Zinc oxide-polyaniline sandwiched ultraviolet photoelectric detector and preparation method thereof

A technology of electrical detectors and polyaniline, which is applied in the field of ultraviolet photodetectors and its preparation, can solve the problems of narrow sunlight absorption wavelength range, low light utilization efficiency, and low quantum efficiency, so as to reduce the probability of carrier recombination, Good development prospects and simple preparation methods

Inactive Publication Date: 2017-11-10
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0004] However, zinc oxide is easily corroded by light, and the absorption wavelength range of sunlight is narrow. It only responds to ultraviolet light, and the utilization efficiency of visible light is low. At the same time, the recombination rate of photogenerated carriers in nano-zinc oxide is high, and the quantum efficiency is low.

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  • Zinc oxide-polyaniline sandwiched ultraviolet photoelectric detector and preparation method thereof
  • Zinc oxide-polyaniline sandwiched ultraviolet photoelectric detector and preparation method thereof
  • Zinc oxide-polyaniline sandwiched ultraviolet photoelectric detector and preparation method thereof

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Embodiment 1～4

[0027] Embodiment 1~4, the preparation method of a kind of ultraviolet photodetector of zinc oxide / polyaniline sandwich structure is as follows:

[0028] (1) Cut the ITO conductive glass into a size of 10mm×20mm, place it in acetone, absolute ethanol and distilled water for 30 minutes, and place it in a stainless steel electrode holder after drying. Preparation of Zn(NO 3 ) 2 The aqueous solution of KCL was used as electrolyte A, and a three-electrode system was adopted, with a platinum sheet electrode as a counter electrode and a saturated calomel electrode as a reference electrode for electrochemical reaction. After the reaction is completed, the product is taken out, washed 2 to 3 times with distilled water, and dried at room temperature to obtain the product zinc oxide nanosheet array.

[0029] (2) Prepare dilute hydrochloric acid or dilute sulfuric acid solution B of aniline with 1mol / L dilute hydrochloric acid or dilute sulfuric acid solution according to a certain vol...

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Abstract

The invention belongs to the field of inorganic nano-materials, and discloses a zinc oxide-polyaniline sandwiched ultraviolet photoelectric detector and a preparation method thereof. The detector is formed by assembling a layer of zinc oxide nano-sheet array on ITO and a layer of polyaniline nano-wire on the zinc oxide nano-sheet array by taking ITO conductive glass as a substrate. The preparation method of the ultraviolet photoelectric detector comprises the steps of: preparing a layer of zinc oxide nano-sheet array on the ITO substrate by adopting an electrochemical method at first, then, preparing the polyaniline nano-wire through a chemical oxidization method, spinning the prepared polyaniline nano-wire on the zinc oxide nano-sheet array, and finally, assembling all products, so that the ultraviolet photoelectric detector is prepared. Due to the nanometer size and the morphology of the material, the relatively large specific surface area is obtained; a site, where the material acts with ultraviolet light, is increased; and therefore, the ultraviolet photoelectric detector has the characteristics of being steady in performance, high in sensitivity and short in response time.

Description

technical field [0001] The invention belongs to the field of inorganic nanometer materials, in particular to an ultraviolet photodetector with a zinc oxide-polyaniline sandwich structure and a preparation method thereof. Background technique [0002] Ultraviolet photodetectors have broad application prospects in green lighting, optical communications, environmental monitoring, and national defense, and have extremely high military and civilian values. They have become one of the research hotspots in the field of photoelectric detection in the world in recent years. The traditional ultraviolet detector is mainly based on ultraviolet photomultiplier tubes, but its manufacturing process is relatively complicated, large in size, easy to damage, and requires high working conditions, which seriously limits its wide application and development. In recent years, the growing wide-bandgap semiconductor has opened up new fields for the research of ultraviolet detectors, and it has beco...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48B82Y30/00
CPCB82Y30/00H10K71/12H10K85/111H10K30/152Y02E10/549
Inventor 易国斌谭淼秦佩俎喜红王欢罗洪盛
Owner GUANGDONG UNIV OF TECH
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