Method for preparing flexible hafnium oxide-based ferroelectric film

Abstract

The invention discloses a method for preparing a flexible hafnium oxide-based ferroelectric film. The method comprises the following steps: 1) preparing a TiN bottom electrode on a monocrystalline flexible mica sheet by adopting magnetron sputtering or preparing a perovskite structure oxide SRO bottom electrode by adopting a pulsed laser deposition method; 2) preparing a precursor solution of theferroelectric film by adopting a sol-gel method, wherein the concentration of the precursor solution is 0.01-0.05mol / L, and the ferroelectric film material is selected from any one of zirconium-dopedhafnium oxide and yttrium-doped hafnium oxide; 3) preparing the hafnium oxide-based ferroelectric film, namely performing spin-coating on the precursor solution on the SRO or TiN bottom electrode by adopting a spin-coating method so as to obtain a uniform wet film; 4) performing drying, pyrolysis and annealing treatment on the prepared uniform wet film; and 5) repeating the steps 3) to 4) for several times, thereby obtaining the target flexible hafnium oxide-based ferroelectric film.

Description

technical field [0001] The invention relates to the technical field of ferroelectric thin film and device preparation, in particular to a method for preparing a flexible ferroelectric thin film. Background technique [0002] With the rapid progress and development of society, people's demand for electronic products is getting higher and higher, and flexible devices are widely used in information, medical, energy and It has broad application prospects in national defense and other aspects. In recent years, flexible electronic devices have represented a direction of semiconductor development in the new belt. As an important development trend of semiconductors in the future, flexible electronic devices have received high attention at home and abroad. With the rapid development of some large-area electronic products such as sensors, actuators and displays, people's requirements for these devices are increasingly thinner and lighter. It is necessary to fabricate these products ...

AI Technical Summary

Problems solved by technology

The commonly used flexible ferroelectric film substrates are: 1) Polyethylene terephthalate (PET), which is widely used because of its light transmission, bendability and low price, but because it does not have The disadvantage of high temperature resistance, so it is not suitable for the growth of traditional ferroelectric materials that require high temperature preparation. Therefore, this kind of substrate is limited to the growth of organic ferroelectric materials

2) Ultra-thin flexible glass, which is selected as a common substrate for the preparation of high-temperature ferroelectric materials due to its superior light transmission, smooth surface (0.2-0.3nm), bendability, and high temperature resistance (650 °C) , but the low tensile strength (33MPa) and high price of ultra-thin glass hinder its wide application

The PZT film with larger remanent polarization is a lead-containing material. For the traditional perovskite film lead zirconate titanate (PZT) film, the lead-based material will cause harm to human health and ecology during production, use and disposal. environmental damage