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Preparation method of cuse compound rotating target

A technology of rotating target and compound, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of high cost, uneven density, material utilization rate not exceeding 40%, etc., and achieve low production cost , The effect of uniform internal density and high production efficiency

Active Publication Date: 2020-09-01
BAOTOU RES INST OF RARE EARTHS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the method of preparing CuSe targets is expensive, the density is relatively not uniform, and the material utilization rate does not exceed 40%.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] The preparation method of the CuSe compound rotating target material, the specific steps are as follows:

[0023] Step 1: Select non-magnetic pipe as the substrate;

[0024] The non-magnetic pipes are made of non-magnetic stainless steel pipes, metal copper pipes, metal titanium pipes, nickel-chromium pipes, and nickel-aluminum pipes. The non-magnetic pipes are processed to meet the requirements of use. Sandblasting, cleaning, drying and other pretreatments are carried out.

[0025] Step 2: Use supersonic cold spraying technology to spray CuSe powder on the outer surface of the pretreated substrate, and the thickness of the deposited layer does not exceed 20mm; then use cold isostatic pressing technology to further increase the density under ultra-high pressure;

[0026] Under the protective atmosphere of helium or nitrogen, the CuSe powder is sent to the supersonic cold spray technology gun through the powder feeding device, and the high-speed airflow sprays the CuSe ...

Embodiment 1

[0032] A method for preparing a CuSe compound rotating target, specifically comprising the steps of:

[0033] (1) Prepare a non-magnetic stainless steel tube, the size of which is processed to meet the requirements of use, and the two ends are processed into screw buckles for connection as required, and the surface is pretreated by sandblasting, cleaning, drying, etc.; CuSe powder below 1 μm sieve out spare;

[0034] (2) Under the nitrogen protective atmosphere, the powder feeding device sends the CuSe powder to the supersonic cold spray technology gun. When the non-magnetic stainless steel tube keeps rotating, the high-speed airflow sprays the CuSe powder layer by layer on the substrate in a scanning manner. Surface, each layer 2μm, until CuSe layer accumulation reaches 7mm, cool to room temperature, wherein, the gas pressure at the inlet of the cold spraying is 2MPa, the gas temperature is 100°C; the working gas is heated to 200°C, pressurized to 3MPa; the spray distance is ...

Embodiment 2

[0039] A method for preparing a CuSe compound rotating target, specifically comprising the steps of:

[0040] (1) Prepare metal copper pipes, the size of which is processed to meet the requirements of use, and the two ends are processed into connection screws as required, and the surface is pretreated by sandblasting, cleaning, drying, etc.; sieve the CuSe powder below 1 μm In addition to spare;

[0041] (2) Under the protective atmosphere of helium, the powder feeding device sends the CuSe powder to the supersonic cold spray technology gun. When the metal copper tube keeps rotating, the high-speed airflow sprays the CuSe powder layer by layer on the substrate in a scanning manner. Surface, each layer is 4μm, until the accumulation of CuSe layer reaches 11mm, cool to room temperature, wherein, the gas pressure at the inlet of cold spraying is 3MPa, the gas temperature is 150℃; the working gas is heated to 200℃, pressurized to 4MPa; the spray distance is 30 ~55mm;

[0042] (3...

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Abstract

The invention discloses a CuSe compound rotating target preparation method. The CuSe compound rotating target preparation method comprises the steps that a non-magnetic pipe is selected as a substrate; CuSe powder is sprayed onto the outer surface of the pretreated substrate through an supersonic cold spraying technology, and the thickness of a deposited layer is not larger than 20 mm; the densityis further improved at ultrahigh pressure through an isostatic cool pressing technology; and a rotating target blank of the corresponding organization structure is obtained through high-temperature sintering, and a rotating target is obtained through machining. The CuSe compound rotating target obtained through the method is uniform in inner density, good plating film forming is facilitated, andthe defective percentage of solar energy products is decreased.

Description

technical field [0001] The invention relates to a photoelectric material technology, in particular to a method for preparing a CuSe compound rotary target. Background technique [0002] After nearly 20 years of development, solar cells have developed from silicon crystal systems to compound thin films. The light conversion efficiency of the silicon crystal system has reached more than 17% at present, but its manufacturing cost is high. In the early stage, the whole industry consumed a lot of energy due to the preparation of polysilicon and single crystal silicon, which had a great impact on the environment. In order to make better use of solar energy, Cu-In-Ga-Se compound thin film solar cells with lower manufacturing cost, relatively less energy consumption and mass production have been developed. [0003] In the preparation process of Cu-In-Ga-Se compound thin-film solar cells, CuSe compound is used as one of the targets for magnetron sputtering coating, which makes the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C24/04
CPCC23C14/3414C23C24/04
Inventor 孙良成鲁飞刘小鱼李静雅李慧刘树峰娄树普温永清
Owner BAOTOU RES INST OF RARE EARTHS
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