Vacuum infiltration preparation process for titanium-coated diamond/SiC composite material

A composite material and preparation technology, applied in metal processing equipment, coating, transportation and packaging, etc., can solve problems affecting the service life of the substrate, substrate damage, etc., to improve mechanical properties, enhance interface bonding, and use temperature range big effect

Inactive Publication Date: 2018-06-15
北京科技大学广州新材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the thermal expansion coefficient of the electronic packaging material is large, more stress will inevitably be formed between the substrate and the circuit board. Once the stress accumulates, it will cause damage to the substrate and even affect the service life of the substrate.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0027] Weigh 15g of diamond single crystal particles, soak in ethanol for 120min, and disperse with ultrasonic waves, then mix it with 3g of titanium powder, and grind it in a mortar for 60min, then move the mixture into a vacuum sintering furnace for sintering, and vacuumize to 1Pa, The temperature was set at 750° C. and the time was 45 minutes, thereby obtaining diamond powder coated with titanium on the surface. Then weigh 3g of silicon powder, 3g of graphite, and 2.2g of phenolic resin powder, soak them in absolute ethanol, heat and stir them into a paste, then add titanium-plated diamond powder, stir evenly, put them into a mixer and mix them. Material 20h, mixer speed 1000r / min. Afterwards, the mixture was taken out, washed with absolute ethanol and dried, and sieved with an 800-mesh sieve to obtain a mixture of uniform particle sizes. Then weigh 2g of the mixture powder and put it into a Φ15mm mold, press it into a porous green body at 60MPa100°C, put the porous green ...

example 2

[0029] Weigh 18g of diamond crushing powder and 3g of titanium powder, soak in ethanol for 60min, and then dry. Put the dried powder into a mortar and grind for 60 minutes, then put the mixed powder into a tube furnace, and sinter in an argon atmosphere at a temperature of 840°C for 60 minutes to obtain titanium-coated diamond particles. Then weigh 3.5g of polypropylene, dissolve it with acetone, then add 5g of silicon powder and 5g of graphite, mix and stir to form a paste. Then add titanium-coated diamond to the paste mixture, stir it evenly, put it into a ball mill jar, and perform ball milling on a planetary ball mill for 16 hours at a speed of 1500r / min. After the mixing is complete, take out the sample and clean the mixture with acetone , and then dried and sieved, the sieve is 1000 mesh, and the particle size and ingredients are uniformly mixed powder. Then weigh 2g of powder, put it into a mold of 10×25mm, and press it at 80°C and 60MPa to obtain a porous prefabricate...

example 3

[0031] Weigh 20g of diamond single crystal particles, soak them in acetone for 90min, and disperse them with ultrasound, then mix them with 4g of titanium powder, and grind them in a mortar for 60min, then move the mixture into a vacuum sintering furnace for sintering, vacuumize to 1Pa, the temperature Set it at 750°C for 45 minutes to obtain diamond powder coated with titanium on the surface. Mix phenolic resin and acetone solution, and heat it to dissolve completely, then mix silicon powder, titanium-plated diamond and graphite, and stir until it becomes a paste. Wherein the weight percentages of phenolic resin, silicon powder, titanium-coated diamond and graphite are 15%, 20%, 50% and 15% respectively. The mixture was then put into a ball mill tank, and mixed on a mixer at 1600r / min for 12 hours. After the mixing is completed, the ball mill tank is cleaned with acetone, and the obtained mixture is dried in an oven at 80° C., and then sieved with a 1000-mesh screen. Then t...

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Abstract

The invention relates to a vacuum infiltration preparation process for a titanium-coated diamond/SiC composite material, wherein interface bonding property between silicon and diamond in the compositematerial is strengthened in a mode of coating the diamond with titanium. The vacuum infiltration preparation process comprises the following steps of: mixing diamond and titanium powder in proportion, sintering and plating under vacuum or inert gas atmosphere to form a silicon carbide layer on a diamond surface, thereby preparing titanium-coated diamond particles; uniformly mixing titanium-coateddiamond, silicon powder, graphite and an organic binder to obtain a mixture, pressing the mixture into a porous preformed blank body which has a regular shape and is made of a composite material, degreasing the preformed blank body, and performing liquid silicon infiltration on the degreased porous blank body in a vacuum infiltration furnace for enabling the porous blank body to be completely compact. In the infiltration process, TiC reacts with Si to generate SiC and Ti2SIC3, so that formation of SIC is quickened while TiC is used as an intermediate phase in comparison with a mode that Si and diamond directly react to generate an interface phase of silicon carbide, generation difficulty of SiC is reduced and SiC content is increased; and moreover, integral strength of the material is improved through interface bonding, formed by chemical reaction, between diamond and silicon.

Description

technical field [0001] The invention relates to a diamond particle-reinforced composite material for electronic packaging, in particular to a vacuum infiltration preparation process of a titanium-coated diamond / SiC composite material. The diamond / SiC composite material prepared by this method is a new type of electronic packaging material with high density, high thermal conductivity and low thermal expansion, and has great market potential in the manufacture and production of integrated circuit substrates. Background technique [0002] Electronic packaging material is an essential material for integrated circuits, and it is mainly used as a preparation material for preparing circuit substrates. In addition to being a supporting material, it must release the heat generated by the element in multiple operations in a timely manner, so as to ensure the operating efficiency of the element and maintain the service life of the element. Diamond composite material is a new type of e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C26/00B22F3/10B22F3/11B22F1/00B22F7/00B22F9/04B22F3/26B22F1/02
CPCC22C1/058C22C26/00B22F3/1007B22F3/11B22F3/26B22F7/002B22F9/04B22F2009/041B22F1/102B22F1/17
Inventor 何新波郑伟吴茂林涛
Owner 北京科技大学广州新材料研究院
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