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Preparation method of protonated carbon nitride-beta-SiC composite material

A technology of carbon nitride and composite materials, which is applied in chemical instruments and methods, special compound water treatment, physical/chemical process catalysts, etc., and can solve the problem of not effectively developing the photocatalytic performance of pure crystalline phase β-SiC composite materials. , to achieve the effect of promoting migration rate, high catalytic performance, and inhibiting reorganization

Inactive Publication Date: 2019-09-06
宁夏然尔特工业产业研究院(有限公司)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the SiC used is a commercially purchased micron-sized powder, and its crystal form is a mixed phase of α-SiC and β-SiC, the preparation and utilization of nano-scale pure crystal phase β-SiC composite materials have not been effectively developed and utilized. Photocatalytic performance, and nanometerization is one of the important ways to improve the specific surface area of ​​photocatalysts, control the morphology, adjust the electronic properties and modify the surface functionalization. In view of this, the development of nanoscale pure crystal phase β-SiC composite materials The preparation method and its photocatalytic performance still have potential application value

Method used

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  • Preparation method of protonated carbon nitride-beta-SiC composite material
  • Preparation method of protonated carbon nitride-beta-SiC composite material
  • Preparation method of protonated carbon nitride-beta-SiC composite material

Examples

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Effect test

Embodiment 1

[0027] A preparation method of protonated carbon nitride-β-SiC composite material, comprising the following steps:

[0028] (1) Preparation of g-C 3 N 4 / β-SiC; put melamine and β-SiC into a flask filled with methanol, stir and mix evenly at room temperature, distill and recover methanol to obtain a powder sample; heat the powder sample to obtain g-C 3 N 4 / β-SiC;

[0029] (2) put g-C 3 N 4 / β-SiC was added to concentrated hydrochloric acid, stirred at room temperature, after the stirring was completed, suction filtered and washed, and dried to obtain protonated carbon nitride-β-SiC.

Embodiment 2

[0031] A preparation method of protonated carbon nitride-β-SiC composite material, comprising the following steps:

[0032] Preparation of β-SiC: Dissolve sodium silicate and ferric nitrate with a molar ratio of 10:1 in a small amount of deionized water, add Taixi coal with an ash content of 0.1%, and the amount of Taixi coal added is the same as the mole of sodium silicate The ratio is 5:1, and the reaction is carried out with stirring at a temperature of 90°C; until the reactant becomes viscous and forms a gel, then dried and pulverized to obtain a silicon carbide precursor; put the silicon carbide precursor into a high-temperature tube In the furnace, under argon atmosphere, the temperature was raised to 1000°C at a rate of 3°C / min, and then raised to 1450°C at a rate of 2°C / min, kept for 5 hours, and then cooled to room temperature at a rate of 3°C / min. A crude silicon carbide product was obtained.

[0033] The crude silicon carbide product was roasted in a muffle furnace...

Embodiment 3

[0038] A preparation method of protonated carbon nitride-β-SiC composite material, comprising the following steps:

[0039] Preparation of β-SiC: Dissolve sodium silicate and ferric nitrate with a molar ratio of 10:1 in a small amount of deionized water, add Taixi coal with an ash content of 0.2%, and the amount of Taixi coal added is the same as the mole of sodium silicate The ratio is 5:1, and the reaction is carried out with stirring at a temperature of 90°C; until the reactant becomes viscous and forms a gel, then dried and pulverized to obtain a silicon carbide precursor; put the silicon carbide precursor into a high-temperature tube In the furnace, under argon atmosphere, the temperature was raised to 1000°C at a rate of 3°C / min, and then raised to 1450°C at a rate of 2°C / min, kept for 5 hours, and then cooled to room temperature at a rate of 3°C / min. A crude silicon carbide product was obtained.

[0040] The crude silicon carbide product was roasted in a muffle furnace...

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Abstract

The invention discloses a preparation method of a protonated carbon nitride-beta-SiC composite material, and the method comprises the following steps: preparing g-C3N4 / beta-SiC, namely placing melamine and beta-SiC in a flask containing methanol, stirring and mixing at room temperature, recovering the methanol by distillation to obtain a powder sample, and heating the powder sample to obtain the g-C3N4 / beta-SiC; adding the g-C3N4 / beta-SiC into concentrated hydrochloric acid, stirring at room temperature, filtering and washing after stirring, and drying to obtain the protonated carbon nitride-beta-SiC composite material. The method has the beneficial effects that: the nano-level beta-SiC is used as one of doping raw materials to successfully prepare the protonated carbon nitride-beta-SiC (protonated g-C3N4 / beta-SiC)composite material, the material has larger specific surface area, uniform and loose morphology structure and excellent heterostructure fabrication, can effectively inhibit recombination of photoelectron / hole pairs, enables the band gap of the composite material to be moderately widened, thereby promoting the migration rate of photogenerated carriers and effectively improving the photocatalytic activity of the material.

Description

technical field [0001] The invention relates to the technical field of compound synthesis, in particular to a method for preparing a protonated carbon nitride-β-SiC composite material. Background technique [0002] The development of semiconductor materials is considered to be one of the effective ways to produce renewable energy and reduce environmental pollution. Over the years, the development of semiconductor photocatalysts with excellent performance, low cost and efficient use of solar energy has been the research frontier of people's attention. where g-C 3 N 4 Due to their good visible light response properties, good thermal stability, simple preparation and direct utilization of solar energy, they have attracted widespread attention. However g-C 3 N 4 The small specific surface area, narrow visible light response range, and easy recombination of photogenerated electron-hole pairs restrict its further application. For this reason, people have developed a variety o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J35/10C02F1/30C02F101/38
CPCB01J27/24C02F1/30C02F2305/10C02F2101/308C02F2101/40B01J35/61B01J35/39
Inventor 刘万毅吴志强段斌闵越贾小东张娜
Owner 宁夏然尔特工业产业研究院(有限公司)
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