A kind of preparation method of aluminum-doped zinc oxide transparent conductive film

Abstract

The invention particularly relates to a preparation method of an aluminum-doped zinc oxide transparent conductive film. Compared with the prior art, Ga-doped sol A is not prone to acting with components in air during heat treatment so that the sol A can grow a transparent and uniform thin film layer on a substrate as a buffer layer of an aluminum-doped zinc oxide thin film layer, the transparencyis high, and in the thin film doped with Ga, the lattice constant of crystal is closer to the lattice constant of wurtzite ZnO, thus the lattice mismatch effect is effectively reduced and a good lattice buffering effect is achieved, and the aluminum-doped zinc oxide transparent conductive film with better photoelectric performance is prepared.

Description

technical field [0001] The invention relates to the field of conductive thin film materials, in particular to a method for preparing an aluminum-doped zinc oxide transparent conductive thin film. Background technique [0002] Transparent conducting oxide (TCO) thin films have high transmittance in the visible region due to their large energy band gap, while low resistivity makes them suitable for various applications such as chlorine, ozone and methane gas Sensors; flat panel, electronic paper, touch screen display; light-emitting diodes; thin-film solar cells, etc. At present, the transparent conductive film mainly used in the market is tin-doped indium oxide (ITO). ITO occupies the main market due to its excellent conductivity and light transmittance, and is mass-produced on an industrial scale. However, due to the scarcity of In element resources and the increasing market demand, the price of ITO has increased accordingly. At the same time, In element is toxic. With the ...

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Problems solved by technology

The traditional sol-gel method prepares transparent conductive films due to the stress and strain that are difficult to correct due to lattice mismatch and thermal expansion of the substrate, resulting in many defects in the crystal structure of film growth. The existence of tiny defects in materials in semiconductor electronic devices will Causes greater loss and adverse reactions to the device. For the AZO thin film prepared by the traditional sol-gel method, currently more scientific research content generally spin-coats AZO with the same aluminum doping concentration on the glass substrate. However, such AZO films often have a large number of crystal defects or cannot form a dense film microstructure due to lattice mismatch and thermal expansion of the substrate during the growth process. These defects are due to the substrate and AZO These defects in the AZO film will affect the electrical and optical properties of the AZO film, resulting in low reproducibility of the film performance and uneven film quality prepared by the traditional method. uneven

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