Self-driven photoelectric detector based on graphene electrode and perovskite light absorption layer and preparation method thereof

A graphene electrode and photodetector technology, applied in the field of photoelectric detection, can solve the problems of long response time of photoconductive photodetector, low responsivity of Schottky photodetector, etc. Thermal conductivity, quick recovery effect

Active Publication Date: 2017-09-22
SHAANXI NORMAL UNIV
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing photodetectors face many problems. For example, the response time of photoconductive photodetectors is long, usually on the order of seconds; the responsivity of Schottky pho...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Self-driven photoelectric detector based on graphene electrode and perovskite light absorption layer and preparation method thereof
  • Self-driven photoelectric detector based on graphene electrode and perovskite light absorption layer and preparation method thereof
  • Self-driven photoelectric detector based on graphene electrode and perovskite light absorption layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0031] The preparation method of the self-driven photodetector based on the graphene electrode and the perovskite light-absorbing layer of the present invention comprises the following steps.

[0032] Step 1: Substrate pretreatment.

[0033] (1) Based on FTO transparent conductive glass (2.5 cm × 2.5 cm), use zinc powder and dilute hydrochloric acid to etch FTO into two independent electrodes, the first conductive glass electrode 1 and the second conductive glass electrode 5, and the middle groove The track width is 2 mm. Dilute hydrochloric acid is formed by mixing 1 volume mass fraction of 38% concentrated hydrochloric acid and 4 volumes of water.

[0034] (2) ultrasonically clean the etched FTO conductive glass successively in acetone, isopropanol and ethanol for 5 minutes, and then blow dry with nitrogen;

[0035] Step 2: preparing an electron transport layer.

[0036] (1) Deposit a layer of TiO on the surface of the first conductive glass electrode 1 at the end of the ...

example 2

[0048] In this example, the hole transport layer is spin-coated on the pure iodine perovskite absorber layer, and its material is PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) poly[bis( 4-phenyl) (2,4,6-trimethylphenyl) amine], other steps are identical with example 1, the light of the prepared self-driven perovskite photodetector under 560nm, 30mW optical power pulse light source Current change graph as Figure 4 As shown, the photoresponse switch ratio can reach 79800.

example 3

[0050] In this example, chloroiodide perovskite CH was spin-coated on the transferred substrate containing graphene electrodes. 3 NH 3 PB 3-x Cl x Absorbing layer, other steps are the same as Example 1, and the photoresponse switching ratio of the prepared self-driven perovskite photodetector can reach 65,000 under the condition of 560nm pulse light source and 30mW optical power.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a self-driven photoelectric detector based on a graphene electrode and a perovskite light absorption layer and a preparation method thereof. The method comprises the following steps: step 1, etching a conductive glass substrate after being cleaned and dried into separate two parts that respectively are a first conductive glass electrode and a second conductive glass electrode; step 2, preparing an electron-transporting layer on the conductive glass electrode; step 3, transferring a graphene thin film on the electron-transporting layer and the second conductive glass electrode to form the graphene electrode that connects the electron-transporting layer and the second conductive glass electrode; and step 4, coating the perovskite light absorption layer on the graphene electrode positioned on the electron-transporting layer to form the self-driven photoelectric detector. Photons are absorbed by the arranged perovskite light absorption layer to generate electrons and hole pairs; because the perovskite is a bipolar material, the effective transportation for the electrons and the holes is implemented; the electrons transported to graphene are transferred to the TiO<2> electron-transporting layer via the graphene due to a tunneling effect of the graphene and are collected by the conductive glass electrodes.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a self-driven photodetector based on a graphene electrode and a perovskite light-absorbing layer and a preparation method thereof. Background technique [0002] Photodetectors have the function of converting optical signals into electrical signals, and are the basic devices supporting the field of optical information technology. Due to their advantages of small size and low energy consumption, photodetectors have been used in all aspects of our lives, and have become an important part of today's The most widely used type of electronic device. Photodetectors mainly include photoconductive photodetectors, p-n junction diode photodetectors and Schottky junction photodetectors. [0003] Existing photodetectors face many problems. For example, the response time of photoconductive photodetectors is long, usually on the order of seconds; the responsivity of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/15H10K30/152H10K30/151H10K30/20H10K30/81Y02E10/549
Inventor 刘治科李娟袁世豪刘丹李婧胡西红高斐刘生忠
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products