Spin Hall nano-oscillator and preparation method based on out-of-plane magnetic anisotropy layer
A magnetic anisotropy and nano-oscillator technology, which is applied in power oscillators, Hall effect devices, devices applying electro-magnetic effects, etc., can solve problems affecting microwave signal quality, small frequency adjustment range, single use frequency, etc. problem, to achieve the effect of low power consumption, small excitation current density, and easy integration
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Embodiment 1
[0027] like figure 1 Shown is a structural schematic diagram of a spin Hall nano-oscillator based on an out-of-plane magnetic anisotropic layer provided by the present invention; comprising a gadolinium gallium garnet (GGG) single crystal substrate, and sequentially formed on the GGG substrate single crystal thulium iron garnet (TmIG) thin film and platinum layer on top.
[0028] The spin Hall effect converts the in-plane non-spin-polarized charge flow into a perpendicular film by asymmetric electron scattering in a nonmagnetic heavy metal thin-film layer with high spin-orbit interactions when current flows in-plane through the platinum layer The pure spin current on the surface, the generated spin current can exert a spin transfer torque on the magnetic moment of the magnetic thin film layer. When a certain critical current is exceeded, the spin transfer torque can completely compensate the local magnetic moment precession damping , and then output the microwave oscillation ...
Embodiment 2
[0036] In this embodiment, the substrate is a gadolinium gallium garnet (GGG) single crystal substrate; the magnetic film layer is bismuth-doped thulium iron garnet ((TmBi) 3 (FeGa) 5 o 12 ) with a thickness of 1 μm; the non-magnetic heavy metal film layer is tantalum (Ta) with a thickness of 8 nm.
[0037] The process flow chart for the preparation of a spin Hall nano-oscillator based on an out-of-plane magnetic anisotropic layer provided in Example 2 specifically includes the following steps:
[0038] Step 1, select a gadolinium gallium garnet (GGG) single crystal substrate as a substrate, after cleaning, grow a bismuth-doped thulium iron garnet film with a thickness of 1 μm on the single crystal substrate by magnetron sputtering;
[0039] Step 2, using the magnetron sputtering method to grow a tantalum layer with a thickness of 8nm on the film obtained in step 1 to obtain a TmBiIG / Ta double-layer heterostructure; the specific process is: first, in 10 -5In a Pa-level vacu...
Embodiment 3
[0043] The difference between this embodiment and embodiment 2 is that: the magnetic film layer is chromium bromide, and the thickness of chromium bromide is 200-300nm; the rest is the same as embodiment 2.
[0044] The present invention provides a spin Hall nano-oscillator based on an out-of-plane magnetic anisotropic layer, including a substrate, and an out-of-plane magnetic anisotropic magnetic film layer and a non-magnetic heavy metal sequentially formed on the substrate film layer. The device is a micro-nano-scale device based on the spin Hall effect and driven by pure spin current to generate microwave signals. When the current flows through the plane of the non-magnetic heavy metal film layer, the micro-nano-scale device passes through Asymmetric electron scattering in a nonmagnetic heavy metal thin film layer with high spin-orbit interaction, the spin Hall effect converts the in-plane non-spin-polarized charge flow into a pure spin current perpendicular to the film pla...
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Abstract
Description
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