Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Continuous crystal growing method of silicon carbide single crystals

A silicon carbide single crystal, high-purity silicon carbide technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of stopping the growth of silicon carbide single crystal, reducing the quality of silicon carbide single Continuity and other problems, to achieve uniform and stable temperature field, reduce single crystal defects, and achieve uniform, stable and orderly temperature field

Active Publication Date: 2019-01-18
SICC CO LTD
View PDF9 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the carbon-rich atmosphere reaches a certain level, the growth of silicon carbide single crystal will stop, and the growth process cannot be continued; and the low partial pressure of silicon vapor will cause the imbalance of carbon-silicon ratio at the growth interface of silicon carbide single crystal, secondary polytype, inclusions and other defects. Reduce the quality of silicon carbide single crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Continuous crystal growing method of silicon carbide single crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Embodiment 1, continuous crystal growth method of silicon carbide single crystal

[0058] use as figure 1 The shown crucible produces silicon carbide single crystal according to the PVT method, and the specific steps are as follows:

[0059] 1. Place the high-purity silicon carbide powder in the chamber 1 of the crucible; put the seed crystal into the top of the lid 4 of the crucible, and seal the chamber 1;

[0060] 2. Vacuum chamber 1 to an air pressure of 10 -6 Below mbar, then pass high-purity inert gas to 400mbar, repeat this process 2-3 times, and finally pump the air pressure in chamber 1 to 10 -6 above mbar;

[0061] 3. Slowly raise the temperature in chamber 1 to 1000°C, and mix high-purity inert gas-argon and high-purity hydrogen at a volume ratio of 50:1 into the chamber to raise the air pressure to 700mbar and keep it for 8h;

[0062] 4. Reduce the pressure in chamber 1 to the single crystal growth pressure of 30mbar, and then pass the mixed gas (the vol...

Embodiment 2

[0066] Embodiment 2, continuous crystal growth method of silicon carbide single crystal

[0067] use as figure 1 The shown crucible produces silicon carbide single crystal according to the PVT method, and the specific steps are as follows:

[0068] 1. Place the high-purity silicon carbide powder in the chamber 1 of the crucible; put the seed crystal into the top of the lid 4 of the crucible, and seal the chamber 1;

[0069] 2. Vacuum chamber 1 to an air pressure of 10 -6 Below mbar, then pass high-purity inert gas to 300mbar, repeat this process 2-3 times, and finally pump the air pressure in chamber 1 to 10 -6 above mbar;

[0070] 3. Slowly raise the temperature in chamber 1 to 800°C, and mix high-purity inert gas-helium and high-purity hydrogen at a volume ratio of 100:1 into the chamber to raise the air pressure to 600mbar and keep it for 10h;

[0071] 4. Reduce the pressure in the chamber 1 to the single crystal growth pressure of 10mbar, and then pass the mixed gas (t...

Embodiment 3

[0075] Embodiment 3, continuous crystal growth method of silicon carbide single crystal

[0076] use as figure 1 The shown crucible produces silicon carbide single crystal according to the PVT method, and the specific steps are as follows:

[0077] 1. Place the high-purity silicon carbide powder in the chamber 1 of the crucible; put the seed crystal into the top of the lid 4 of the crucible, and seal the chamber 1;

[0078] 2. Vacuum chamber 1 to an air pressure of 10- 6 Below mbar, then pass high-purity inert gas to 500mbar, repeat this process 2-3 times, and finally pump the air pressure in chamber 1 to 10- 6 above mbar;

[0079] 3. Slowly raise the temperature in chamber 1 to 1200°C, and mix high-purity inert gas-argon and helium gas with high-purity hydrogen at a volume ratio of 120:1 into the chamber to make the air pressure Rise to 800mbar and keep for 5h;

[0080] 4. Reduce the air pressure in the chamber 1 to the single crystal growth pressure of 50mbar, and then ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a continuous crystal growing method of silicon carbide single crystals. The method is characterized in that silicon carbide single crystals are produced by using high-purity silicon carbide powder as raw materials by a physical vapor phase transporting method; in the silicon carbide single crystal production process, high-purity silane and carbon particles generating carbonization in high-purity silicon carbide powder react; high-purity silicon carbide powder is formed again to continuously supplement raw materials; the continuous growth of the silicon carbide single crystals is realized. In addition, the method is proceeded by using a crucible with double layer cavity walls, wherein open holes are formed in the side wall of the double layer cavity walls; the bottomcorner part of the cavity wall adopts circular arc design. The method has the important effects in the aspects of ensuring the continuous growth of large-size single crystals, inhibiting the siliconcarbide powder edge carbonization, improving the power quality, reducing the impurity content of the silicon carbide single crystals, improving the quantity of the silicon carbide single crystals andthe like.

Description

technical field [0001] The invention relates to a method for producing a silicon carbide single crystal, in particular to a continuous crystal growth method for a silicon carbide single crystal. Background technique [0002] Silicon carbide is a typical wide bandgap semiconductor material and one of the representatives of the third generation of semiconductor materials after silicon and gallium arsenide. Silicon carbide materials have excellent characteristics such as high thermal conductivity, high breakdown field strength, and high saturation electron mobility, and have become one of the popular materials for preparing high-temperature, high-frequency, high-power and radiation-resistant devices. [0003] At present, the methods of silicon carbide growth mainly include physical vapor transport (PVT), liquid phase epitaxy (LPE), chemical vapor deposition (CVD), etc. Among them, PVT method is the most mature method and the only one that can be used at present. Provides the g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/002C30B29/36
Inventor 李加林李宏刚刘家朋李长进孙元行刘鹏飞高超
Owner SICC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com