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Preparation method of ZnO modified WO3/BiVO4 heterojunction as well as application of ZnO modified WO3/BiVO4 heterojunction to photoelectrocatalysis

A heterojunction, composite light technology, applied in physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, etc., can solve the problem of short lifetime of photogenerated carriers and weak visible light response , low photon absorption coefficient, etc., to achieve the effects of improving photoelectric catalytic performance, accurate and controllable deposition thickness, and simple and controllable process

Active Publication Date: 2019-05-21
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, WO 3 Has relatively weak visible light response (<460nm), low absorption coefficient for photons
BiVO 4 The short lifetime and easy recombination of photogenerated carriers limit their application in the field of photoelectrocatalysis.

Method used

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  • Preparation method of ZnO modified WO3/BiVO4 heterojunction as well as application of ZnO modified WO3/BiVO4 heterojunction to photoelectrocatalysis
  • Preparation method of ZnO modified WO3/BiVO4 heterojunction as well as application of ZnO modified WO3/BiVO4 heterojunction to photoelectrocatalysis
  • Preparation method of ZnO modified WO3/BiVO4 heterojunction as well as application of ZnO modified WO3/BiVO4 heterojunction to photoelectrocatalysis

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Weigh 0.1g PVP and 2g WCl respectively 6 Dissolved in 10 mL DMF, and stirred at room temperature for 1 hour to obtain a spin coating solution. Take 20μL spin-coated on the conductive surface of FTO glass at a speed of 4000 rpm, dry at 80°C for 3 hours, and anneal in a muffle furnace at 500°C for 1 hour to form WO 3 Seed layer. figure 1 For the obtained WO 3 The scanning electron microscope (SEM) picture of the seed layer, it can be seen that it is composed of extremely small WO 3 It is composed of particles and densely covers the conductive surface of FTO.

[0047] 0.25g Na 2 WO 4 Dissolve in 30mL of water, add 6mL of 3M HCl, stir evenly, then add 0.2g (NH 4 ) 2 C 2 O 4 , Add water to 70mL and stir until a clear solution is formed. Take 28mL of the above-prepared solution, add and place WO 3 In the FTO reactor of the seed layer, react at 120°C for 12 hours. After the reaction is finished and cooled, the electrode surface is cleaned with deionized water and ethanol, and the...

Embodiment 2

[0052] The only difference from Embodiment 1 is that the deposition cycle of the ZnO layer is 30 times. The other processes are the same as Embodiment 1, and will not be repeated here. The cross-sectional scanning electron microscope (SEM) of the prepared photoelectrocatalytic anode material is as Picture 10 As shown, the surface morphology has not changed significantly, indicating that the ZnO layer is extremely thin.

Embodiment 3

[0054] The only difference from Embodiment 1 is that the deposition cycle of the ZnO layer is 100 times. The other processes are the same as Embodiment 1, and will not be repeated here. The cross-sectional scanning electron microscope (SEM) of the prepared photoelectrocatalytic anode material is as Picture 11 As shown, the surface morphology has not changed significantly.

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Abstract

The invention relates to a preparation method of a ZnO modified WO3 / BiVO4 heterojunction and belongs to the technical field of material preparation. The preparation method of the ZnO modified WO3 / BiVO4 heterojunction comprises the following steps: preparing a WO3 seed crystal layer from WCl6 and PVP; dissolving sodium tungstate into water and adding hydrochloric acid and ammonium oxalate sequentially to obtain a transparent solution; adding the transparent solution into the WO3 seed crystal layer, performing reaction to obtain a WO3 array precursor and performing high-temperature annealing toobtain a WO3 electrode; dissolving bi(acetylacetone)vanadium oxide and bismuth nitrate pentahydrate into glacial acetic acid, and adding ethyl cellulose to obtain a BiVO4 precursor solution; dispensing the surface of the WO3 electrode with the BiVO4 precursor solution, drying and annealing to obtain a WO3 / BiVO4 composite photo-anode; and placing the WO3 / BiVO4 composite photo-anode in an atomic layer deposition system, performing sedimentary cycle on diethyl zinc and water and allowing ZnO to grow layer by layer to obtain the ZnO modified WO3 / BiVO4 heterojunction with relatively high efficiencyand stability in photoelectrocatalysis.

Description

Technical field [0001] The invention relates to a ZnO modified WO 3 / BiVO 4 Preparation method of heterojunction and prepared ZnO modified WO 3 / BiVO 4 The application of heterojunction in photoelectric catalysis belongs to the field of material preparation technology. Background technique [0002] Energy is the basis for human survival and development. With the rapid economic development, fossil energy consumption continues to increase, and mankind is facing increasingly serious energy shortages and environmental damage. Based on this, the development of clean energy is of great significance for ensuring energy security, promoting environmental protection, reducing greenhouse gas emissions, and achieving sustainable development of the national economy. Hydrogen energy is considered to be an ideal energy carrier because of its clean, renewable, extensive resources, and high energy density. And semiconductor materials can convert solar energy into chemical energy through photoele...

Claims

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Application Information

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IPC IPC(8): C25B11/06C25B1/04B01J23/31C23C16/40C23C16/455
CPCY02E60/36
Inventor 侯慧林马自在杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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