Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

A manufacturing method and a driving device technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, railway vehicles, etc., can solve the problem of carrier mobility decline, achieve the effect of reducing interface energy level density and improving performance

Active Publication Date: 2021-09-03
KK TOSHIBA
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, for example, when silicon carbide is used to form a MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal Oxide Semiconductor Field Effect Transistor), there is a problem that the mobility of carriers decreases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
  • Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
  • Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0027] The semiconductor device of the present embodiment includes: a silicon carbide layer; and a silicon oxide layer located on the silicon carbide layer and containing at least one of the group consisting of phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi). At least a part of at least one element is bonded to three oxygens through a single bond and bonded to one oxygen through a double bond.

[0028] figure 1 It is a schematic cross-sectional view showing a MOSFET which is the semiconductor device of the present embodiment. The MOSFET 100 is a double implantation MOSFET (Double Implantation MOSFET, DIMOSFET) in which a p-well and a source region are formed by ion implantation. In addition, MOSFET 100 is an n-channel MOSFET using electrons as carriers.

[0029] The MOSFET 100 includes a silicon carbide substrate 12, a drift layer 14 (silicon carbide layer), a p-well region 16 (silicon carbide layer), a source region 18, a p-well contact region 20, a silicon ox...

no. 2 Embodiment approach

[0132] In addition to the silicon oxide layer, the semiconductor device of this embodiment contains boron (B), aluminum (Al), gallium (Ga), scandium (Sc), yttrium (Y), and rare earths (La, Ce, Pr, Nd, Pm, Sm, Except for at least one element from the group of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), it is the same as the first embodiment. Hereinafter, the description of the content overlapping with the first embodiment will be omitted.

[0133] refer to figure 1 The MOSFET of this embodiment will be described. In the MOSFET of this embodiment, the silicon oxide layer 28 contains boron (B), aluminum (Al), gallium (Ga), scandium (Sc), yttrium (Y), and rare earths (La, Ce, Pr, Nd, Pm, Sm , Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) at least one element in the group (hereinafter also referred to as an additional element).

[0134] Figure 7 It is an explanatory diagram of the silicon oxide layer 28 of this embodiment. Figure 7 It is a diagram showing the bonding state of additional ...

no. 3 Embodiment approach

[0145] The semiconductor device of this embodiment differs from the first embodiment in that a termination region of the MOSFET is provided. The description of the contents overlapping with the first embodiment will be omitted.

[0146] Figure 9 It is a schematic cross-sectional view showing the structure of a MOSFET which is the semiconductor device of the present embodiment. MOSFET 200 includes an element region and a termination region provided around the element region. The termination region has a function of increasing the withstand voltage of MOSFET 200 .

[0147] In the element region, for example, the MOSFET 100 of the first embodiment is arranged as a unit cell (Unit cell).

[0148] The termination region has a p-type RESURF region 60 (silicon carbide layer), p + type contact region 62 , p-type guard ring region 64 (silicon carbide layer), silicon oxide layer 28 , and field oxide film 33 . The silicon oxide layer 28 is provided between the surfaces of the p-typ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a semiconductor device, a method of manufacturing the semiconductor device, an inverter circuit, a drive device, a vehicle, and an elevator. Provided is a semiconductor device capable of reducing the interface energy level density between a silicon carbide layer and a silicon oxide layer and improving performance. A semiconductor device according to an embodiment includes: a silicon carbide layer; and a silicon oxide layer located on the silicon carbide layer and containing at least one of the group consisting of phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi). An element in which at least a part of at least one element is bonded to three oxygens via a single bond and bonded to one oxygen via a double bond.

Description

[0001] Citations for Associated Applications [0002] This application is based on Japanese Patent Application No. 2017-021945 (filing date: February 9, 2017), and enjoys the benefit of priority from this application. This application incorporates the entire contents of this application by referring to this application. technical field [0003] Embodiments of the present invention relate to a semiconductor device, a method of manufacturing the semiconductor device, an inverter circuit, a drive device, a vehicle, and an elevator. Background technique [0004] Silicon carbide (SiC) is expected as a material for next-generation semiconductor devices. Silicon carbide has excellent physical properties such as three times the band gap, about ten times the breakdown electric field strength, and about three times the thermal conductivity, compared with silicon (Si). By making use of this characteristic, it is possible to realize a low-loss semiconductor device capable of high-temp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/51H01L21/04
CPCH01L21/049H01L29/517H01L29/66068H01L29/7802B60L2210/40B60L50/51H01L29/1608B60L15/007H01L29/7811H01L29/511Y02T10/64Y02T10/72Y02T10/70H01L29/408H01L29/1095B66B11/043H02P27/06H02M7/537B61C17/00B61C3/00H01L21/046H10K10/472
Inventor 清水达雄
Owner KK TOSHIBA