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A kind of silver paste of front electrode of high square resistance crystalline silicon solar cell and preparation method thereof

A technology for solar cells and front electrodes, applied in the field of solar cells, can solve problems such as difficulty in achieving efficiency, easy breakdown of PN junctions, etc., and achieve the effects of convenient operation, good storage stability, and high electrode adhesion strength

Active Publication Date: 2019-01-29
湖南省国银新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the PN junction of silicon-based cells with high square resistance is shallower than the PN junction with lower square resistance. If ordinary high-lead glass powder is used for high-temperature corrosion, it is easy to break down the PN junction and it is difficult to achieve the desired efficiency.

Method used

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  • A kind of silver paste of front electrode of high square resistance crystalline silicon solar cell and preparation method thereof
  • A kind of silver paste of front electrode of high square resistance crystalline silicon solar cell and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0031] The preparation of embodiment 1 glass powder

[0032] The following glass powder components were used to prepare glass powder, and DSC was used to measure the softening point. The number, proportion and softening point of the corresponding glass powder are shown in Table 1.

[0033] Table 1

[0034]

[0035] (1) Preparation of glass powder G1

[0036] Described glass frit G1 is made up of each component of following percentage by weight (wt%): the PbO of 40%, the TeO of 36% 2 , 16% SiO 2 , 1.5% Al 2 o 3 , 0.5% MgO, 2.5% Li 2 O, 3.5% ZnO.

[0037] The preparation method of the glass powder comprises the following steps: a. Mix the components of the glass powder evenly, put the mixture into a crucible, and then heat the crucible in an electric furnace for melting at 1300° C. and keep it warm for 10 minutes; b. Immediately pour the molten glass into water for quenching, and dry the glass frit after water quenching; c. Grind the dried glass frit into powder by pla...

Embodiment 2

[0055] The preparation of embodiment 2 organic carrier

[0056] (1) Preparation of organic carrier A1

[0057] The organic carrier A1 is composed of the following components: 1.04g resin matrix, 9.07g terpineol, 0.5g polyamide wax; the resin matrix is ​​composed of 0.187g ethyl cellulose 200, 0.053g ethyl cellulose 300 and 0.8g acrylic resin NeoCryl B-723 composition.

[0058] The preparation method of the organic carrier A1 comprises the following steps:

[0059] ① Dissolution of organic resin: Weigh 0.187g of ethyl cellulose 200, 0.053g of ethyl cellulose 300 and 0.8g of acrylic resin NeoCryl B-723 as the resin matrix, 9.07g of terpineol as the organic solvent, and mix the resin matrix with the organic The solvent is added into a heatable container with shearing effect and mixed, heated and stirred at 90°C for 2 hours until the resin matrix is ​​completely dissolved and becomes a transparent liquid, and then cooled to room temperature to obtain a transparent resin solution...

Embodiment 3

[0071] Example 3 Preparation of Silver Paste for Front Electrode of High Square Resistance Crystalline Silicon Solar Cell

[0072] The silver paste in this example includes the following components: 88g of spherical or nearly spherical silver powder with a D50 of 2.2 μm, an inorganic binder phase composed of 2.5g of glass frit G1 and 0.5g of glass frit G2, and 9g of organic carrier A1.

[0073] Mechanically stir the silver powder, inorganic binder phase and organic carrier A1 to prepare a slurry, and roll it through a three-roll mill to make the slurry finer than 5 μm, and the slurry viscosity is controlled at 200-300 Pa.S (Brookfield HBT, 14 # rotor, 10rpm).

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Abstract

The invention discloses a frontal electrode silver paste of a high-sheet-resistance crystalline silicon solar cell, and a preparation method thereof. The silver paste comprises the following components in percentage by weight: 80-95% of conductive functional phase, 1.5-5% of inorganic bonding phase and 5-10% of organic carrier. The conductive functional phase is composed of one or a plurality of silver powders different in specification. The inorganic bonding phase is composed of one or a plurality of glass powders different in softening point. The preparation method comprises the steps of mixing up the conductive functional phase, the inorganic bonding phase and the organic carrier to prepare the paste material, and rolling the paste material through a three-roller machine. In this way, the fineness of the paste material is smaller than 5 mum, and the viscosity of the paste material is controlled to be between 200-300 Pa.S. According to the technical scheme of the invention, the glass powder preparation is conducted by adopting particular elements, so that the etching speed of glass powders on a silicon nitride antireflection film is conveniently controlled. Therefore, the sintering window is larger. By adopting multiple functional-phase powders different in specification and multiple glass powders different in thermodynamic performance, the paste material is better in electrical performance and mechanical performance during the sintering process. Meanwhile, the damage to P / N junctions is avoided.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silver paste for a front electrode of a high square resistance crystalline silicon solar cell and a preparation method thereof. Background technique [0002] As a new type of clean energy, solar energy is expected to become an important way for human long-term development to obtain energy needs. Therefore, in recent years, it has received more and more attention and production. A solar cell is a device that converts light energy into electrical energy through the photoelectric effect. Radiation of a suitable wavelength incident on a P-N junction of a semiconductor acts as an external energy source for the generation of hole-electron pairs in the semiconductor. Due to the potential difference at the P-N junction, holes and electrons move across the junction in opposite directions. The electrons move to the negative contact, and the holes move to the positive contact, there...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/16H01B1/22H01B13/00H01L31/0224
CPCH01B1/16H01B1/22H01B13/00H01L31/022425Y02E10/50
Inventor 王翔
Owner 湖南省国银新材料有限公司