A kind of preparation method of nanometer multilayer structure carbon-based film

A nano-multilayer and thin-film technology, applied in coating, metal material coating process, vacuum evaporation coating, etc., can solve the problems of easy brittle fracture, large difference in tribological behavior, low film toughness, etc. And the deposition system is simple, the deposition process is simple, and the effect of expanding the application prospect

Active Publication Date: 2020-06-30
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are still some problems in the carbon-based film itself that need to be solved: ①The prepared carbon-based film has a high internal stress, resulting in poor bonding between the film and the substrate material
②The toughness of the film is low, so brittle fracture is easy to occur
③The tribological properties of the film are affected by the test environment, and the tribological behavior exhibited in different environments is quite different
[0004] The traditional process of preparing nano-multilayer carbon-based thin films is relatively complicated, and generally requires periodic regulation of certain deposition conditions manually, for example: the deposition surface is periodically exposed to the target surface through the rotation of the sample stage; or periodic Deposition parameters such as turning on or off the target current, gas flow rate, etc., which make the film preparation process very complicated

Method used

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  • A kind of preparation method of nanometer multilayer structure carbon-based film
  • A kind of preparation method of nanometer multilayer structure carbon-based film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] First, select 5 silicon wafers with a smooth surface, put them into acetone and absolute ethanol in order to ultrasonically clean them for 15 minutes respectively, take out the silicon wafers, blow dry the residual ethanol on the surface of the silicon wafers with nitrogen, and quickly put them into DC reactive magnetron sputtering. On the substrate fixing frame in the vacuum chamber of the injection equipment, keep the substrate surface parallel to the surface of the copper plane target, and keep the distance between the two at 5cm; the sample holder is connected to the negative bias power supply; the copper plane target is connected to the DC power supply. Vacuumize until the vacuum degree is less than 6.0×10 -3 At Pa, pass in argon gas, adjust the air pressure to 2.0Pa, and conduct Ar + Plasma clean for 30 minutes. After the cleaning is completed, a mixed gas of methane and argon is introduced (the flow ratio is 0.7:1), and the DC power supply is turned on. In the c...

Embodiment 2

[0028] First, select 5 silicon wafers with a smooth surface, put them into acetone and absolute ethanol in order to ultrasonically clean them for 15 minutes respectively, take out the silicon wafers, blow dry the residual ethanol on the surface of the silicon wafers with nitrogen, and quickly put them into the vacuum of the physical vapor deposition equipment. On the substrate fixing frame in the cavity, keep the substrate surface parallel to the surface of the nickel plane target, and keep the distance between the two at 10 cm; the sample holder is connected to a negative bias power supply; the nickel plane target is connected to a DC power supply. Vacuumize until the vacuum degree is less than 6.0×10 -3 At Pa, argon gas was introduced, the pressure was adjusted to 0.6 Pa, and Ar+ plasma cleaning was performed for 30 minutes under a DC voltage of 400V bias. After the cleaning is completed, the mixed gas of methane and argon (the flow ratio is 0.2:1) is introduced, the DC powe...

Embodiment 3

[0031] First, select 5 silicon wafers with a smooth surface, put them into acetone and absolute ethanol in order to ultrasonically clean them for 15 minutes respectively, take out the silicon wafers, blow dry the residual ethanol on the surface of the silicon wafers with nitrogen, and quickly put them into the physical vapor deposition equipment. On the substrate fixing frame in the vacuum chamber, keep the substrate surface parallel to the surface of the silver plane target, and keep the distance between the two at 8 cm; the sample holder is connected to a negative bias power supply; the silver plane target is connected to a DC power supply. Vacuumize until the vacuum degree is less than 6.0×10-3 At Pa, pass in argon gas, adjust the air pressure to 1.2Pa, and conduct Ar + Plasma clean for 30 minutes. After the cleaning is completed, a mixed gas of methane and argon is introduced (the flow ratio is 0.4:1), the DC power supply is turned on, and the sputtering power of the silve...

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Abstract

The invention discloses a preparation method of a nano multi-layer structural carbon-based film. The method is characterized in that a DC reactive magneto-sputtering deposition technology is carried out; a monometallic target is used as a sputtering target; the mixed gas of methane-argon is used as a reaction gas source; and the self-forming effect is utilized to self-form the nano multi-layer carbo-based film in the carbon-based film, wherein carbon-enriched layers and metal-enriched layers are staggered in the nano multi-layer structural carbon-based film. According to the method, the reaction gas source is ionized under the inducing of a DC power supply, and thus methane and argon can produce plasma atmospheres containing various groups such as electronic groups, ion groups and free groups; the size and the direction of metal grains can be controlled through target poisoning effect; the growing surface is bombarded by low-energy ions, and thus the ions are promoted to spread and transfer, and thus the nano multi-layer carbon-based film in which the carbon-enriched layers and the metal-enriched layers are staggered can be self-formed on a substrate, and as a result, the mechanical performances of the carbon-based film can be improved. The method has the characteristics of being simple in deposition process, uniform to form the film, and high in repeatability; and the potential application prospect of the carbon-based film is extremely expanded.

Description

technical field [0001] The invention relates to a method for preparing a carbon-based nanometer multilayer film, in particular to a method for preparing a carbon-based nanometer multilayer structure film by adopting an unbalanced magnetron deposition technology, and belongs to the technical field of nanometer film preparation. Background technique [0002] Carbon-based films represented by diamond-like carbon films have a series of excellent properties such as high hardness, low friction, strong chemical stability, and corrosion resistance, and have become one of the research hotspots in the field of friction surface technology in various countries. Among them, the application and industrial production stages have been initially realized in some fields. Such as: protection and lubricating film of magnetic head, protective coating of mold, industrial cutting tool, window of infrared optical device, protective film of artificial organ, etc. [0003] At present, there are stil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/16C23C14/06
CPCC23C14/0084C23C14/022C23C14/0605C23C14/165C23C14/35
Inventor 李红轩王伟奇吉利刘晓红周惠娣陈建敏
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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