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Pressure sensor material and preparation method thereof

A pressure sensor and raw material technology, applied in the field of sensor materials, can solve the problems of heavy weight, large structure and size, unable to provide electrical output, etc., and achieve the effect of excellent passivation resistance, high voltage gradient, and suitable for large-scale industrial preparation.

Inactive Publication Date: 2017-08-25
合肥羿振电力设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Pressure sensor is the most commonly used sensor in industrial practice. It is widely used in various industrial automatic control environments, involving water conservancy and hydropower, railway transportation, intelligent buildings, production automatic control, aerospace, military industry, petrochemical, oil wells, electric power, ships, machine tools In many industries such as pipelines and pipelines, traditional pressure sensors are mainly mechanical structural devices, and the deformation of elastic elements is used to indicate pressure. However, this structure is large in size and heavy in weight, and cannot provide electrical output.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The pressure sensor material of this embodiment includes the following raw materials in parts by weight:

[0028] 5 parts of bismuth trioxide, 5 parts of sodium carbonate, 10 parts of titanium dioxide, 55 parts of zinc oxide, 0.5 parts of dicobalt trioxide, 4 parts of strontium titanate, 5 parts of yttrium oxide, 2 parts of aluminum nitrate, 3 parts of silicon dioxide, 10 parts of polyvinyl alcohol.

[0029] The preparation method of the pressure sensor material of this embodiment includes the following steps:

[0030] Step 1: Mix bismuth trioxide, sodium carbonate, and titanium dioxide, add deionized water, ball mill for 10 hours, and then dry to obtain a powder, and keep the powder at 880°C for 3 hours in an air environment to obtain a mixture A ;

[0031] Step 2, preheating yttrium oxide at 350°C for 1 hour, and then calcining at 950°C for 1 hour in a nitrogen atmosphere to obtain a sintered product B;

[0032] In step 3, the mixture A obtained in step 1, the mixt...

Embodiment 2

[0035] The pressure sensor material of this embodiment includes the following raw materials in parts by weight:

[0036] 10 parts of bismuth trioxide, 10 parts of sodium carbonate, 20 parts of titanium dioxide, 65 parts of zinc oxide, 1 part of dicobalt trioxide, 6 parts of strontium titanate, 10 parts of lanthanum oxide, 5 parts of aluminum nitrate, 6 parts of silicon dioxide, 20 parts of polyvinyl alcohol.

[0037] The preparation method of the pressure sensor material of this embodiment includes the following steps:

[0038] Step 1, mix bismuth trioxide, sodium carbonate, and titanium dioxide, add deionized water, ball mill for 15 hours, and then dry to obtain a powder, and keep the powder at 950°C for 5 hours in an air environment to obtain a mixture A ;

[0039] Step 2, preheating lanthanum oxide at 450°C for 2 hours, and then calcining at 1050°C for 3 hours in a nitrogen atmosphere to obtain a sintered product B;

[0040] In step 3, the mixture A obtained in step 1, t...

Embodiment 3

[0043] The pressure sensor material of this embodiment includes the following raw materials in parts by weight:

[0044] 8 parts of bismuth trioxide, 8 parts of sodium carbonate, 15 parts of titanium dioxide, 60 parts of zinc oxide, 0.8 parts of dicobalt trioxide, 5 parts of strontium titanate, 8 parts of ytterbium oxide, 3 parts of aluminum nitrate, 4.5 parts of silicon dioxide, 15 parts of polyvinyl alcohol.

[0045] The preparation method of the pressure sensor material of this embodiment includes the following steps:

[0046]Step 1, mix bismuth trioxide, sodium carbonate, and titanium dioxide, add deionized water, ball mill for 13 hours, and then dry to obtain a powder, and keep the powder at 910°C for 4 hours in an air environment to obtain a mixture A ;

[0047] Step 2, preheating ytterbium oxide at 400°C for 1.5 hours, and then calcining at 1000°C for 2 hours in a nitrogen atmosphere to obtain sintered body B;

[0048] In step 3, the mixture A obtained in step 1, the...

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Abstract

The invention discloses a pressure sensor material. The pressure sensor material is characterized by being prepared from, by weight, 5-10 parts of bismuth trioxide, 5-10 parts of sodium carbonate, 10-20 parts of titanium dioxide, 55-65 parts of zinc oxide, 0.5-1 part of cobaltic oxide, 4-6 parts of strontium titanate, 5-10 parts of rare-earth oxide, 2-5 parts of aluminium nitrate, 3-6 parts of silicon dioxide and 10-20 parts of polyvinyl alcohol. The pressure sensor material has relatively high nonlinear coefficients, relatively low leakage currents and relatively high large-current resistance capacity and voltage gradients, at the same time, the pressure sensor material is low in density, high in strength, excellent in passivation resistance property and good in heat resistance property, the preparation method of the pressure sensor material is simple, the raw materials are easy to obtain, the production cost is low, and the pressure sensor material has good application prospects.

Description

technical field [0001] The invention relates to the technical field of sensor materials, in particular to a pressure sensor material and a preparation method thereof. Background technique [0002] Pressure sensor is the most commonly used sensor in industrial practice. It is widely used in various industrial automatic control environments, involving water conservancy and hydropower, railway transportation, intelligent buildings, production automatic control, aerospace, military industry, petrochemical, oil wells, electric power, ships, machine tools In many industries such as pipelines and pipelines, traditional pressure sensors are mainly mechanical structural devices, and the deformation of elastic elements is used to indicate pressure, but this structure is large in size and heavy in weight, and cannot provide electrical output. With the development of semiconductor technology, semiconductor pressure sensors have emerged as the times require. It is characterized by small...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B26/04C04B35/453C04B35/622C04B20/04G01L1/18G01L9/06
CPCC04B26/04C04B20/04C04B35/453C04B35/622C04B2235/3201C04B2235/3232C04B2235/6567G01L1/18G01L9/06C04B18/023C04B22/06C04B14/30C04B14/305C04B14/06C04B22/085
Inventor 武行峰
Owner 合肥羿振电力设备有限公司
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