Method for preparing AlN powder

A powder and solid technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, inorganic chemistry, etc., can solve the problems of long reaction time, high synthesis temperature, complex process, etc., and achieve simple preparation method , low reaction temperature, environmentally friendly effect
CN109264679AInactive Publication Date: 2019-01-25SHAANXI UNIV OF SCI & TECH +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHAANXI UNIV OF SCI & TECH
Publication Date
2019-01-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for preparing AlN powder. The method includes first dissolving an aluminum source and a nitrogen source completely in a solvent according to the Al:N molar ratio of 1:1-1:35, mixing evenly, drying the solvent by evaporating, roasting an obtained solid mixture at 500-1000 DEG C for 1-9h in a roasting atmosphere, and then decarburizing the mixture at 200-750 DEG C for 1 to 5h in an air atmosphere to obtain the high-purity AlN powder. The aluminum source is aluminum chloride hydrate, aluminum lactate, aluminum glycinate, aluminum stearate and the like; the nitrogen source is guanidine hydrochloride, guanidine acetate, chitosan, 1,10-phenanthroline; the solvent is any one of deionized water, methanol, ethanol, ethyl acetate, acetone, diethyl ether, benzene andtoluene; the roasting atmosphere is one or two of nitrogen, ammonia, argon and helium. Compared with the conventional AlN preparation method, the method has the advantages of wide reactant range, environmentally-friendly process, simple operation, high product purity and low cost.
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Description

technical field

[0001] The invention belongs to the technical field of material preparation, and in particular relates to a method for preparing AlN powder. Background technique

[0002] Aluminum nitride (AlN) is a group III-V covalent compound, which belongs to the diamond-like nitride of the hexagonal wurtzite crystal structure. Its room temperature strength is high (it is Al 2 o 3 More than 5 times of that), the thermal expansion coefficient is small, which can greatly improve the thermal conductivity of plastics and silicone rubber, and is a good heat-shock resistant material; it has strong resistance to molten metal erosion, and is an ideal crucible for melting and casting pure iron, aluminum or aluminum alloys Material; has excellent electrical insulation, resistivity as high as 426Ω·cm, and good dielectric properties. It is an ideal heat dissipation material and packaging material for large-scale integrated circuits, semiconductor module circuits and high-power devi...

Claims

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