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Ordered porous array built by sliver and tantalum composite material as well as preparation method thereof

A technology of composite materials and porous arrays, applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problems of limited adsorption, separation, catalysis, sensing applications, complex preparation process, and inconvenient mass preparation , to achieve the effects of easy-to-obtain raw materials, simple operation, good catalytic and optical properties

Active Publication Date: 2019-01-08
苏州博志金钻科技有限责任公司
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  • Application Information

AI Technical Summary

Problems solved by technology

Most of these methods have complex preparation processes, are not convenient for large-scale preparation, and have high costs. In addition, the surface of the mesoporous materials prepared by these methods is covered with a large number of organic compounds, which severely limits the application of adsorption, separation, catalysis, and sensing.

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  • Ordered porous array built by sliver and tantalum composite material as well as preparation method thereof
  • Ordered porous array built by sliver and tantalum composite material as well as preparation method thereof
  • Ordered porous array built by sliver and tantalum composite material as well as preparation method thereof

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preparation example Construction

[0034] The invention provides a method for preparing an ordered porous array constructed of a silver-tantalum composite material, comprising the following steps:

[0035] 1) Single crystal silicon wafer is selected as the substrate, and the single crystal silicon wafer substrate is selected from Si(100), Si(111), SiO 2 Sheet (Si / SiO 2 , the thickness of the oxide layer is 300nm) or quartz glass. And carry out pretreatment before coating; specifically, use deionized water, absolute ethanol, and acetone to ultrasonically clean the surface of the single crystal silicon wafer for 10-20 minutes.

[0036] 2) Put the cleaned single crystal silicon substrate into the magnetron sputtering coating equipment to prepare the chromium primer layer, specifically using Ar gas or nitrogen as the sputtering atmosphere, under the condition of applying a voltage of 60V to the substrate, using Magnetron sputtering is performed on the chromium target by radio frequency, and the radio frequency fr...

Embodiment 1

[0043] 1) Cleaning: immerse the Si(100) substrate in ethanol and acetone solution for 10 minutes, take it out and soak it in deionized water for 5 minutes, then take it out, dry it with high-purity nitrogen, and then quickly put it into the magnetron sputtering coating equipment middle.

[0044] 2) Chromium primer preparation: prepare the chromium primer on the clean single crystal silicon surface, use Ar gas as the sputtering atmosphere, apply a voltage of 60V, and use radio frequency to carry out magnetron sputtering on the chromium target, the radio frequency frequency is 250kHz; the chromium film The thickness is 100nm.

[0045]3) Silver and tantalum deposition: After the preparation of the chromium base layer, co-sputtering of silver and tantalum elements is carried out, in which the applied voltage is 60V, the current of the silver target is 5A, the current of the tantalum target is 1.8A, and the deposition time is 25min. On the surface of the single crystal silicon sub...

Embodiment 2

[0050] 1) Cleaning: immerse the Si(111) substrate in ethanol and acetone solution for 10 minutes, take it out and soak it in deionized water for 5 minutes, then take it out, dry it with high-purity nitrogen, and then quickly put it into the magnetron sputtering coating equipment .

[0051] 2) Chromium primer preparation: prepare chromium primer on the clean single crystal silicon surface, use nitrogen as the sputtering atmosphere, apply 60V voltage, and use radio frequency to perform magnetron sputtering on the chromium target with a radio frequency frequency of 250kHz; the thickness of the chromium film 100-500nm.

[0052] 3) Silver and tantalum deposition: After the preparation of the chromium base layer, co-sputtering of silver and tantalum elements is carried out, in which the applied voltage is 60V, the current of the silver target is 5A, the current of the tantalum target is 1A, and the deposition time is 25min. On the surface of the crystalline silicon substrate, the d...

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Abstract

The invention provides an ordered porous array built by a sliver and tantalum composite material as well as a preparation method thereof. The preparation method comprises the following steps: depositing a sliver and tantalum composite film through magnetron sputtering, putting a completely cleaned monocrystalline silicon slice under vacuum and depositing a chromium film; controlling the current intensity, accurately regulating and controlling the deposition rate of silver and tantalum elements separately, maintaining the reaction pressure of a chamber, performing continuous sputtering deposition, plugging gap formed in the deposition process of the silver by the tantalum element, and forming the ordered porous array built by the sliver and tantalum composite material under proper deposition rate of the silver and tantalum elements. Along with the increment of the tantalum deposition rate, the film surface porous array can be heavily plugged by the tantalum element, and smoother film surface appearance is further formed. The sliver and tantalum composite material ordered porous array prepared by the method is simple in preparation process, large in specific surface area, convenientin large-area growth, low in cost, avoids organic compound pollution on the surface of the film, and can be widely applied in the fields of SERS sensing, metal catalysis, nanometer probes, photoelectric devices, solar batteries, adsorbing materials and the like.

Description

technical field [0001] The invention relates to the technical field of advanced nanocomposite materials, in particular to an ordered porous array constructed of silver-tantalum composite materials and a preparation method thereof. Background technique [0002] Due to the uniform pore size and high specific surface area, mesoporous materials have broad application prospects in adsorption, separation, catalysis, sensing, and energy conversion. Mesoporous materials are generally synthesized by solution-phase hydrothermal and solvent evaporation-induced self-assembly methods. Traditional mesoporous materials are generally synthesized using templates (such as cetyltrimethylammonium bromide, P123, etc.). The pore size of mesoporous materials obtained by using these conventional templates is generally not more than 12 nm. Most of these methods have complex preparation processes, are not convenient for large-scale preparation, and have high costs. In addition, the surface of the m...

Claims

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Application Information

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IPC IPC(8): C23C14/16C23C14/35C23C14/54
Inventor 宋忠孝陈东圳井津域黄剑杨波钱旦
Owner 苏州博志金钻科技有限责任公司
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