Preparation method of transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene

A perovskite oxide, a technology to promote crystallization, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problem of poor quality, easy oxidation of silicon surface, and difficulty in meeting the crystallization temperature of ferroelectric thin films And other issues

Active Publication Date: 2018-12-18
XI AN JIAOTONG UNIV
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Problems solved by technology

For example, people hope to grow ferroelectric thin films on silicon substrates with the help of semiconductor silicon process lines that have been widely established, but since the silicon surface is easily oxidized, films in polycrystalline or amorphous states will be obtained; It is hoped to combine the ferroelectric film with a flexible substrate, but the melting point of common flexible substrates such as polyimide film (PI), polyethylene terephthala...

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  • Preparation method of transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene
  • Preparation method of transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene
  • Preparation method of transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene

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preparation example Construction

[0027] see figure 1 , the preparation method of graphene-promoted crystallization transferable perovskite oxide piezoelectric texture film of the present invention comprises the following steps:

[0028] Step 1: Select graphene as the intermediate layer material between the oxide and the substrate;

[0029] Step 2: Use pulsed laser deposition to grow the film, the specific method is as follows:

[0030] 2-1) Install the perovskite oxide target and graphene substrate to be grown in a vacuum chamber, and pump the air pressure in the vacuum chamber to 5×10 -4 Below Pa, to remove the pollution impurities adsorbed on the graphene surface;

[0031] 2-2) Heating the graphene substrate to 500°C to 800°C, feeding oxygen into the vacuum chamber, and controlling the air pressure between 10Pa and 20Pa;

[0032] 2-3) Use a pulsed laser to control the laser energy density at 1.5J / cm 2 ~3J / cm 2 In between, use a lens to focus the laser on the surface of the barium titanate ceramic targe...

Embodiment 1

[0037] 1) Barium titanate ceramic target and graphene-coated SiO 2 / Si substrate is installed in the cavity of pulsed laser deposition equipment;

[0038] 2) Use a vacuum pump to pump the pressure in the chamber to the back pressure of 5×10 -4 Pa;

[0039] 3) heating the silicon-based graphene substrate to 650°C;

[0040] 4) Introduce high-purity oxygen and adjust the air pressure at 10Pa;

[0041] 5) Cover the substrate with a baffle, turn on the laser, adjust the laser to focus on the surface of the barium titanate ceramic target, and perform pre-sputtering to remove impurities on the target surface;

[0042] 6) Adjust the laser energy density to 1.8J / cm 2 , control the frequency at 5Hz, open the baffle in front of the substrate, and start film growth;

[0043] 7) According to the required film thickness, after waiting for a certain growth time, turn off the laser and stop the film growth;

[0044] 8) Turn off the vacuum pump, fill the cavity with enough oxygen, and ad...

Embodiment 2

[0048] 1) Barium titanate ceramic target and graphene-coated SiO 2 / Si substrate is installed in the cavity of pulsed laser deposition equipment;

[0049] 2) Use a vacuum pump to pump the pressure in the chamber to the back pressure of 5×10 -4 Pa;

[0050] 3) heating the silicon-based graphene substrate to 500°C;

[0051] 4) Introduce high-purity oxygen and adjust the air pressure at 10Pa;

[0052] 5) Cover the substrate with a baffle, turn on the laser, adjust the laser to focus on the surface of the barium titanate ceramic target, and perform pre-sputtering to remove impurities on the target surface;

[0053] 6) Adjust the laser energy density to 1.5J / cm 2 , control the frequency at 1Hz, open the baffle in front of the substrate, and start film growth;

[0054] 7) According to the required film thickness, after waiting for a certain growth time, turn off the laser and stop the film growth;

[0055] 8) Turn off the vacuum pump, fill the cavity with enough oxygen, and ad...

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Abstract

The invention discloses a preparation method of a transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene. The preparation method comprises the following steps: 1) graphene is selected as an interlayer material of an oxide and a substrate; and 2) a pulse laser deposition technology is selected to use as a film growth method; the growth temperature is controlled within 500-800 DEG C; the oxygen partial pressure is controlled within 10-20 Pa; the laser energy is controlled within 1.5-3 J/cm2; and the frequency is 1-10 Hz. The prepared film with a perovskite structure is analyzed by X-ray diffraction (XRD), an atomic force microscope (AFM) and a piezoelectric force microscope (FPM); the film obtained by growth has excellent texture crystallization characteristic; the film layer thickness is controllable within 300 nm; the film surface is smooth; the RMS roughness is within 1 nm; and the grown film achieves the piezoelectricity and the potential of transferring to any substrate.

Description

technical field [0001] The invention relates to a method for growing a perovskite oxide film, in particular to a method for preparing a transferable perovskite oxide piezoelectric texture film whose crystallization is promoted by graphene. Background technique [0002] Ferroelectric oxide thin films are used to prepare devices such as energy conversion, information storage, and temperature detection due to their ferroelectric, piezoelectric, and pyroelectric properties. They are widely used in various fields such as national defense, education, medical care, aerospace, and information. Wide range of applications. [0003] At present, on some specific substrates, many people have achieved the preparation of ferroelectric piezoelectric thin films with good crystal quality on oxide substrates such as strontium titanate. However, in order to meet more diverse functional requirements, people have been hoping to grow ferroelectric thin films on more diverse substrates. For examp...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 牛刚代立言赵金燕任巍王玲艳白炜史鹏
Owner XI AN JIAOTONG UNIV
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