Silicon nitride-comprising nanomaterial and preparation method and use thereof

A technology of nanomaterials and silicon nitride, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of large waste of heat energy, poor material structure strength, high production cost, etc., and achieve a good cycle The effect of service life, structural strain relief, and production time saving

Active Publication Date: 2017-11-10
江永斌
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The lithium-ion battery negative electrode material that above-mentioned method is made adopts PVD (Physical Vapor Deposition)—Physical Vapor Deposition method to prepare; promptly utilizes physical process to realize material transfer, the process that atom or molecule is transferred on the substrate surface, its shortcoming is that : First, after natural cooling to below 200°C or to the natural temperature of the atmosphere, the material after the carbonization reaction is taken out, the waiting time is long, the heat energy is wasted, and the production cost is high; the second is that the production time of the negative electrode material by physical vapor deposition is long, The silicon carbide material is not fully covered, and the structural strength of the material is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon nitride-comprising nanomaterial and preparation method and use thereof
  • Silicon nitride-comprising nanomaterial and preparation method and use thereof
  • Silicon nitride-comprising nanomaterial and preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0051] Specific embodiment 1 (see Figure 1-25 ):

[0052] The first step: Weigh the cotton-like elemental silicon nanowire clusters (such as 1-8) provided by Taizhou Jinbo Qidao Nano Material Technology Co., Ltd., enter the vacuum tube furnace, and replace the air in the vacuum tube furnace with nitrogen to reach When the oxygen content is at 600PPm, start heating the furnace to 1150°C at a rate of 12°C / min, keep the temperature constant for 5 hours, then raise the temperature to 1190°C at a rate of 1°C / min, keep the temperature constant for 1 hour, then cool down naturally to 350°C, absorb The surface of the cotton-like elemental silicon nanowire cluster in the furnace penetrates deeply into the material covered with the silicon nitride layer (as shown in Figure 9-16).

[0053] The second step: Weigh 20 grams of high-temperature petroleum asphalt and 100 grams of the material coated with silicon nitride layer in step 1 and mix them into a dry ball mill for uniform dispersio...

example 2

[0056] Example 2, such as Figure 1-24 , Figure 26 Shown:

[0057] All others refer to Example 1, the difference is: the second time described in step 1 is heated up to 1190 ° C, and the temperature is kept at a constant temperature for 3 hours. The button battery made according to this example has a charging specific capacity of 2326mAh / g for the first time. The discharge specific capacity is 2156mAh / g, the second charge specific capacity is 2115mAh / g, the second discharge specific capacity is 2009mAh / g, the first Coulombic efficiency reaches 92.5%, and the capacity can reach 1816.5mAh / g after 100 cycles.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical fields of a battery material and a silicon nitride nanomaterial, and relates to a silicon nitride-comprising nanomaterial and a preparation method and use thereof. A flocculence-shaped elementary silicon nanowire clew material is pumped with more than one kind of nitrogen, ammonia gas and hydrogen to replace air in a furnace; two times of heating and heat preservation are performed to perform a high-temperature gas phase chemical modification penetration reaction on the surface of the flocculence-shaped elementary silicon nanowire clew to generate a material with a silicon nitride coating layer; next, the material is smashed and sieved and then mixed with one or more than two kinds of phenolic resin, glucose, sucrose, starch, polyacrylonitrile, polymethyl methacrylate, polyvinyl chloride or asphalt; and then the mixture is continuously pumped with an inert gas to be subjected to heating and constant-temperature treatment to obtain a carbon material layer which coats the silicon nitride coating layer, wherein the obtained material can be used for manufacturing a negative electrode material of a lithium ion battery, functional ceramic, LED fluorescent powder, a high-precision machine part, a heat conducting coating layer, a solar energy and microelectronic component and an optical device.

Description

technical field [0001] The invention belongs to the technical field of battery materials and silicon nitride nanomaterials, and specifically relates to a high-capacity, low cycle stability attenuation rate, which is coated with silicon nitride and silicon nitride on the outer surface of the cotton wool-like elemental silicon nanowire cluster and its gaps. The preparation method and application of the negative electrode material of the carbonized layer. Background technique [0002] Elemental silicon nanowire is a one-dimensional nanostructure material with excellent flexibility. It is an excellent composite material additive and a one-dimensional wide bandgap semiconductor material. It has important applications in the fields of nanoelectronic devices and optical devices. [0003] The output of cotton-like elemental silicon nanocoils produced by Taizhou Jinbo Superconducting Nanomaterial Technology Co., Ltd. used in the present invention has reached an annual production cap...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/583H01M4/62H01M10/0525B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01M4/366H01M4/386H01M4/583H01M4/625H01M10/0525Y02E60/10
Inventor 江永斌
Owner 江永斌
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products