Crystal growth method and application thereof

A crystal growth and nanocrystal technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low dislocation density, crystal consistency and poor yield, so as to reduce laser power and crystal growth speed Fast and high crystal growth efficiency

Active Publication Date: 2017-06-13
CHONGQING HUAPU QUANTUM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the Kyropoulos method, after the top seed crystal is seeded, the crystal is not pulled upward but is soaked in the melt to grow the crystal. The grown crystal does not contact the crucible, the dislocation density is low, and the single crystal is good, but the crystal growth is strongly dependent on artificial Accumulation of experience, poor crystal consistency and yield

Method used

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  • Crystal growth method and application thereof
  • Crystal growth method and application thereof

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Experimental program
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Embodiment 1

[0039] This embodiment relates to a crystal growth method, comprising the following steps:

[0040] Calcium fluoride (GaF 2 ) powder and ytterbium oxide (Yb 2 o 3 ) powder weighed 30g according to the molar ratio of 1:0.075, wherein the mass of calcium fluoride powder was 21.8g, and the mass of ytterbium oxide powder was 8.2g. Put the powder into the mortar and stir well, so that the powder can be mixed together as much as possible. The mixed powder is placed in the annular powder feeder 301 , and the powder is uniformly output on the laser sintering platform 302 through the nozzle of the annular powder feeder. The annular powder feeder is controlled by an external program, which can change the powder feeding time and powder feeding rate.

[0041] The entire set of devices is placed in a sealed environment 502 filled with argon (Ar) atmosphere after being evacuated. The laser 101 used in this experiment is a semiconductor laser, the output laser wavelength is 976nm, and t...

Embodiment 2

[0045] A kind of preparation method of pottery that present embodiment relates to, comprises the steps:

[0046] Alumina (Al 2 o 3 ) powder and ytterbium oxide (Yb 2 o 3 ) powder weighed 50g according to the molar ratio of 1:1, fully ground and stirred evenly. The mixed powder passes through the powder transmission conduit 5 and is evenly output on the movable working platform 10 , and the powder surface is flattened and compacted by the ball mill 9 to form a regular tablet shape 8 .

[0047] The reaction chamber 502 is filled with argon (Ar) gas through the gas inlet 5021, so that the ceramic growth process is in an inert gas atmosphere. Laser 1 is a semiconductor laser, the output laser wavelength is 976nm, and the laser is output through the output end of the coupling fiber. The laser light passes through a reflector 202 to change the laser transmission direction, and then passes through a focusing lens 203 to focus the light spot. The infrared thermometer 401 monitor...

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Abstract

The invention provides a crystal growth method and application thereof. The crystal growth method comprises the following steps: S1, uniformly mixing a crystal growth material with an ytterbium ion compound, and pressing the mixture into a tablet; S2, carrying out laser sintering growth on the tablet, so as to obtain microcrystals or nanocrystals; S3, adjusting the size of a laser spot to enable the laser spot to cover the surface of a whole seed crystal, and carrying out in situ annealing to obtain crystals. The crystal growth method can be used for preparing ceramic. According to the research on the crystal growth method which is high in efficiency, high in stability and low in equipment cost, a step-by-step laser sintering method is adopted; the laser power density required in the laser sintering process in the second step is much lower than that required in the laser sintering process in the first step, so that the laser power can be greatly reduced, and crystal growth equipment is very easy to satisfy; furthermore, energy consumption is reduced.

Description

technical field [0001] The invention relates to the field of crystal preparation, more specifically, to a high-quality crystal growth method and its application. Background technique [0002] The process in which a substance transforms from gas phase, liquid phase, and solid phase under certain conditions such as temperature, pressure, concentration, medium, and pH to form crystals of a specific linear size is called crystal growth. [0003] Crystal growth methods mainly include pulling method, heat exchange method, guided mode method, crucible descent method, kyropoulos method, temperature gradient method, etc. In the pulling method, high-temperature refractory oxides, such as zirconia and alumina, are usually used as insulation materials to make the furnace body a weak oxidizing atmosphere, which has an oxidizing effect on the crucible, and is easy to cause contamination to the melt, forming in the crystal Defects such as inclusions, and for those materials that are highl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B1/02C30B30/00C30B33/02
CPCC30B1/02C30B30/00C30B33/02
Inventor 曾和平江梦慈
Owner CHONGQING HUAPU QUANTUM TECH CO LTD
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