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A method of plasma edge cutting for diffusion-made crystalline silicon solar cells

A silicon solar cell and plasma technology, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effect of solving edge leakage, technical compatibility, and low cost

Active Publication Date: 2020-04-14
江西硅辰科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to propose a plasma edge cutting method for diffusion manufacturing of crystalline silicon solar cells, to better solve the edge leakage problem caused by the diffusion process of crystalline silicon solar cells, and to support the diffusion technology route that separates the deposition diffusion source from the diffusion step Better edge cutting technology

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Adopt plasma-assisted chemical vapor deposition method with silane: borane flow ratio is the ratio of 1:0.1, on the good n-type polysilicon sheet surface deposition layer thickness that cleans texture is the amorphous silicon thin film of 30 nanometers as diffusion source; Then again Heat treatment at 950°C for 1 hour in a clean air atmosphere; use HF to remove the oxide layer on the surface of the silicon wafer after taking it out; Deposit a layer of amorphous silicon layer with a thickness of 20nm on one side; stack the deposited silicon wafers together and put them into a plasma etching machine, etch off the thickness of about 1 micron at the edge; then put the silicon wafers into the tube During the heat treatment, anneal at 840°C for 20 minutes in a clean air atmosphere; put the silicon wafer into the HF solution to remove the oxide layer on the surface of the silicon wafer; carry out the subsequent deposition of the passivation anti-reflection layer on both surface...

Embodiment 2

[0016] Adopting plasma-assisted chemical vapor deposition method with silane: borane flow ratio is the ratio of 1:0.06, on the n-type monocrystalline silicon chip surface that cleans fine texture deposits a layer of thickness and is the amorphous silicon thin film of 50 nanometers as diffusion source; Then heat treatment at 950°C for 1 hour in a clean air atmosphere; after taking it out, use HF to remove the oxide layer on the surface of the silicon wafer; A layer of amorphous silicon with a thickness of 30nm of phosphorus atoms is deposited on the side of the silicon that has not been expanded with boron; the deposited silicon wafers are stacked together and placed in a plasma etching machine, and the thickness of the edge is etched about 10 microns; then the silicon The wafer is put into the tube heat treatment and annealed at 840°C for 20 minutes in a clean air atmosphere; the silicon wafer is immersed in the HF solution to remove the oxide layer on the silicon wafer surface...

Embodiment 3

[0018] Deposit a layer of amorphous silicon layer with a thickness of 50nm on the surface of p-type polysilicon that has been cleaned by texturing with a ratio of silane: phosphine flow ratio of 1:0.01 by hot wire chemical vapor deposition; stack the deposited silicon wafers on the Put them together in a plasma etching machine to etch away a thickness of about 500 nanometers at the edge; then put the silicon wafer into a tubular heat treatment and anneal at 820°C for 30 minutes in a clean air atmosphere; put the silicon wafer into the HF solution Remove the oxide layer on the surface of the silicon wafer; then perform chemical etching and polishing on the back of the silicon wafer, and then proceed to the deposition of the passivation anti-reflection layer on both surfaces of the silicon wafer and the printing and sintering of the silver grid line and the aluminum back field on the back. Finally, a p-type PERC structure monocrystalline silicon solar cell was obtained.

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Abstract

A plasma edge cutting method used for a diffusion junction forming crystalline silicon solar cell is disclosed. The method is characterized by after carrying out deposition on a diffusion source layer, carrying out plasma edge cutting; and then, carrying out high temperature diffusion. A problem that crystalline silicon solar cell diffusion junction forming is easy to cause edge electric leakage is solved. In the invention, a method of depositing a solid state source and then carrying out high temperature diffusion is combined, and the method is suitable for n-type monocrystalline silicon or polycrystalline silicon PERT solar cell manufacturing and can be also used for phosphorus expansion, boron expansion and the like of p-type monocrystalline silicon or polycrystalline silicon. During anedge cutting process, a diffused silicon wafer only needs to adopt a conventional HF acid solution to conveniently remove a diffusion source layer becoming an oxide layer, which includes an oxide layer of a side edge. An edge electric leakage problem is thoroughly solved. The method is compatible with an existing crystalline silicon production line technology and cost is low.

Description

technical field [0001] The invention belongs to the field of solar cells and semiconductor devices. It involves the preparation technology of solar cells. Background technique [0002] In the production of crystalline silicon solar cells prepared by the diffusion method, in order to reduce the leakage of crystalline silicon solar cells during use, it is generally necessary to "cut the edge", that is, to etch the edge of the crystalline silicon wafer to a certain thickness, or use a laser to cut the silicon wafer Cut off a part of the edge, which can isolate the short-circuit leakage between the silicon film layers of different doping types on the front and rear surfaces of the silicon wafer. However, in the current technical solution, this scribing step is performed at a certain process node after the silicon wafer diffusion process is completed. Among them, laser edge trimming is generally used after the solar cell is completely completed. This method will cause a part of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L31/18
CPCH01L21/3065H01L31/1804H01L31/1876Y02E10/547Y02P70/50
Inventor 黄海宾周浪刘翠翠
Owner 江西硅辰科技有限公司
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