Preparation method of transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene

Abstract

The invention discloses a preparation method of a transferable perovskite oxide piezoelectric texture film for promoting crystallization by graphene. The preparation method comprises the following steps: 1) graphene is selected as an interlayer material of an oxide and a substrate; and 2) a pulse laser deposition technology is selected to use as a film growth method; the growth temperature is controlled within 500-800 DEG C; the oxygen partial pressure is controlled within 10-20 Pa; the laser energy is controlled within 1.5-3 J / cm2; and the frequency is 1-10 Hz. The prepared film with a perovskite structure is analyzed by X-ray diffraction (XRD), an atomic force microscope (AFM) and a piezoelectric force microscope (FPM); the film obtained by growth has excellent texture crystallization characteristic; the film layer thickness is controllable within 300 nm; the film surface is smooth; the RMS roughness is within 1 nm; and the grown film achieves the piezoelectricity and the potential of transferring to any substrate.

Description

technical field [0001] The invention relates to a method for growing a perovskite oxide film, in particular to a method for preparing a transferable perovskite oxide piezoelectric texture film whose crystallization is promoted by graphene. Background technique [0002] Ferroelectric oxide thin films are used to prepare devices such as energy conversion, information storage, and temperature detection due to their ferroelectric, piezoelectric, and pyroelectric properties. They are widely used in various fields such as national defense, education, medical care, aerospace, and information. Wide range of applications. [0003] At present, on some specific substrates, many people have achieved the preparation of ferroelectric piezoelectric thin films with good crystal quality on oxide substrates such as strontium titanate. However, in order to meet more diverse functional requirements, people have been hoping to grow ferroelectric thin films on more diverse substrates. For examp...

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Problems solved by technology

For example, people hope to grow ferroelectric thin films on silicon substrates with the help of semiconductor silicon process lines that have been widely established, but since the silicon surface is easily oxidized, films in polycrystalline or amorphous states will be obtained; It is hoped to combine the ferroelectric film with a flexible substrate, but the melting point of common flexible substrates such as polyimide film (PI), polyethylene terephthalate (PET) and other organic materials is generally within 300 °C , it is difficult to meet the crystallization temperature as high as 500 °C required by the ferroelectric thin film growth process, so the thin film obtained on the flexible substrate can only be a poor quality amorphous thin film that cannot be crystallized

No technology has yet accomplished the work of fabricating high-quality textured ferroelectric piezoelectric thin films on arbitrary substrates

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