Rapid preparation method of high flatness and low damage single crystal silicon carbide substrate
A single crystal silicon carbide and flatness technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the disk surface affects the wafer surface shape, deep scratches, and processing efficiency reduction, so as to improve processing efficiency, Shallow embedding scratches and good surface parameters
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[0047] A method for preparing a high-flatness, low-damage single-crystal silicon carbide substrate, the preparation method comprising:
[0048] Step 1, initial processing: perform initial processing on the single crystal silicon carbide substrate;
[0049] Step 2. Diamond wire cutting: use a diamond wire to cut the monocrystalline silicon carbide initially processed in step 1, wherein the cutting wire tension is 22-40N, the wire running speed is 1200-1800m / min, and the swing angle is 1-10°. Knife speed 5-15mm / h, diamond wire diameter 0.12-0.28mm;
[0050] Step 3, grinding wheel grinding: Install grinding wheels of two meshes in the two stations of the Grinding (grinding) equipment respectively, as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by the diamond wire in step 2, wherein , use 1000-5000-mesh grinding wheel for coarse grinding, speed, feed speed; fine grinding use 20000-30000-mesh grinding wheel, speed 1000-2000rpm, feed speed 0.2...
Embodiment 1
[0053] A method for preparing a high-flatness, low-damage single-crystal silicon carbide substrate with a diameter of 100 mm, the preparation method comprising:
[0054] Step 1, initial processing: perform initial processing on the single crystal silicon carbide substrate;
[0055] Step 2. Diamond wire cutting: use a diamond wire to cut the monocrystalline silicon carbide initially processed in step 1, wherein the cutting wire tension is 22N, the wire running speed is 1200m / min, the swing angle is 5°, and the feed speed is 5mm / h. Diamond wire diameter 0.12mm;
[0056] Step 3, grinding wheel grinding: Install grinding wheels of two meshes in the two stations of the Grinding (grinding) equipment respectively, as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by the diamond wire in step 2, wherein , use 1000-mesh grinding wheel for coarse grinding, speed, feed speed; use 20000-mesh grinding wheel for fine grinding, speed 1000rpm, feed speed 0....
Embodiment 2
[0062] A method for preparing a high-flatness, low-damage single-crystal silicon carbide substrate with a diameter of 100 mm, the preparation method comprising:
[0063] Step 1, initial processing: perform initial processing on the single crystal silicon carbide substrate;
[0064] Step 2. Diamond wire cutting: use a diamond wire to cut the monocrystalline silicon carbide initially processed in step 1, wherein the cutting wire tension is 40N, the wire running speed is 1800m / min, the swing angle is 10°, and the feed speed is 15mm / h. Diamond wire diameter 0.28mm;
[0065] Step 3, grinding wheel grinding: Install grinding wheels of two meshes in the two stations of the Grinding (grinding) equipment respectively, as rough grinding and fine grinding, and grind the single crystal silicon carbide cut by the diamond wire in step 2, wherein , rough grinding uses 5000 mesh grinding wheel, speed, feed speed; fine grinding uses 30000 mesh grinding wheel, speed 2000rpm, feed speed 1um / s; ...
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