High-heat-conduction near-net-shaped diamond/copper composite and preparing method thereof

Abstract

The invention discloses a high-heat-conduction near-net-shaped diamond / copper composite and a preparing method thereof, and belongs to the field of metal materials. The diamond / copper composite is of a three-dimensional communication structure and is composed of a diamond particle framework, a transition layer, metal copper and surface seepage copper; the preparing method comprises the steps that diamond particles subject to salt-bath plating W are subject to near net shaping, and a pressure-free infiltration method is adopted to prepare the high-heat-conduction composite. The method effectively solves the problems about compatibility of diamond and metal, difficult machining of the diamond / copper composite, poor surface quality, single product shapes, high production cost and the like; the prepared composite is high in compactness, uniform in structure distribution, controllable in interface thickness, high in heat conduction rate, simple in process device, high in operation, low in energy consumption cost, capable of being produced in a large-batch manner, and capable of meeting the requirement of the heat management or electronic package field and has the high heat conduction property.

Description

technical field [0001] The invention belongs to the field of metal materials and relates to a diamond / copper composite material, in particular to a diamond / copper composite material with high thermal conductivity and near net shape and a preparation method thereof. Background technique [0002] With the rapid development of electronic information technology, the computing speed of chips in electronic devices is getting faster and faster, and the chip integration is getting higher and higher. The highest power density of high-power integrated circuits has reached 660W / cm 2 , up to 1000W / cm soon 2 . Fast microprocessors and high-power semiconductor devices often cannot work properly due to high temperature in applications. Therefore, the development of electronic packaging materials with high thermal conductivity has become a major bottleneck in the development of electronic information technology. In addition, the thermal expansion coefficient of the electronic packaging ma...

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Problems solved by technology

At present, the relatively mature methods for preparing diamond / copper composite materials mainly focus on high temperature and high pressure method, pressure infiltration method, hot pressing sintering, spark plasma sintering (SPS) method, but the preparation of composite materials by these methods requires huge equipment and consumes energy. The finished product is high, the production cost is high, and the obtained composite material has a single shape, the compatibility between diamond and metal is poor, it is difficult to machine, and the surface quality is not high