A thick-film organic solar cell based on low-temperature preparation of thermal crystallization active layer and its preparation method
A solar cell and thermal crystallization technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficult film formation, achieve the effects of simplifying the preparation process, improving carrier mobility and crystallinity, and improving performance
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[0035] like figure 1 As shown, a thick-film organic solar cell based on low-temperature preparation of thermal crystallization active layer, the solar cell adopts an inverted structure, including a substrate layer 1, an ITO transparent conductive cathode layer 2 (ITO, English name) arranged in sequence from bottom to top Indium Tin Oxides (i.e. indium tin oxide), cathode buffer layer 3, photoactive layer 4, anode buffer layer 5, metal anode layer 6;
[0036] The photoactive layer 4 is a film structure formed by mixing electron donor materials, electron acceptor materials and organic insulating materials
[0037] in,
[0038] The weight percentage of the electron donor material is: 39-39.5%;
[0039] The weight percentage of the electron acceptor material is: 58-60%;
[0040] The weight percentage of the organic insulating material is: 0.5-3%.
[0041] Preferably, the organic insulating material is one or a mixture of two or more of polymethyl methacrylate, polystyrene, and...
specific Embodiment
[0058] Control group 1
[0059] 1. Clean the substrate composed of a transparent substrate layer 1 and an ITO transparent conductive cathode layer 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning;
[0060] 2. Spin-coat ZnO on the surface of the ITO transparent conductive cathode layer 2 (working parameters: speed 5000rpm, time 40s, thickness 15nm, the same below, no further explanation) to prepare the cathode buffer layer 3, and bake the formed film at low temperature (Working parameters: temperature 200°C, time 60min, the same below, no further explanation);
[0061] 3. Prepare PffBT4T-C by spin coating on the cathode buffer layer 3 8 C 12 :PC 71 BM (mass percentage 40%: 60%, the same below, no longer described) photoactive layer 4 (800rpm, 50s, 300nm);
[0062] 4. Spin-coat PEDOT:PSS solution on the surface of photoactive layer 4 to prepare anode buffer layer 5 (3000rpm, 60s, 30nm);
[0063] 5. Evaporating metal anode Ag (100nm) on the ...
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