Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoresist for gpp process, preparation method and photolithography process thereof

A photoresist and process technology, applied in the fields of photoresist, photolithography process and preparation, to achieve the effects of strong corrosion ability, improved production environment and good repeatability

Active Publication Date: 2021-02-12
SUNTIFIC MATERIALS WEIFANG LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when baking in an oven during the photolithography process, the solvent that evaporates into high-temperature airtight conditions has a certain risk of explosion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist for gpp process, preparation method and photolithography process thereof
  • Photoresist for gpp process, preparation method and photolithography process thereof
  • Photoresist for gpp process, preparation method and photolithography process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The composition of the photoresist of the present embodiment is:

[0050] Bisphenol type epoxy resin (structural formula is as follows) 3.6g, triphenylsulfonium hexafluoroantimonate 0.4g, propylene glycol monomethyl ether acetate 5.45g.

[0051]

[0052] Wherein, in the structural formula of the bisphenol epoxy resin, n=15-20.

[0053] The specific steps of the preparation method of the photoresist are as follows: the above-mentioned components are mixed, fully dissolved, and then filtered through a filter with a pore size of 0.2 μm to obtain the photoresist.

[0054]The specific steps of the photolithography process of the photoresist are as follows: spin-coat the above-mentioned photoresist on the purified silicon wafer substrate, and pre-bake it with a hot plate, and pre-bake it at 110 ° C for 120s; adjust the rotation speed of the spin coating to make the dried The thickness of the photoresist film is 5.0 μm, through the mask, through the exposure machine i-ray ...

Embodiment 2

[0056] Bisphenol type epoxy resin (structural formula is as follows) 5.2g, diphenyl iodine hexafluorophosphate 1.3g, propylene glycol monomethyl ether acetate 6.15g.

[0057]

[0058] Wherein, in the structural formula of the bisphenol epoxy resin, n=15-20.

[0059] The specific steps of the preparation method of the photoresist are as follows: the above-mentioned components are mixed, fully dissolved, and then filtered through a filter with a pore size of 0.2 μm to obtain the photoresist.

[0060] The specific steps of the photolithography process of the photoresist are as follows: spin-coat the above-mentioned photoresist on the purified silicon wafer substrate, and pre-bake it with a hot plate, and pre-bake it at 110 ° C for 180s; adjust the rotation speed of the spin coating to make the dried The thickness of the photoresist film is 7.5 μm, through the mask, through the exposure machine i-ray ultraviolet light exposure, the exposure dose is 80mJ / cm 2 , the photoresist ...

Embodiment 3

[0062] Bisphenol type epoxy resin (structural formula is as follows) 6.7g, triphenylsulfonium hexafluoroantimonate 1.9g, propylene glycol monomethyl ether acetate 6.83g.

[0063]

[0064] Wherein, n=7-10 in the structural formula of the bisphenol epoxy resin.

[0065] The specific steps of the preparation method of the photoresist are as follows: the above-mentioned components are mixed, fully dissolved, and then filtered through a filter with a pore size of 0.2 μm to obtain the photoresist.

[0066] The specific steps of the photolithography process of the photoresist are as follows: spin-coat the above-mentioned photoresist on the purified silicon wafer substrate, and pre-bake it with a hot plate, and pre-bake it at 110 ° C for 180s; adjust the rotation speed of the spin coating to make the dried The thickness of the photoresist film is 10 μm, through the mask, through the exposure machine i-ray ultraviolet light exposure, the exposure dose is 120mJ / cm 2 , the photoresis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of photoetching, in particular to photoresist for a GPP process and a preparation method and photoetching process of the photoresist. The photoresist for GPP is prepared mainly from main body resin, an acid production agent and a solvent, wherein the main body resin is epoxy resin, and the photoresist for the GPP process is mainly prepared from the following constituents based on percent by mass: 20-60% of main body resin, 4-30% of acid production agent and 35-70% of solvent. In the photoresist for the GPP process, the epoxy resin is crosslinked andcured under a light condition by the acid production agent to generate a compact mesh structure attached onto a substrate, the developing of a part which is not irradiated can be washed by a safe andnon-toxic organic solvent, a toxic solvent such as xylene is not needed to be employed, and the photoresist has the advantages of no toxicity and no environmental-friendly potential risk.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a photoresist for GPP technology, a preparation method and a photolithography technology thereof. Background technique [0002] Glass passivated silicon diode (GPP) chip is a planar etching tank process technology integrating semiconductor planar process, mesa process and glass sintering process. The general graphic design is square or regular hexagonal. The process sequence of chemical treatment is as follows: [0003] Fabrication of silicon diffusion sheet → first photolithography groove → first etching V-shaped groove table top → second photolithography groove → secondary etching V-shaped groove table top → growth of silicon dioxide film and cleaning treatment on V-shaped groove table top → coating glass powder →Baking glass powder and removing photoresist→Glass passivation→Surface corrosion cleaning→Metalized electrode→Third photolithography electrode→Chip segmentat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/038G03F7/004G03F7/20
CPCG03F7/004G03F7/038G03F7/2004
Inventor 孙逊运王安栋吴淑财于凯
Owner SUNTIFIC MATERIALS WEIFANG LTD