Preparation method for nanoscale negative structure with high depth-to-width ratio and high conformality

A high-aspect-ratio, nanoscale technology, applied in the field of optics and biology, can solve the problems that conformal filling cannot be satisfied, it is difficult to ensure the preparation of high-aspect-ratio and high-conformity nanoscale negative structure, and achieve low surface roughness, The effect of small structural stress

Inactive Publication Date: 2018-03-30
HUNAN UNIV
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcomings in the prior art that evaporation cannot satisfy conformal filling, and the directionality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for nanoscale negative structure with high depth-to-width ratio and high conformality
  • Preparation method for nanoscale negative structure with high depth-to-width ratio and high conformality
  • Preparation method for nanoscale negative structure with high depth-to-width ratio and high conformality

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0038] (1) Provide a substrate: select a single crystal silicon substrate, and first use acetone to ultrasonically clean it for 300 seconds, then use isopropanol to ultrasonically clean it for 300 seconds, and blow it dry with nitrogen.

[0039] As shown in Figure (1), first drop 6% HSQ on the substrate and spin coat it at 4000r / s for 60s.

[0040] As shown in the effect diagram in Figure (2), the electron beam exposure equipment Raith 150two is used to expose HSQ at a fixed point with a high voltage of 30KV and a 30μm aperture, and the exposed film is developed in a sodium hydroxide developer for 60s, and then used Rinse with IPA for 60 s and blow dry with nitrogen.

[0041] As shown in Figure (3), magnetron sputtering was used to sputter and coat the film for 280 seconds under the conditions of bias voltage 80V, current 0.8A, and va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method for a nanoscale negative structure with high depth-to-width ratio and high conformality. The preparation method comprises the following steps: spin-coatinga layer of hydrogen silsesquioxane (HSQ) onto a provided substrate by using a spin-coating process; subjecting a sample to exposing and developing by utilizing an electron beam exposure technology soas to obtain an expected HSQ columnar nanostructure; conformally depositing a layer of a functional material film onto the sample by utilizing a magnetron sputtering film-coating deposition technology; spin-coating a planarized layer of HSQ onto the magnetron-sputtered sample by utilizing a spin-coating manner; then placing the sample onto a hot plate, and carrying out baking at a low temperatureso as to remove a solvent in a planarized material; subjecting the sample to polishing treatment with an included angle less than 10 degrees by utilizing a beveling ion beam polishing device until ametal material on the upper surface of an HSQ column is completely removed; and treating the sample with hydrofluoric acid through wet etching for removal of an HSQ columnar structure so as to obtaina nanoscale negative structure with high depth-to-width ratio and high conformality required by the invention.

Description

Technical field: [0001] The invention relates to a preparation method of a nanoscale negative structure with high aspect ratio and high conformal shape, which can be used in the fields of optics and biology. Background technique: [0002] High aspect ratio and high conformal nanoscale negative structure arrays based on surface plasmon resonance have broad application prospects in super-transmission in the optical field, DNA detection in the field of chemical biology, and molecular filtration. [0003] There are three main methods for the preparation of traditional nanoscale negative structures: one is to expose and develop columnar nanostructures on negative photoresists, evaporate functional materials, etch to remove the photoresist, thereby transferring the columnar structure of the photoresist The porous structure of the functional material; the second is to expose and develop the positive photoresist to prepare the porous nanostructure, and then use the etching method to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B82B3/00B82Y5/00B82Y20/00B82Y40/00
CPCB82B3/0009B82Y5/00B82Y20/00B82Y40/00
Inventor 段辉高刘卿陈艺勤
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap