A processing technology of oxide resistance sheet

A processing technology and resistance chip technology, applied in the field of oxide resistor chip processing technology, can solve the problems of uneven density and cracks of resistor chips, and achieve the effects of improving anti-aging ability, improving performance and slowing down compression speed.

Active Publication Date: 2021-03-05
GULIFA ELECTRIC +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a processing technology for oxide resistors, which solves the phenomenon of delamination in the process of forming zinc oxide resistors, and the density of the resistors is not uniform after forming, and there are cracks Case

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] The present invention provides a technical solution: a process for processing an oxide resistance plate, the process for processing an oxide resistance plate includes the steps of raw material preparation, raw material preparation, mixing, granulation, water content, forming, sintering, heat treatment, and electrical performance measurement;

[0028] S1, raw material preparation: take 94.7% mol zinc oxide, 0.7% mol bismuth oxide, 1.0% mol cobalt oxide, 0.5% mol manganese oxide, 1.0% mol antimony oxide, 1.0% mol chromium oxide, 0.5% mol nickel oxide, 0. %5mol silicon oxide and 0.1%mol boric acid are accurately weighed and checked to ensure that the formula ratio is accurate;

[0029] S2. Raw material preparation: Pour the additives with accurate proportio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a process for processing an oxide resistor. The process for processing an oxide resistor includes the steps of raw material preparation, raw material preparation, mixing, granulation, water content, forming, sintering, heat treatment, and electrical performance measurement; S1. Raw material preparation: Take 94.7% mol zinc oxide, 0.7% mol bismuth oxide, 1.0% mol cobalt oxide, 0.5% mol manganese oxide, 1.0% mol antimony oxide, 1.0% mol chromium oxide, 0.5% mol nickel oxide, 0.% 5mol silicon oxide and 0.1% mol boric acid. The oxide resistor chip processing technology crushes the material into nanometer shape, improves the uniformity of the mixture, so as to facilitate the combination of raw materials, and increases the moisture content of the material by adding water, so as to avoid dry cracking and damage during the sintering process. The method of dry pressing is used to control the amount of compression of the molding powder in the mold sleeve and slow down the compression speed.

Description

technical field [0001] The invention relates to the technical field of electronic component processing, in particular to a processing technology for an oxide resistance chip. Background technique [0002] Zinc oxide resistors are the core devices of metal oxide voltage limiters in power systems. In order to adapt to the development of high-performance MOVs towards ultra-high voltage, miniaturization, and direct current transmission, zinc oxide resistors are developed to high potential gradients, through The high-performance high-potential gradient with large current capacity, low residual voltage ratio, and excellent aging performance is developed. High-gradient and large-capacity zinc oxide resistors are used to reduce the height and weight of the arrester core, thereby reducing the weight and weight of the entire arrester. Promote the rapid development of the entire power industry. It can be seen from this that it is an important way to improve the safety, reliability, li...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01C17/00H01C17/06H01C17/30C04B35/453C04B35/622
CPCC04B35/453C04B35/622C04B2235/3241C04B2235/3262C04B2235/3275C04B2235/3279C04B2235/3294C04B2235/3298C04B2235/3409C04B2235/3418H01C17/006H01C17/06H01C17/30
Inventor 郑巨谦周义陈团结
Owner GULIFA ELECTRIC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products