Dual-heterojunction optical detector and preparation method therefor

Abstract

The invention relates to a preparation method of a dual-heterojunction optical detector. The preparation method comprises the steps of (a), cleaning a semi-insulated and semi-transparent substrate; (b), enabling a bottom electrode layer to be grown on the substrate; (c), enabling a first MoS<2> layer to be grown on the bottom electrode layer; (d), enabling a hybrid perovskite layer to be grown on the first MoS<2> layer; (e), enabling a second MoS<2> layer to be grown on the hybrid perovskite layer; and (f) enabling a top electrode to be grown on the second MoS<2> layer. By virtue of the hybrid perovskite dual-heterojunction, the background current carriers in a two-dimensional material channel can be completely depleted, so that the dark current of the device can be remarkably lowered, and the detection performance of the device in weak light can be improved; the preparation method has the advantages of simple preparation process, low production cost, no need of expensive instrument equipment and the like; and the prepared photoelectric detector can work in a zero gate voltage and low source-drain bias voltage, and has excellent low-power-consumption characteristic, simple structure, high efficiency, quick response, stable operation and long service life.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric detection, and in particular relates to a double heterojunction photodetector and a preparation method thereof. Background technique [0002] Two-dimensional materials represented by graphene and two-dimensional transition metal chalcogenides have received more and more attention in the field of photodetection. Among them, molybdenum disulfide (MoS 2 ) represented by transition metal sulfide two-dimensional materials have a band gap close to that of traditional semiconductor materials such as silicon and gallium arsenide, and the energy bandgap changes with the thickness, so it has broad application prospects in the field of new photodetection. However, problems such as interface defects will inevitably be introduced in the preparation process of this kind of material, which makes the material have a high background carrier concentration at zero gate voltage, which in turn lea...

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Problems solved by technology

However, problems such as interface defects will inevitably be introduced in the preparation process of this kind of material, which makes the material have a high background carrier concentration at zero gate voltage, which in turn leads to a high dark current of the photodetector. These problems limit Its application in the field of photoelectric detection

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