Silicon carbide linear temperature sensor, temperature measuring method thereof and manufacturing method thereof

Abstract

The invention relates to a silicon carbide linear temperature sensor, a temperature measuring method thereof and a manufacturing method thereof and belongs to the technical field of semiconductor devices. The silicon carbide linear temperature sensor comprises a P well at the top layer of a silicon carbide N-epitaxial layer, an N well with a shallower central junction depth at the top of the P well, an N-type silicon carbide ohmic contact region at the center of the N well, an Ohmic contact electrode at the upper surface of the N-type silicon carbide ohmic contact region, N-type Schottky contact electrodes at two ends of the N well and a passivation layer at the surface of a device. According to the silicon carbide linear temperature sensor, the temperature measuring method and the manufacturing method, a lateral design is adopted to obtain the silicon carbide temperature sensor based on double Schottky diode structures, on one hand, the influence of reverse saturation current on the linearity of the sensor can be eliminated, the linearity is improved, on the other hand, a linear dependence relation between diffusion resistance Rs and temperature is introduced, and the sensitivityof the device is improved. At the same time, the device structure provided by the invention is a lateral structure, compared with an existing longitudinal structure, the structure of the invention iseasy to integrate, due to the isolation effect of the P well, the crosstalk between sensor main devices can be reduced, and the feasibility of integration with N-type epitaxial power devices is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a silicon carbide linear temperature sensor, a temperature measuring method and a manufacturing method thereof. Background technique [0002] Wide bandgap semiconductor material—silicon carbide (SiC) is an ideal material for preparing high-voltage power electronic devices. Compared with Si materials, SiC materials have a higher breakdown electric field strength (4×10 6 V / cm), high carrier saturation drift velocity (2×10 7 cm / s), high thermal conductivity, and good thermal stability, so it is especially suitable for high-power, high-pressure, high-temperature and radiation-resistant electronic devices. [0003] SiC VDMOS devices are more commonly used in SiC power devices. Compared with bipolar devices, SiC VDMOS devices have better frequency characteristics and lower switching losses because they have no charge storage effect. At the same time, the wide bandgap of...

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Problems solved by technology

[0015] The technical problem to be solved by the present invention is to provide a silicon carbide temperature sensor with a dual Schottky diode structure for the low sensitivity of the silicon carbide temperature sensor for temperature monitoring and serious crosstalk with the main device. Introducing the diffusion resistance R s The linear dependence with temperature improves the sensitivity of the device; at the same time, the device structure proposed by the present invention is a horizontal structure, which is easier to integrate than the existing vertical structure

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