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A space-limited solvent-assisted growth method for preparing organic-inorganic compound semiconductor single crystal thin films

An inorganic composite and single crystal thin film technology, which is applied in the direction of single crystal growth, crystal growth, semiconductor devices, etc., can solve the problems of difficult transportation in the grain boundary area, easy damage to the film and substrate, and unfavorable crystallization quality of the film. To avoid the short circuit problem of the device, improve the flatness, improve the effect of reducing the roughness

Active Publication Date: 2019-07-12
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method also has relatively prominent shortcomings: relatively complex equipment, anisotropic pressure not only easily destroys the film and substrate, but also easily causes complex residual stress in the film, which is not conducive to improving the crystallization quality of the film
In addition, due to the lack of a liquid environment, the transport of the grain boundary region is difficult, and the interface connectivity between the grains is poor (the grain boundary region is mainly composed of amorphous state), which is not conducive to carrier transport.

Method used

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  • A space-limited solvent-assisted growth method for preparing organic-inorganic compound semiconductor single crystal thin films
  • A space-limited solvent-assisted growth method for preparing organic-inorganic compound semiconductor single crystal thin films
  • A space-limited solvent-assisted growth method for preparing organic-inorganic compound semiconductor single crystal thin films

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Experimental program
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Effect test

Embodiment 1

[0054] Embodiment 1: a spatially confined solvent-assisted growth method for preparing an organic-inorganic composite semiconductor single crystal thin film, comprising the following steps:

[0055] (1) CH prepared by conventional spin coating method 3 NH 3 PbI 3 The composite semiconductor polycrystalline film is placed in a closed container filled with cyclohexane saturated steam for 0.5 hours, so that the whole film can evenly absorb the solvent vapor;

[0056] (2) Closely attach the polished silicon wafer with clean surface to the surface of the film, and then wrap and seal them with PTFE film;

[0057] (3) place the above-mentioned sealed sample in the autoclave, then fill the autoclave with dimethyl silicone oil, and seal;

[0058] (4) A constant high pressure of 200MPa is applied on the autoclave, and then the temperature of the autoclave is raised to 120°C and kept constant for 48 hours;

[0059] (5) After the above process is finished, under the condition that the...

Embodiment 2

[0072]Example 2: A space-limited solvent-assisted growth method for preparing organic-inorganic composite semiconductor single crystal thin films, the operation steps are the same as those in Example 1, the difference is: the solvent cyclohexane used is replaced by isopropanol, more The time of adsorbing the solvent vapor by the crystal film is 1 hour, the polished cover sheet is changed to polished quartz sheet, the heat and pressure transfer medium is ethylene glycol, the hot-pressing pressure is 200MPa, the hot-pressing temperature is 200°C, and the hot-pressing treatment time is For 10 hours, the cooling rate was 0.06°C / min.

Embodiment 3

[0073] Example 3: A space-limited solvent-assisted growth method for preparing organic-inorganic compound semiconductor single crystal thin films, the operation steps are the same as those in Example 1, the difference is that the compound semiconductor is replaced by CH 3 NH 3 PbI 3-X Cl X , the solvent cyclohexane used was replaced by DMF, the polycrystalline film adsorbed solvent vapor for 0.1 hour, the polishing cover was changed to a single gallium arsenide wafer, the flexible film used to coat the sample was gold foil, and the heat and pressure transfer medium was For the fluoride solution, the heat treatment pressure is 150MPa, the hot pressing temperature is 100°C, the heat treatment time is 50 hours, and the cooling rate is 0.2°C / min.

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Abstract

The invention relates to a spatially limited solvent-assisted growth method for preparing organic-inorganic composite semiconductor single crystal thin films. First, the organic-inorganic composite semiconductor polycrystalline film absorbs a certain amount of solvent vapor, and then the polished cover sheet is placed on the surface of the film. The polycrystalline film and cover sheet are wrapped with a flexible film and placed in a high-pressure autoclave. The autoclave is filled with liquid pressure and heat transfer medium and sealed, and heating is started after high pressure is applied to the autoclave. After being treated at constant temperature and pressure for a certain period of time, it is gradually cooled to room temperature, and the pressure is slowly released to obtain an organic-inorganic composite semiconductor single crystal film composed of large-sized, high-crystallinity grains with good grain interface bonding. The organic-inorganic composite semiconductor single crystal film prepared by the invention can be used to develop high-performance solar cells, electroluminescent devices, photosensitive detectors and other semiconductor optoelectronic functional devices, and has important applications in the fields of new energy technology, display equipment manufacturing, automatic control and other fields. Value.

Description

technical field [0001] The invention relates to a space-limited solvent-assisted growth method for preparing an organic-inorganic composite semiconductor single crystal thin film, and belongs to the technical field of new materials. Background technique [0002] Organic-inorganic compound semiconductors can simultaneously possess the high stability, high carrier mobility and high photoelectric conversion efficiency of inorganic semiconductors, a wide range of tunable band gaps, and the low cost, good processing properties, and rich structures and properties of organic semiconductors. The advantages of diversity and strong light absorption ability have attracted extensive attention in recent years. So far, organic-inorganic composite semiconductor materials have been widely used in high-performance photovoltaic devices, light-emitting devices, photodetection devices, field-effect devices and various sensing devices. On the other hand, a large number of research results have ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00C30B7/06H10K99/00
Inventor 廉刚付现伟董宁吕松赵天宇王琪珑崔得良
Owner SHANDONG UNIV