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Three-dimensional molecular-based ferroelectric memory device

A ferroelectric memory, ferroelectric storage technology, applied in electric solid devices, electrical components, semiconductor devices, etc., can solve problems such as application limitations, few crystals in polar axes, and difficulty in fabrication, and achieve low power consumption, mild reaction conditions, High reliability effect

Inactive Publication Date: 2019-07-23
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional ferroelectric materials have few polar axes, inherent disadvantages of crystals, making it difficult to manufacture, and their applications are limited to a certain extent.

Method used

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  • Three-dimensional molecular-based ferroelectric memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A molecular-based ferroelectric storage material having the general formula: A x B y C z

[0041] in

[0042] A is a small molecule organic cation containing nitrogen, phosphine or fluorine, including: tetramethylamine cation, tetramethylphosphine cation, trimethylchloromethylamine cation, trimethylfluoromethylamine cation, trimethylbromomethyl amine cation, trimethyliodomethylamine cation, trimethyldifluoromethylamine cation, trimethyltrifluoromethylamine cation, trimethylhydroxylamine cation, trimethylethyl cation, trimethylpropane cation, trimethylchloroethyl cation, trimethylamine cation, triethylamine cation, tetraethylamine cation, triethylamine methyl cation, triethylamine chloromethyl cation, triethylamine fluoromethyl cation, triethylamine cation Aminobromomethyl cation, triethylammonioiodomethyl cation, pyrrolidinium cation, pyrroline cation, quinucidine cation, imidazolium cation, pyridinium cation, aminopyrrolidine cation, aminoquinucidine cation, pipera...

Embodiment 2

[0046] A molecular-based ferroelectric storage material having the general formula: A x B y C z ; A=AP, B=Rb, when C=Br, its general formula is APRbBr 3 , where AP is [C 4 h 12 N 2 ] 2+ .

[0047] The preparation method of the above-mentioned molecular-based ferroelectric storage material comprises the following steps: mixing A organic molecule or AC organic salt with BC metal salt in water, DMF, hydrochloric acid or hydrobromic acid solvent according to the stoichiometric ratio to obtain a clear solution, through The solvent was removed by slow evaporation and vacuum distillation to obtain the product.

[0048] figure 2 for (AP)RbBr 3 The relationship between the dielectric constant of the sample and the temperature;

[0049] image 3 for (AP)RbBr 3 The hysteresis loop diagram of the sample;

[0050] Figure 4 for (AP)RbBr 3 24 possible equivalent polarization directions for the ferroelectric phase;

[0051] Compared with unipolar ferroelectrics, the more pol...

Embodiment 3

[0053] A method for preparing a molecular-based ferroelectric memory crystal thin film, the specific steps are as follows:

[0054] 1) Dissolve in organic solvents such as water, methanol, DMF, ethanol, acetone, petroleum ether, ether, chloroform, ethylene glycol, propanol, butanol, DMSO, acetonitrile, aniline, ethylenediamine, THF, toluene, etc. For the molecular-based ferroelectric storage material in the above-mentioned embodiment 1, a precursor liquid is prepared;

[0055] 2) Take the precursor solution, and use the drop coating method or the spin coating method to evenly cover the surface of the above substrate;

[0056] 3) Remove the solvent by evaporating at room temperature or heating and annealing to obtain A x B y C z film;

[0057] 4) The substrate is removed by a chemical method or a physical method to obtain a molecular-based ferroelectric memory crystal thin film.

[0058] The molecular-based ferroelectric memory crystal thin film is a polycrystalline thin f...

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Abstract

The invention belongs to the technical field of micro-electronic memorizers and especially relates to a three-dimensional molecular-based ferroelectric memory device which comprises a molecular-basedferroelectric memory crystal film, a central electrode, a surrounding electrode and an insulating layer, wherein a metal column is wrapped by the molecular-based ferroelectric memory crystal film, themetal column serves as the central electrode, the surrounding electrode is metal which is deposited to the molecular-based ferroelectric memory crystal film in a liquid phase or gas phase mode, and the surrounding electrode is embedded into the insulating layer. According to a molecular-based ferroelectric memery material of the three-dimensional molecular-based ferroelectric memory device, a general formula of the molecular-based ferroelectric memory material is AxByCz, wherein the A is a micromolecular organic positive ion containing nitrogen, phosphine or fluorine, the B is a metal positive ion, and the C is a negative ion. The memory device is of a three-dimensional structure design, so that the memory density is high; the piling layers can be changed according to requirements to achieve different memory capacities; meanwhile, the memory device has the advantages of low power consumption, high performance, high reliability and low-temperature preparation.

Description

technical field [0001] The invention belongs to the technical field of microelectronic memory, in particular to a three-dimensional molecular-based ferroelectric memory device. Background technique [0002] Memory is an important part of the computer architecture, which has a decisive impact on the speed, integration and power consumption of the computer. The current mainstream cache and main memory, such as SRAM and DRAM, because the leakage current of CMOS increases with the reduction of process size, the static power consumption is increasing day by day. Among the current non-volatile memories, Flash technology is the most mature, but Flash cannot meet the performance requirements of cache and main memory due to its shortcomings such as slow writing speed, long response time, and limited erasable times. [0003] Ferroelectric memory combines the advantages of non-volatile memory and volatile memory. It has the advantages of high speed, unlimited read and write, low power...

Claims

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Application Information

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IPC IPC(8): C07C211/07C07C209/00C07F7/24H01L27/11585H01L27/1159
CPCC07C211/07C07C209/00C07F7/24H10B51/00H10B51/30
Inventor 游雨蒙冯子杰熊昱安
Owner SOUTHEAST UNIV
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