35/632
CPCC04B35/565C04B35/62695C04B35/632C04B2235/3217C04B2235/3225C04B2235/386C04B2235/425C04B2235/428C04B2235/48C04B2235/5436C04B2235/658C04B2235/96C04B2235/9607C04B2235/9669
Inventor 张磊张东英丁丁何飞李凤辉贾海坤白建涛
Owner BEIJING GUOWANG FUDA SCI & TECH DEV
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