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Laser processing method for improving TCO thin film comprehensive optical and electrical properties

A laser processing method and technology of optoelectronic characteristics, applied in the direction of copying/marking method, circuit, electrical components, etc., can solve the problems of conductivity damage, difficult to control corrosion speed and thickness, high sensitivity, improve conductivity and facilitate promotion , a wide range of effects

Active Publication Date: 2019-06-14
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a mixed transparent conductive film with an AZO / AgNW / AZO sandwich structure was fabricated on a flexible substrate PET; by controlling the number of spin-coated silver nanoparticle solutions, a layer of silver nanowires was prepared on the film, which improved the conductivity of the film. rate, and the light transmittance reaches 80%, but the film obtained by this method has a high haze, and the cost is high, the process is complicated, and it is difficult to control on the micro-nano scale
There is also a method of dilute hydrochloric acid etching to modify the conductive film. Although its optical properties are improved, the conductivity of the film is destroyed because of the direct corrosion of the film, and it is difficult to control its corrosion rate and corrosion rate in this chemical etching method. thickness, high sensitivity

Method used

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  • Laser processing method for improving TCO thin film comprehensive optical and electrical properties
  • Laser processing method for improving TCO thin film comprehensive optical and electrical properties
  • Laser processing method for improving TCO thin film comprehensive optical and electrical properties

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] In this embodiment, the metal material is selected as silver (Ag), and the TCO film is selected as an aluminum-doped zinc oxide (AZO) film, and the photoelectric performance is improved by doping Ag particles on the surface of the AZO film;

[0031] Step 1, the metal Ag to be doped is deposited on the surface of the transfer substrate 2 by vacuum magnetron sputtering. At this time, the metal Ag exists in the form of a film and serves as the source film 1, and the thickness of the film is controlled to 50nm by controlling the sputtering time , the quality of the source film formed in this way is better, and its size is 20×20mm. The source film 1 and the transfer substrate 2 are collectively referred to as the transfer substrate 5;

[0032] Step 2, select AZO to be prepared on the receiving substrate 4, wash it, dry it and use it as the receiving substrate 6; the size of the AZO glass is 15×15×2mm, the transmittance of visible light is 80%, and the square resistance is 9.5...

Embodiment 2

[0041] Silver (Ag) is selected as the metal material, and fluorine-doped tin dioxide (FTO) film is selected as the TCO film, and the photoelectric performance is improved by doping Ag particles on the surface of the FTO film;

[0042] Step 1, the metal Ag to be doped is deposited on the surface of the transfer substrate 2 by vacuum magnetron sputtering. At this time, the metal Ag exists in the form of a film and serves as the source film 1, and the thickness of the film is controlled to 30nm by controlling the sputtering time , the quality of the source film formed in this way is better, and its size is 20×15 mm. The source film 1 and the transfer substrate 2 are collectively referred to as the transfer substrate 5;

[0043] Step 2, select the FTO film to be prepared on the receiving substrate 4, wash it, dry it for standby, and use it as the receiving substrate 6; the size of the FTO film glass is 10×10×1mm, the visible light transmittance is 78.02%, and the square resistance ...

Embodiment 3

[0053] Silver (Ag) is selected as the metal material, aluminum-doped zinc oxide (AZO) film is selected as the TCO film, and the photoelectric performance is improved by doping Ag particles on the surface of the AZO film.

[0054] Step 1, the metal Ag to be doped is deposited on the surface of the transfer substrate 2 by vacuum magnetron sputtering. At this time, the metal Ag exists in the form of a film and serves as the source film 1, and the thickness of the film is controlled to be 100nm by controlling the sputtering time , the quality of the source film formed in this way is better, and its size is 20×20mm. The source film 1 and the transfer substrate 2 are collectively referred to as the transfer substrate 5;

[0055] Step 2, select the AZO film to be prepared on the receiving substrate 4, wash it, dry it and use it as the receiving substrate 6; the size of the AZO glass is 15×15×2mm, the transmittance of visible light is 79.46%, and the square resistance is 9.39Ω / sq, th...

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Abstract

The invention belongs to the field of transparent conductive oxide thin films, and relates to a laser processing method for improving TCO thin film comprehensive optical and electrical properties. Thelaser processing method for improving the TCO thin film comprehensive optical and electrical properties comprises the steps that required doped metal or an alloy thin film is used as a source thin film to be fixed to a transparent base and used as a transferred base piece; meanwhile, a TCO thin film is fixed to a transparent glass base and used as a received base piece; the transferred base pieceis placed at the position of 0-350 [mu]m above the received base piece, thin film surfaces are placed oppositely, and it is ensured that the transferred base piece can completely cover the received base piece; and a picoseconds laser beam acts on the source thin film through a transferred base plate, the source thin film is heated to a fusing or plasma state, the source thin film is separated from the base plate and transferred to the received base piece, and metal particles are deposited on the TCO film surface. According to the laser processing method for improving the TCO thin film comprehensive optical and electrical properties, morphology damage caused by direct laser processing operation on the TCO thin film is effectively avoided, the working procedure is simple, the controllability is high, implementation is easy, and the laser processing method for improving the TCO thin film comprehensive optical and electrical properties is equally applied to the micro-nano machining field.

Description

technical field [0001] The invention belongs to the field of transparent conductive oxide thin films, and in particular relates to a laser processing method for improving the comprehensive photoelectric characteristics of TCO thin films. Background technique [0002] Transparent conductive oxide (TCO) film is a kind of transparent conductive film. It has the characteristics of high absorption in the ultraviolet region, high transmission in the visible region, high reflection in the infrared region, and high conductivity. It is widely used in various fields of contemporary science and technology, and it is the material foundation of emerging fields such as microelectronic materials, optoelectronic materials, sensors, and solar cells. At present, people study it most systematically and deeply. TCO thin film materials that are currently researched and applied mainly include: tin-doped indium oxide (ITO) film, aluminum-doped zinc oxide (AZO) film, and fluorine-doped tin dioxide ...

Claims

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Application Information

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IPC IPC(8): B41M5/00H01B13/00C23C14/35C23C14/18C23C14/28
Inventor 许孝芳李精博杨晓寒潘森高永锋
Owner JIANGSU UNIV
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