Method for preparing flexible hafnium oxide-based ferroelectric film

A ferroelectric thin film, hafnium oxide technology, applied in the manufacture/processing of electromagnetic devices, circuits, electrical components, etc., can solve the problems that hinder wide application, low tensile strength, expensive price, etc., to speed up development and application, excellent The effect of ferroelectric properties

Inactive Publication Date: 2018-05-15
XIANGTAN UNIV
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The commonly used flexible ferroelectric film substrates are: 1) Polyethylene terephthalate (PET), which is widely used because of its light transmission, bendability and low price, but because it does not have The disadvantage of high temperature resistance, so it is not suitable for the growth of traditional ferroelectric materials that require high temperature preparation. Therefore, this kind of substrate is limited to the growth of organic ferroelectric materials
2) Ultra-thin flexible glass, which is selected as a common substrate for the pr

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The method for preparing a flexible hafnium oxide-based ferroelectric film on an SRO electrode by a sol-gel method is characterized in that it comprises the following steps:

[0041] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet The thickness is less than 505m (radius of curvature ≤ 2.5mm); then a layer of CFO is prepared on the upper single crystal flexible mica sheet by laser pulse deposition method as a buffer layer and seed layer, and then a layer of SRO consistent with the structure of the ferroelectric material is grown on the CFO, Among them, the thickness of CFO is 5nm, and the thickness of SRO is 30nm;

[0042] 1.2 Precursor solution of HZO (mass ratio: Hf:Zr=50:50) ferroelectric film prepared by sol-gel method: a. Calcula...

Embodiment 2

[0048] The method for preparing a flexible hafnium oxide-based ferroelectric film on a TiN electrode by a sol-gel method is characterized in that it comprises the following steps:

[0049] 1.1 Preparation of single crystal mica sheet and preparation of bottom electrode: choose a smooth and crack-free natural mica sheet, then stick the natural mica sheet on the operating table, and tear it off layer by layer with pointed tweezers until the single crystal flexible mica sheet Thickness is less than 505m (radius of curvature ≤ 2.5mm); then grow a 30nm TiN bottom electrode directly on the mica substrate by magnetron sputtering;

[0050] 1.2 Precursor solution of HZO (mass ratio: Hf:Zr=50:50) ferroelectric film prepared by sol-gel method: a. Calculate zirconium nitrate and acetylacetone needed for zirconium-doped hafnium oxide ferroelectric film The quality of hafnium, zirconium doping molar weight is 50%; b. the zirconium nitrate weighed is dissolved in acetylacetone, stirs until i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a flexible hafnium oxide-based ferroelectric film. The method comprises the following steps: 1) preparing a TiN bottom electrode on a monocrystalline flexible mica sheet by adopting magnetron sputtering or preparing a perovskite structure oxide SRO bottom electrode by adopting a pulsed laser deposition method; 2) preparing a precursor solution of theferroelectric film by adopting a sol-gel method, wherein the concentration of the precursor solution is 0.01-0.05mol/L, and the ferroelectric film material is selected from any one of zirconium-dopedhafnium oxide and yttrium-doped hafnium oxide; 3) preparing the hafnium oxide-based ferroelectric film, namely performing spin-coating on the precursor solution on the SRO or TiN bottom electrode by adopting a spin-coating method so as to obtain a uniform wet film; 4) performing drying, pyrolysis and annealing treatment on the prepared uniform wet film; and 5) repeating the steps 3) to 4) for several times, thereby obtaining the target flexible hafnium oxide-based ferroelectric film.

Description

technical field [0001] The invention relates to the technical field of ferroelectric thin film and device preparation, in particular to a method for preparing a flexible ferroelectric thin film. Background technique [0002] With the rapid progress and development of society, people's demand for electronic products is getting higher and higher, and flexible devices are widely used in information, medical, energy and It has broad application prospects in national defense and other aspects. In recent years, flexible electronic devices have represented a direction of semiconductor development in the new belt. As an important development trend of semiconductors in the future, flexible electronic devices have received high attention at home and abroad. With the rapid development of some large-area electronic products such as sensors, actuators and displays, people's requirements for these devices are increasingly thinner and lighter. It is necessary to fabricate these products ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L43/12H01L21/822
CPCH01L21/822H10N50/01
Inventor 姜杰周益春涂楠英彭强祥
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap