SnO2-ZnO gas sensitive material with heterostructure and preparation method thereof

Abstract

The invention discloses a SnO2-ZnO gas sensitive material with a heterostructure and a preparation method thereof. The preparation method comprises the following steps: (1) adding an organic weak baseinto a stannic chloride ethanol solution, adjusting pH to 8-10 and ageing, thereby acquiring a tin sol; (2) dispersing a ZnO nanowire into the tin sol and adding hexamethylenetetramine, thereby acquiring a prepared reaction solution; (3) putting the prepared reaction solution into a high-pressure reactor, reacting, and then filtering, washing and drying a reaction product, thereby acquiring the SnO2-ZnO gas sensitive material with the heterostructure. The method has the advantages of simple process, mild conditions and easiness in large-scale production. The prepared SnO2-ZnO gas sensitive material has a multilayer heterostructure and is capable of effectively avoiding the agglomeration of ZnO nanowires and SnO2 nanometer grains; the material has a large specific area and forms a mass ofheterojunctions; the reaction activity site density of the material surface is obviously promoted; the response of the gas sensitive material to various gases is effectively promoted; the gas sensitive material is endowed with an excellent gas-sensitive characteristic.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, in particular, the invention relates to a heterostructured tin dioxide-zinc oxide gas sensitive material and a preparation method thereof. Background technique [0002] At present, due to the deteriorating environmental pollution, it is of great significance to effectively detect harmful gases in the environment. Gas sensors based on metal-oxide-semiconductor gas-sensing materials have been widely used in industrial production, home security, and environmental hygiene monitoring due to their advantages such as adjustable sensitivity and gas selectivity, small size, low cost, and simple fabrication. Among them, the metal oxide semiconductor gas sensitive material is the core component of the gas sensor, and its performance directly affects the performance and practical application of the gas sensor. At present, the common problems of sensors based on metal oxide semiconduc...

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Problems solved by technology

Chinese patents CN106430292A and CN101323975B disclose a heterostructure ZnO-SnO 2 Nanocomposite materials, using CVD method on ZnO or SnO 2 Growth of SnO on Nanowire Surface 2 Or ZnO nanowires, forming a dendritic heterostructure, the preparation process is cumbersome, the conditions are very harsh, and the yield is low, which seriously limits the promotion and application of materials in gas sensors.

Chinese patent CN105887465A prepared heterostructured ZnO-SnO by multi-step processes such as electrospinning and low temperature water bath 2 Composite materials, micron structure size, complex process, limited improvement on gas sensing performance

At the same time, Chinese patent CN106053556A and Chinese patent CN103776870B adopt multi-step hydrothermal method or template method on SnO 2 Surface modification of ZnO nanoparticles by nanospheres or nanoflowers to prepare heterostructured ZnO-SnO 2 Composite materials, ZnO particles grown on the surface are easy to agglomerate, which ultimately leads to limited performance improvement of composite gas-sensing materials

Chinese patent CN105948105A uses hydrothermal method to grow SnO on the surface of ZnO nanorods 2 Nanorods, ZnO-SnO Heterostructures 2 composite materials, but the surface of ZnO nanorods covered with SnO 2 Nanorods are inhomogeneous and cannot fully utilize ZnO and SnO 2 synergistic effect, the improvement of gas sensing performance will not be significant

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