Preparation method for nanoscale negative structure with high depth-to-width ratio and high conformality

Abstract

The invention discloses a preparation method for a nanoscale negative structure with high depth-to-width ratio and high conformality. The preparation method comprises the following steps: spin-coatinga layer of hydrogen silsesquioxane (HSQ) onto a provided substrate by using a spin-coating process; subjecting a sample to exposing and developing by utilizing an electron beam exposure technology soas to obtain an expected HSQ columnar nanostructure; conformally depositing a layer of a functional material film onto the sample by utilizing a magnetron sputtering film-coating deposition technology; spin-coating a planarized layer of HSQ onto the magnetron-sputtered sample by utilizing a spin-coating manner; then placing the sample onto a hot plate, and carrying out baking at a low temperatureso as to remove a solvent in a planarized material; subjecting the sample to polishing treatment with an included angle less than 10 degrees by utilizing a beveling ion beam polishing device until ametal material on the upper surface of an HSQ column is completely removed; and treating the sample with hydrofluoric acid through wet etching for removal of an HSQ columnar structure so as to obtaina nanoscale negative structure with high depth-to-width ratio and high conformality required by the invention.

Description

Technical field: [0001] The invention relates to a preparation method of a nanoscale negative structure with high aspect ratio and high conformal shape, which can be used in the fields of optics and biology. Background technique: [0002] High aspect ratio and high conformal nanoscale negative structure arrays based on surface plasmon resonance have broad application prospects in super-transmission in the optical field, DNA detection in the field of chemical biology, and molecular filtration. [0003] There are three main methods for the preparation of traditional nanoscale negative structures: one is to expose and develop columnar nanostructures on negative photoresists, evaporate functional materials, etch to remove the photoresist, thereby transferring the columnar structure of the photoresist The porous structure of the functional material; the second is to expose and develop the positive photoresist to prepare the porous nanostructure, and then use the etching method to...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcomings in the prior art that evaporation cannot satisfy conformal filling, and the directionality and selectivity of etching during the etching process make it difficult to ensure the preparation of high aspect ratio and high conformal nanoscale negative structures.

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