Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-performance Si@SnO2@C composite material and preparation method and application thereof

A composite material, high-performance technology, used in electrical components, electrochemical generators, battery electrodes, etc., to achieve the effects of superior lithium storage performance, excellent charge and discharge performance, and simple operation process

Active Publication Date: 2019-05-03
YANCHENG INST OF TECH
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

How to design and make use of this feature to design and prepare new silicon-based composite materials has not yet been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance Si@SnO2@C composite material and preparation method and application thereof
  • High-performance Si@SnO2@C composite material and preparation method and application thereof
  • High-performance Si@SnO2@C composite material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] (1) Take 1.0 g of Si powder and treat it at 600 °C for 1 h in a muffle furnace to prepare a thermally oxidatively modified Si material; (2) The modified Si nanoparticles are dispersed in 80 mL of deionized water and ultrasonicated for 30 min, and then added Sonicate 0.08g thioglycolic acid for 10min, add 1mL concentrated hydrochloric acid for 5min, add 0.2g urea for 5min; finally add 0.7g SnCl 2, ultrasonication for 10 min; stirring at room temperature 25°C for 40 h; suction filtration after the reaction, washing twice with water and once with ethanol. Vacuum drying at 70°C for 2h to obtain Si@SnO 2 Structural material; (3) 100mL (28.6mL of deionized water and 71.4mL of ethanol) mixed aqueous solution, ultrasonically stirred evenly. Then 0.2g Si@SnO obtained by the above steps 2 Disperse in it and stir ultrasonically for 20min; add 1.2g CTAB, 0.175g resorcinol, and 0.3mL ammonia water to the above solution, and ultrasonically stir for 30min; Add formaldehyde solution...

Embodiment 2

[0044] (1) Take 1.0g of Si powder and treat it with hydrogen peroxide-sulfuric acid mixed solution for 1h to prepare chemical oxidation modified Si material;

[0045] (2) The modified Si nanoparticles were dispersed in 80mL of deionized water and sonicated for 30min, then 0.035g of thioglycolic acid was added for sonication for 10min, 0.2mL of concentrated hydrochloric acid was added for sonication for 5min, and 0.1g of urea was added for sonication for 5min; finally, 0.2 gSnCl 2 , sonicated for 10min; stirred at 20°C for 72h. After the reaction, filter with suction, wash twice with water and once with ethanol; dry in vacuum at 70°C for 2h to obtain Si@SnO 2 Structural materials;

[0046] (3) Mix 100mL (10mL of deionized water and 90mL of ethanol) in an aqueous solution, and ultrasonically stir it evenly; then 0.2g of Si@SnO obtained in the above steps 2 Disperse in it and stir ultrasonically for 20min; add 0.3g CTAB, 0.0875g resorcinol, and 0.1mL ammonia water into the abo...

Embodiment 3

[0050] (1) Take 1.0g of Si powder and treat it with PVP solution for 1h to prepare surfactant-modified Si material;

[0051] (2) The modified Si nanoparticles were dispersed in 80 mL of deionized water and sonicated for 30 minutes, then 0.15 g of thioglycolic acid was added for 10 minutes of sonication, 2 mL of concentrated hydrochloric acid was added for 5 minutes of sonication, and 0.5 g of urea was added for 5 minutes of sonication. Finally add 1.0gSnCl 2 , ultrasonication for 10 min; stirring at 60°C for 0.5 h; suction filtration after the reaction, washing twice with water and once with ethanol. Vacuum drying at 70°C for 2h to obtain Si@SnO 2 Structural materials;

[0052] (3) Mix 100 mL (50 mL of deionized water and 50 mL of ethanol) in an aqueous solution, and stir it evenly by ultrasonic. Then 0.2g Si@SnO obtained by the above steps 2 Disperse in it and stir ultrasonically for 20min; add 3.6g CTAB, 0.7g resorcinol, and 1.2mL ammonia water into the above solution, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Carbon layer thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-performance Si@SnO2@C composite material and a preparation method and application thereof. The method comprises firstly introducing a functional group into the surface of high-capacity nano-silicon by surface modification; in-situ depositing a uniform SnO2 layer; introducing a uniform carbon layer precursor by in-situ polymerization of phenolic resin; and obtaining ahigh-performance multilayer core-shell structure composite material by high-temperature calcinations. The invention also discloses a high-performance Si@SnO2@C composite material and application thereof. The method improves the electrochemical performance of the electrode material by coating the outer side of the intermediate layer of an active material with a double coating layer according to the characteristics that a volume effect is liable to occur in the charge and discharge cycle of the lithium battery Si negative electrode material. The SnO2 layer is not limited to the use as an inertcoating medium, can also be used as a lithium storage material at a wider potential of 0.01 to 3V. The SnO2 layer also has a volume effect, and can provide a sufficient buffer space for the silicon having a significant volume effect. Such design structure is advantageous for improving the cycle performance of the silicon-based material and increasing a reversible capacity.

Description

technical field [0001] The invention relates to the technical field of silicon-based negative electrode materials for lithium-ion batteries, in particular to a high-performance Si@SnO 2 @C Composite materials and their preparation methods and applications. Background technique [0002] Lithium-ion batteries have the advantages of high open-circuit voltage, high energy density, long service life, no memory effect, less pollution, and low self-discharge rate. Its overall performance is superior to other traditional secondary batteries, and it is unanimously considered as a variety of portable batteries. The most ideal power supply for electronic equipment and electric vehicles. Although graphite, the negative electrode material of traditional lithium-ion batteries, has good cycle stability and high cost performance, due to its low charge-discharge specific capacity and no advantage in volume specific capacity, it is difficult to meet the high requirements of power systems, es...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01M4/36H01M4/38H01M4/48H01M4/62H01M10/054
CPCY02E60/10
Inventor 岳鹿张文惠蒲旭清沈超关荣锋徐琪张婷婷杨勇
Owner YANCHENG INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com