Rutile structure tantalum-doped tin oxide single crystal film growing in [101] crystal direction and preparation method thereof

Abstract

The invention relates to a rutile structure tantalum-doped tin oxide single crystal film growing in a [101] crystal direction and a preparation method thereof. The MOCVD (Metal-organic Chemical VaporDeposition) technology is used; tetra ethyltin (Sn(C2H5)4) is used as an organic metal Sn source; tantalum ethoxide (Ta(C2H5O)5) is used as an organic metal Ta source; oxygen gas is used as an oxide;nitrogen gas is used as carrier gas; the epitaxial growth of the tantalum-doped tin oxide single crystal film is performed on a R-surface sapphire substrate. The R-surface sapphire is used as the substrate; the rutile structure tantalum-doped tin oxide single crystal film growing in the [101] crystal direction can be prepared; the prepared tantalum-doped tin oxide single crystal film is a single crystal film; the migration rate is as high as 58.1cm<2>V<-1>s<-1>. The crystal lattice structure and the electric properties of the prepared tantalum-doped tin oxide single crystal film are superior to those of a tin oxide polycrystal film, so that the rutile structure tantalum-doped tin oxide single crystal film is an important material for making transparent semiconductor devices and ultravioletlight electronic devices.

Description

technical field [0001] The invention relates to a rutile structure tantalum-doped tin oxide single crystal thin film grown along the [101] crystal direction and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic materials. technical background [0002] In recent years, the wide bandgap oxide semiconductor material tin oxide (SnO 2 ) has attracted extensive attention of researchers due to its unique optical and electrical properties. Compared with gallium nitride (GaN, Eg ~ 3.4eV) and zinc oxide (ZnO, Eg ~ 3.37eV, exciton binding energy ~ 60meV), tin oxide has a wider band gap and higher exciton binding energy (~3.7eV and ~130meV respectively at room temperature), and the tin oxide material has the advantages of low preparation temperature, stable physical and chemical properties, and the like. At present, tin oxide thin film materials are mainly used in transparent conductive electrodes, thin film solar cells, gas sensors and arc...

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Problems solved by technology

However, it is difficult to obtain high-quality single-crystal doped films and high Hall mobility film materials, which greatly limits the application of tin oxide films in the field of optoelectronic materials and devices.

[0007] (3) Although the growth of Ta-doped tin oxide thin film materials can be realized on the sapphire substrate by using methods such as laser pulse deposition system (PLD), the crystal quality is not ideal, and the film forming area is small, so it is difficult to realize industrial production

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