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A kind of p-type crmcuo amorphous oxide semiconductor thin film and preparation method thereof

A technology of amorphous oxide and amorphous thin film, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve the effect of large-area deposition, good material properties, and low cost

Active Publication Date: 2020-01-17
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) with high purity Cr 2 o 3 , MgO and Cu 2 O powder is used as the raw material, mixed, ground, and sintered in an Ar atmosphere at 1150°C to make CrMgCuO ceramic sheets as the target, where the atomic ratio of Cr, Mg, and Cu is 2:1:0.8;

[0026] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0027] (3) Passing Ar-O 2 For the working gas, gas pressure 2Pa, Ar-O 2 The flow volume ratio is 10:2, the sputtering power is 140W, and the substrate temperature is 200°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type Cr 2 MgCu 0.8 o 4.4 Amorphous thin film.

[0028] Using quartz as the substrate, p-type Cr was prepared according to the above growth steps 2 MgCu 0...

Embodiment 2

[0030] (1) with high purity Cr 2 o 3 , MgO and Cu 2 O powder is used as the raw material, mixed, ground, and sintered in an Ar atmosphere at 1150°C to make CrMgCuO ceramic sheets as the target, where the atomic ratio of Cr, Mg, and Cu is 2:1:1;

[0031] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0032] (3) Passing Ar-O 2 For the working gas, the gas pressure is 3Pa, Ar-O 2 The flow volume ratio is 10:1, the sputtering power is 140W, and the substrate temperature is 300°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out and deposited on the substrate to form a thin film.2 Naturally cooled to room temperature under atmosphere to obtain p-type Cr 2 MgCuO 4.5 Amorphous thin film.

[0033] Using quartz as the substrate, p-type Cr was prepared according to the above growth steps 2 MgCuO ...

Embodiment 3

[0035] (1) with high purity Cr 2 o 3 , MgO and Cu 2 O powder is used as the raw material, mixed, ground, and sintered in an Ar atmosphere at 1150°C to make CrMgCuO ceramic sheets as the target material, in which the atomic ratio of Cr, Mg, and Cu is 2:1:1.2;

[0036] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0037] (3) Passing Ar-O 2 For the working gas, the gas pressure is 4Pa, Ar-O 2 The flow volume ratio is 10:2, the sputtering power is 150W, and the substrate temperature is 400°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type Cr 2 MgCu 1.2 o 4.6 Amorphous thin film.

[0038] Using quartz as the substrate, p-type Cr was prepared according to the above grow...

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Abstract

The invention discloses a p-type amorphous oxide semiconductor thin film. The p-type amorphous oxide semiconductor thin film is CrMCuO, and the thin film is amorphous and has p-type conductivity, wherein Cr is of +3 valence; M is one of Zn, Mg and Mn elements and is of +2 valence, and Cr and M are jointly combined with O to form a p-type conductive matrix of the CrMcuO thin film; Cu is of +1 valence, Cu, Cr and M co-act to form spatial network structures, and the spatial network structures are connected with each other in an amorphous state to achieve the effect of a hole transport channel. The invention further provides a preparation method of the p-type CrMgCuO amorphous oxide semiconductor thin film. The p-type CrMgCuO amorphous thin film is prepared by using a CrMgCuO ceramic chip as the target, adopting a radio-frequency magnetron sputtering method and using Ar-O2 as a working gas. The prepared thin film can be used for p-type amorphous thin film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L21/02H01L29/786H01L29/10
CPCH01L21/02631H01L29/1025H01L29/247H01L29/78693
Inventor 吕建国岳士录叶志镇
Owner ZHEJIANG UNIV
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