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A stable and efficient perovskite semiconductor thin film solar cell and its preparation method

A solar cell and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problem that the oxidation defects of perovskite films have no obvious effect, overcome the lack of stability and promote hole transport. , the preparation method is simple

Active Publication Date: 2021-07-20
南京奥联光能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the modification of perovskite surface is by spin-coating a layer of dense single-walled carbon nanotube structure or N,N,N',N'-tetraphenyl-p-aminobiphenyl (TPB) on the surface of the device. parameter, to increase the service life of the device in a high humidity environment, but has no significant effect on the oxidation defects of the perovskite film

Method used

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  • A stable and efficient perovskite semiconductor thin film solar cell and its preparation method
  • A stable and efficient perovskite semiconductor thin film solar cell and its preparation method
  • A stable and efficient perovskite semiconductor thin film solar cell and its preparation method

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Embodiment 1

[0036] The preparation of a perovskite semiconductor thin-film solar cell surface-modified with an organic phosphide specifically includes the following steps:

[0037] (1) Substrate pretreatment: Divide the FTO conductive glass into 10cm×10cm, ultrasonically clean it with detergent, deionized water, and ethanol three times, each time for 20 minutes, and finally dry it with nitrogen for use;

[0038] (2) Preparation of the hole transport layer: dissolving stannous chloride, urea, mercaptoacetic acid and concentrated hydrochloric acid in 400 ml of deionized water to form a tin oxide mother liquor of 12 millimoles per liter, and taking 30 milliliters of the mother liquor after two days in refrigeration Dilute it six times, use the soaking method, put the FTO conductive glass in the diluent, let it stand at 80°C for 5 hours, wash it with pure water, then dry it with nitrogen, and heat it from room temperature to 180°C in the last 30 minutes and keep it warm for two hours. The hol...

Embodiment 2

[0044] The preparation of a perovskite semiconductor thin-film solar cell surface-modified with an organic phosphide specifically includes the following steps:

[0045] (1) Substrate pretreatment: Divide the FTO conductive glass into 10cm×10cm, ultrasonically clean it with detergent, deionized water, and ethanol three times, each time for 20 minutes, and finally dry it with nitrogen for use;

[0046] (2) Preparation of the hole transport layer: dissolving stannous chloride, urea, mercaptoacetic acid and concentrated hydrochloric acid in 400 ml of deionized water to form a tin oxide mother liquor of 12 millimoles per liter, and taking 30 milliliters of the mother liquor after two days in refrigeration Dilute it six times, use the soaking method, put the FTO conductive glass in the diluent, let it stand at 80°C for 5 hours, then wash it with pure water, then blow it dry with nitrogen, and heat it from room temperature to 180°C within 30 minutes. The hole transport layer was prep...

Embodiment 3

[0052] The preparation of a perovskite semiconductor thin-film solar cell surface-modified with an organic phosphide specifically includes the following steps:

[0053] (1) Substrate pretreatment: Divide the FTO conductive glass into 10cm×10cm, ultrasonically clean it with detergent, deionized water, and ethanol three times, each time for 20 minutes, and finally dry it with nitrogen for use;

[0054] (2) Preparation of the hole transport layer: dissolving stannous chloride, urea, mercaptoacetic acid and concentrated hydrochloric acid in 400 ml of deionized water to form a tin oxide mother liquor of 12 millimoles per liter, and taking 30 milliliters of the mother liquor after two days in refrigeration Dilute it six times, use the soaking method, put the FTO conductive glass in the diluent, let it stand at 80°C for 5 hours, wash it with pure water, then dry it with nitrogen, and heat it from room temperature to 180°C in the last 30 minutes and keep it warm for two hours. The hol...

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Abstract

The invention relates to a stable and high-efficiency perovskite semiconductor thin-film solar cell and a preparation method thereof. The solar cell includes a perovskite absorbing layer surface-modified with an organic phosphide; The perovskite absorbing layer is a composite layer obtained by mixing perovskite materials and organic phosphide, or a perovskite semiconductor film layer and an organic phosphide absorbing layer covered on the surface, or a perovskite material and organic phosphide The composite layer obtained by mixing the compounds into one body and the organic phosphorous compound absorbing layer covered on the surface. The open-circuit voltage and battery efficiency of the perovskite semiconductor thin film solar cell prepared by the invention are obviously improved, and the device stability is improved.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and in particular relates to a stable and efficient perovskite semiconductor thin-film solar cell and a preparation method thereof. Background technique [0002] Perovskite ABX 3 In the structure, A is methylamino CH 3 NH 3 , B is metal lead, tin and other atoms, X represents chlorine, bromine, iodine and other halogen atoms. This type of material mainly has the following advantages: (1) Due to the high charge carrier mobility and good light absorption performance of the inorganic components, the energy loss in the photoelectric conversion process is extremely low, so its theoretical conversion efficiency can reach up to 50 %, it is expected to greatly reduce the cost of solar cells; (2) the synthesis process is simple and cheap, and is more suitable for industrial production; (3) the crystallinity is good under low temperature conditions, which is conducive to carrier diffusion;...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCY02E10/549
Inventor 钟杰张苗刘子文吴思佳黄福志程一兵
Owner 南京奥联光能科技有限公司
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