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Photoresist composition and preparation method thereof

A composition and photoresist technology, applied in the field of photolithography, can solve the problems of low utilization rate of photoresist composition, large organic solvent pollution, etc., and achieve good technical adaptability and market prospects, good adhesion performance, excellent Effect of Surface Patterning Ability

Inactive Publication Date: 2017-06-13
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a photoresist composition and a preparation method thereof, aiming at overcoming the shortcomings of low utilization rate of the current photoresist composition and large organic solvent pollution, and developing a non-organic solvent system, which is green and environmentally friendly, and A photoresist composition capable of forming a uniform and good photoresist film on a substrate without using a conventional spin-coating process

Method used

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  • Photoresist composition and preparation method thereof
  • Photoresist composition and preparation method thereof

Examples

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Embodiment 1

[0044] The invention provides a photoresist composition, comprising the following components: an alkali-soluble resin with polymerization activity and optical activity; an oligomer or monomer containing at least two unsaturated double bonds and optical activity; a photosensitizer ; Non-ionic or cationic surfactants; Thermal inhibitors; Auxiliaries; Solvents.

[0045] Further, the composition ratio of each component in the above photoresist composition is as follows according to mass percentage: 20%-40% of alkali-soluble resin; 5%-30% of oligomer or monomer; 0.5%-10% of photosensitizer, Preferably 2%-4%; surfactant 2%-4%; thermal polymerization inhibitor 0.1%-0.2%; auxiliary agent 1%-5%; solvent 20%-50%. The compounds of all components are of electronic grade, free from metal ion impurity contamination.

[0046] In the above solution, the molecular weight of the alkali-soluble resin is 1,000-100,000, preferably 3,000-20,000. The alkali-soluble resin is selected from the group...

Embodiment 2

[0073] The composition and preparation method of the photoresist composition provided in this example and the method of forming a thin film on the surface of the conductive substrate are basically the same as those in Example 1, and only the differences will be described below.

[0074]In this embodiment 2, according to mass percentage, the content of each component in the photoresist composition is as follows: 40% alkali-soluble resin, 22.9% oligomer or monomer, 10% photosensitizer , 2% surfactant, 0.1% thermal polymerization inhibitor, 5% auxiliary agent and 20% solvent.

[0075] Among them, the alkali-soluble resin is preferably a combination of polyurethane acrylate resin and acrylate phenolic resin, and the mass ratio of the two is 1:1.

[0076] The oligomer or monomer is preferably a combination of optically active trimethylolpropane triacrylate and ethoxylated trimethylolpropane triacrylate, and the mass ratio of the two is 1:1.

[0077] The photosensitizer is preferab...

Embodiment 3

[0089] The composition and preparation method of the photoresist composition provided in this example and the method of forming a thin film on the surface of the conductive substrate are basically the same as those in Example 1, and only the differences will be described below.

[0090] In this embodiment 3, according to mass percentage, the content of each component in the photoresist composition is as follows: 40% alkali-soluble resin, 5% oligomer or monomer, 0.5% photosensitizer , 3.3% surfactant, 0.2% thermal polymerization inhibitor, 1% auxiliary agent and 50% solvent.

[0091] Among them, the alkali-soluble resin is preferably a combination of acrylate-modified amino epoxy resin (epoxy equivalent 400-500) and polyether aminoacrylate resin, and the mass ratio of the two is 1:1.

[0092] The oligomer or monomer is preferably a combination of optically active polyester acrylate and silicone-modified acrylate resin, and the mass ratio of the two is 1:1.

[0093] The photose...

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Abstract

The invention provides a photoresist composition and a preparation method thereof. The photoresist composition comprises the following components: alkali-soluble resin having polymerization activity and optical activity, a low polymer or monomer at least containing two unsaturated double bonds and having optical activity, photosensitizer, nonionic or cationic surfactant, thermal polymerization inhibitor, aids and solvent. The photoresist composition provided by the invention uses no toxic / harmful organic solvent, hardly results in organic solvent volatilization, belongs to a green environment-friendly product and can not bring about an environmental pollution problem. The photoresist composition can be uniformly deposited on the surface of a conductive base material through an electroplating deposition method; the film thickness of the photoresist is up to 10-100 micrometers, and the effective availability of the photoresist is up to 90% or above; and the photoresist composition overcomes the problems that the photoresist composition utilization ratio is low, materials are wasted seriously and volatilization of toxic / harmful organic solvent results in environmental pollution due to the use of a spin coating process in the prior art.

Description

technical field [0001] The invention belongs to the technical field of photolithography, and relates to a photoresist composition and a preparation method thereof. Background technique [0002] Photoresist, also known as photoresist, is a photosensitive mixture composed of photosensitive resin, photosensitizer and solvent, which can undergo crosslinking, curing or degradation reactions under the irradiation of ultraviolet light beams. It has a wide range of applications in electronic fields such as integrated circuits, liquid crystal displays, solar photovoltaics, and micro-electromechanical systems. [0003] Semiconductor integrated circuits have very fine structures, and microcircuits are usually manufactured by the following method: attaching a photoresist to a substrate or a conductive film to deposit a layer of photoresist film, and then exposing and developing the photoresist to form Specific patterns, and then through processes such as sputtering, etching or electrop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/027C25D9/02
Inventor 胡少坚戚继鸣陈寿面
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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