Preparation method of mesa type extending wavelength indium gallium arsenic detector with low stress passivation

A detector, mesa technology, applied in semiconductor devices, gaseous chemical plating, final product manufacturing, etc. Infrared focal plane connectivity rate and other issues, to achieve good passivation effect, reduce dangling keys, high reliability

Active Publication Date: 2019-05-14
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In the existing manufacturing process of the mesa-type InGaAs focal plane detector chip, the conventional inductively coupled plasma chemical vapor deposition growth passivation film has a large warpage of the large area detector chip due to the high stress of the film. , which is not conducive to the control of the connectivity rate of the short-wave infrared focal plane flip welding process; and due to the high stress of the film, the reliability of the film is poor, and the subsequent heat treatment process will easily cause the surface of the film to bubble and fall off, resulting in poor reliability of the large area detector chip

Method used

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  • Preparation method of mesa type extending wavelength indium gallium arsenic detector with low stress passivation
  • Preparation method of mesa type extending wavelength indium gallium arsenic detector with low stress passivation

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Experimental program
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Embodiment 1

[0047] 1 Deposit silicon nitride etching mask, used as an etching mask, using plasma enhanced chemical vapor deposition (PECVD) technology to deposit silicon nitride with a thickness of 400±20nm, RF power of 40±5W, substrate Bottom temperature 330±5℃, gas flow SiH 4 :N 2is 1:18;

[0048] 2 Etching the mesa is divided into two parts: etching silicon nitride and etching InGaAs epitaxial material to form the mesa. Silicon nitride is etched using inductively coupled plasma (ICP) etching technology. The etching conditions are: ICP power is 2000±5W, RF power is 40±5W, and SF is used. 6 As an etching gas; use inductively coupled plasma (ICP) etching technology to etch the mesa, the etching conditions are: ICP power is 350±5W, RF power is 130±5W, using Cl 2 and N 2 as an etching gas;

[0049] 3 Remove the silicon nitride mask, use hydrofluoric acid buffer solution to etch at room temperature for 120±5s, and the volume ratio of the etching solution is HF:NH 4 F:H 2 O is 3:6:10; ...

Embodiment 2

[0058] 1 Deposit silicon nitride etching mask, used as an etching mask, using plasma enhanced chemical vapor deposition (PECVD) technology to deposit silicon nitride with a thickness of 400±20nm, RF power of 40±5W, substrate Bottom temperature 330±5℃, gas flow SiH 4 :N 2 is 1:18;

[0059] 2 Etching the mesa is divided into two parts: etching silicon nitride and etching InGaAs epitaxial material to form the mesa. Silicon nitride is etched using inductively coupled plasma (ICP) etching technology. The etching conditions are: ICP power is 2000±5W, RF power is 40±5W, and SF is used. 6 As an etching gas; use inductively coupled plasma (ICP) etching technology to etch the mesa, the etching conditions are: ICP power is 350±5W, RF power is 130±5W, using Cl 2 and N 2 as an etching gas;

[0060] 3 Remove the silicon nitride mask, use hydrofluoric acid buffer solution to etch at room temperature for 120±5s, and the volume ratio of the etching solution is HF:NH 4 F:H 2 O is 3:6:10;...

Embodiment 3

[0069] 1 Deposit silicon nitride etching mask, used as an etching mask, using plasma enhanced chemical vapor deposition (PECVD) technology to deposit silicon nitride with a thickness of 400±20nm, RF power of 40±5W, substrate Bottom temperature 330±5℃, gas flow SiH 4 :N 2 is 1:18;

[0070] 2 Etching the mesa is divided into two parts: etching silicon nitride and etching InGaAs epitaxial material to form the mesa. Silicon nitride is etched using inductively coupled plasma (ICP) etching technology. The etching conditions are: ICP power is 2000±5W, RF power is 40±5W, and SF is used. 6 As an etching gas; use inductively coupled plasma (ICP) etching technology to etch the mesa, the etching conditions are: ICP power is 350±5W, RF power is 130±5W, using Cl 2 and N 2 as an etching gas;

[0071] 3 Remove the silicon nitride mask, use hydrofluoric acid buffer solution to etch at room temperature for 120±5s, and the volume ratio of the etching solution is HF:NH 4 F:H 2 O is 3:6:10;...

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Abstract

The invention discloses a preparation method of a mesa type extending wavelength indium gallium arsenic detector with low stress passivation. The mesa type extending wavelength indium gallium arsenicdetector structurally includes an N<+> type InP layer, a compositional graded N<+> type In<x>Al<1-x>As buffer layer, an In<x>Ga<1-x>As absorbed layer, a P<+> type In<x>Al<1-x>As cap layer, a silicon nitride SiN<x> passivation film, a P electrode and a thickened electrode which are successively grown on a semi-insulated InP substrate. The passivation film is a low stress silicon nitride passivationfilm grown by an inductively coupled plasma chemical vapor deposition technique. The preparation method of the mesa type extending wavelength indium gallium arsenic detector with low stress passivation has the advantages that the low stress silicon nitride film is used for passivation, the warping degree of a large area array detector chip is controlled to be less than 10[mu]m, a focal plane device with the low blind pixel rate is realized advantageously, the low stress silicon nitride passivation film has high reliability, and the passivation effects of the surface and the side face of the low stress silicon nitride passivation film are good.

Description

technical field [0001] The invention relates to the preparation technology of infrared detectors, in particular to a preparation method of low-stress passivated mesa-type extended-wavelength indium gallium arsenic detectors, which is suitable for preparing large arrays, small pixels, high aspect ratios, and high sensitivity , High reliability mesa InGaAs detector. Background technique [0002] The short-wave infrared InGaAs detector has excellent performances such as high detection rate, high quantum efficiency, and near-room temperature operation. With the increase of indium composition, the cut-off wavelength of the extended-wavelength InGaAs detector can be extended from 1.7 μm to 2.5 μm. It has wide application value in environmental monitoring, spectroscopy, night vision, etc. With the demand for high-resolution development of short-wave infrared imaging technology, extended-wavelength InGaAs focal plane detectors are developing in the direction of large-scale, small p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/105C23C16/513C23C16/34
CPCY02P70/50
Inventor 万露红邵秀梅李雪邓双燕曹高奇程吉凤
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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