Silicon carbide linear temperature sensor, temperature measuring method thereof and manufacturing method thereof

A technology of temperature sensor and silicon carbide, which is applied in thermometers, thermometers and instruments with directly heat-sensitive electric/magnetic components, can solve the problems of integrated crosstalk and low sensitivity of the main device, and reduce crosstalk, improve sensitivity, The effect of a large temperature range

Active Publication Date: 2018-04-24
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The technical problem to be solved by the present invention is to provide a silicon carbide temperature sensor with a dual Schottky diode structure for the low sensitivity of the silicon carbide temperature sensor for temperature monitoring and serious crosstalk with the main devic

Method used

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  • Silicon carbide linear temperature sensor, temperature measuring method thereof and manufacturing method thereof
  • Silicon carbide linear temperature sensor, temperature measuring method thereof and manufacturing method thereof
  • Silicon carbide linear temperature sensor, temperature measuring method thereof and manufacturing method thereof

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Example Embodiment

[0060] Example 1:

[0061] Such as figure 1 The SiC SBD temperature sensor with a traditional longitudinal structure is shown. In order to compare its performance with the temperature sensor of the present invention, this embodiment adopts the same doping level to fabricate a longitudinal SiC SBD temperature sensor, which is specifically as follows: silicon carbide N-epitaxial layer The doping concentration of 2 is 2E17cm -3 Yes, the thickness of the silicon carbide N-epitaxial layer 2 is 10 microns, the metal Ti / Al alloy is used as the Schottky contact electrode 8, and the metal Ni is used as the ohmic contact electrode 7.

[0062] This embodiment adopts TCAD software Silvaco to build as figure 1 In order to obtain its VT characteristic curve, the Schottky contact electrode 8 is biased with a constant current of 5E-6A, 1E-5A, and 2E-5A. When the current through the SBD is constant, the The forward pressure drop on the turkey barrier will change linearly with temperature. Using t...

Example Embodiment

[0063] Example 2:

[0064] Such as image 3 Shown is a SiC PN junction temperature sensor with a traditional longitudinal structure. In order to compare its performance with the temperature sensor of the present invention, this embodiment uses the same doping level to fabricate a longitudinal SiC PN temperature sensor, which is specifically as follows: silicon carbide N-epitaxial The doping concentration of layer 2 is 2E17cm -3 The thickness of the silicon carbide N-epitaxial layer 2 is 10 microns, the metal Al is used as the Schottky contact electrode 8, the metal Ni is used as the ohmic contact electrode 7, and the doping concentration of the P-well region 3 is 2E17cm -3 , The thickness of the P-well region 3 is 2 microns.

[0065] This embodiment adopts TCAD software Silvaco to build as image 3 In order to obtain its VT characteristic curve, the ohmic contact electrode 7 is biased with a constant current of 5E-5A, 1E-4A, and 2E-4A. When the current through the PN junction is con...

Example Embodiment

[0066] Example 3:

[0067] Such as Figure 5 Shown is a specific embodiment of a SiC temperature sensor with a lateral double SBD structure provided by the present invention, which is characterized in that it includes a silicon carbide N+ substrate 1, and the silicon carbide N+ substrate 1 has a silicon carbide N - Epitaxial layer 2, the silicon carbide N - The epitaxial layer 2 has a P-well region 3 in the center of the top layer, and the P-well region 3 has an N-well region 4 in the center of the top layer. The N-well region 4 has an N-type silicon carbide ohmic contact region 5 in the middle of the top layer, and the N-type silicon carbide ohmic contact An ohmic contact electrode 7 connected to it is arranged above the region 5, and two Schottky contact electrodes 8 connected to it and symmetrically arranged above both ends of the top layer of the N-well region 4, two Schottky contact electrodes 8 and The three ohmic contact electrodes 7 are independent of each other, and the s...

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Abstract

The invention relates to a silicon carbide linear temperature sensor, a temperature measuring method thereof and a manufacturing method thereof and belongs to the technical field of semiconductor devices. The silicon carbide linear temperature sensor comprises a P well at the top layer of a silicon carbide N-epitaxial layer, an N well with a shallower central junction depth at the top of the P well, an N-type silicon carbide ohmic contact region at the center of the N well, an Ohmic contact electrode at the upper surface of the N-type silicon carbide ohmic contact region, N-type Schottky contact electrodes at two ends of the N well and a passivation layer at the surface of a device. According to the silicon carbide linear temperature sensor, the temperature measuring method and the manufacturing method, a lateral design is adopted to obtain the silicon carbide temperature sensor based on double Schottky diode structures, on one hand, the influence of reverse saturation current on the linearity of the sensor can be eliminated, the linearity is improved, on the other hand, a linear dependence relation between diffusion resistance Rs and temperature is introduced, and the sensitivityof the device is improved. At the same time, the device structure provided by the invention is a lateral structure, compared with an existing longitudinal structure, the structure of the invention iseasy to integrate, due to the isolation effect of the P well, the crosstalk between sensor main devices can be reduced, and the feasibility of integration with N-type epitaxial power devices is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a silicon carbide linear temperature sensor, a temperature measuring method and a manufacturing method thereof. Background technique [0002] Wide bandgap semiconductor material—silicon carbide (SiC) is an ideal material for preparing high-voltage power electronic devices. Compared with Si materials, SiC materials have a higher breakdown electric field strength (4×10 6 V / cm), high carrier saturation drift velocity (2×10 7 cm / s), high thermal conductivity, and good thermal stability, so it is especially suitable for high-power, high-pressure, high-temperature and radiation-resistant electronic devices. [0003] SiC VDMOS devices are more commonly used in SiC power devices. Compared with bipolar devices, SiC VDMOS devices have better frequency characteristics and lower switching losses because they have no charge storage effect. At the same time, the wide bandgap of...

Claims

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Application Information

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IPC IPC(8): G01K7/01H01L29/47H01L29/872
CPCG01K7/015H01L29/47H01L29/872
Inventor 张有润顾航陈航路统霄胡刚毅李俊焘张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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