A mass thickness of 500-1000μg/cm 2 Free-standing gallium thin film and its preparation method

A technology of mass thickness and supporting gallium, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of poor flatness, complicated preparation steps, affecting the use of self-supporting targets, etc.
CN109082634BActive Publication Date: 2020-04-24泰安泰山科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
泰安泰山科技有限公司
Publication Date
2020-04-24

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Abstract

The invention discloses a large-scale self-supporting gallium thin-film and a preparation method thereof. The preparation method comprises the following steps that (1) a potassium chloride release agent is deposited on the surface of a substrate; (2) a magnesium oxide buffer thin-film is deposited on the surface of a substrate by adopting a 90-degree magnetic filtration cathode vacuum arc (FCVA) system; (3) a sample is rotated by 180 degrees, and a gallium thin-film is deposited again by adopting a straight tube magnetic filtration cathode vacuum arc (FCVA) system; (4) the obtained substrate is put into a container filled with ethanol solutions for demoulding treatment; and (5) the gallium thin-film is fished with a fishing plate to obtain a self-supporting gallium thin-film with mass thickness of 500-1000[mu]g / cm<2>. According to the large-scale self-supporting gallium thin-film and the preparation method thereof, the self-supporting gallium thin-film with the mass thickness of 500-1000[mu]g / cm<2>, low stress, uniformity and density is prepared, and process is simple.
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Description

technical field

[0001] The invention relates to the field of film preparation, in particular to a film with a mass thickness of 500-1000 μg / cm 2 Free-standing gallium thin film and its preparation method. Background technique

[0002] A self-supporting film, as opposed to a film with a substrate, refers to a film that is not supported by a substrate during use. The commonly used self-supporting film preparation technology is to coat or grow a soluble release agent on a solid polished surface (such as a polished silicon wafer or glass sheet), deposit a film, and then dissolve the release agent.

[0003] In addition to being self-supporting, the self-supporting film is also required to have the characteristics of no defect, uniform flatness, purity, large area, and low stress. Chinese patent CN106868460A, using focused heavy ion sputtering method to prepare a mass thickness of 400 ~ 2000μg / cm 2 The self-supporting Ir target solves the technical problems of curling and extre...

Claims

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